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US5481124A
Expired / Lapsed
US
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Laminated solid-state image pickup device
Assignee: Canon Inc
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Filing: 1994-08-10
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Granted: 1996-01-02
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Expires: 2014-08-10
Abstract
Abstract Compatibility of high sensitivity with low remaining images, and low crosstalk can be achieved by a laminated solid-state image pickup device, which includes accumulating portions for accumulating electric signals, reading units for reading the electric signals, connecting members formed in contact with the accumulating portions, and a photoconductive film, and by a method for manufacturing the device. The photoconductive film is made of a non-crystalline semiconductor, and is configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type. Each of the connecting members is made of a semiconductor layer of a first conduction type, intrinsic or having a low impurity density, surrounded by a semiconductor layer of the second conduction type or a conductive material.
Inventors
- 👤 Hiraku Kozuka
- 👤 Shigetoshi Sugawa
- 👤 Hisae Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:58
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/194; H10F39/197
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
130 words
A laminated solid-state image pickup device comprising: a semiconductor circuit substrate, comprising accumulating portions for accumulating electric signals, and reading means for reading the electric signals; an insulating layer formed on said semiconductor circuit substrate except at at least parts of said accumulating portions; connecting members formed in contact with said accumulating portions; and a photoconductive film laminated on said insulating layer and said connecting members, wherein said photoconductive film comprises a non-crystalline semiconductor configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type, and wherein each of said connecting members comprises a first semiconductor region of a first conduction type, instrinsic or having a low impurity density, surrounded by a second semiconductor region of the second conduction type.
Claim 2
Dependent Claim
130 words
A laminated solid-state image pickup device comprising: a semiconductor circuit substrate, comprising accumulating portions for accumulating electric signals, and reading means for reading the electric signals; an insulating layer formed on said semiconductor circuit substrate except at at least parts of said accumulating portions; connecting members formed in contact with said accumulating portions; and a photoconductive film laminated on said insulating layer and said connecting members, wherein said photoconductive film comprises a non-crystalline semiconductor configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type, and wherein each of said connecting members comprises a first semiconductor region of a first conduction type, instrinsic or having a low impurity density, surrounded by a second semiconductor region of the second conduction type.
Claim 3
Dependent Claim
35 words
A device according to claim 1, wherein each of said reading means comprises a device selected from a CCD (charge-coupled device), an MOS (metal oxide semiconductor) transistor, a static induction transistor, and a bipolar transistor.
Claim 4
Dependent Claim
15 words
A device according to claim 1, wherein said accumulating portions have a first conductive type.
Claim 5
Dependent Claim
16 words
A device according to claim 1, further comprising a transparent conductive layer on said photoconductive film.
Claim 6
Dependent Claim
13 words
A device according to claim 1, wherein said non-crystalline semiconductor includes silicon atoms.
Claim 7
Dependent Claim
13 words
A device according to claim 1, wherein said connecting members include silicon atoms.
Claim 8
Dependent Claim
20 words
A device according to claim 1, wherein said first semiconductor region of the first conduction type comprises a single crystal.
Claim 9
Dependent Claim
12 words
A device according to claim 7, wherein the single crystal comprises silicon.
Claim 10
Dependent Claim
28 words
A device according to claim 1, wherein said second semiconductor region of the second conduction type is connected to a channel stopper formed in said semiconductor circuit substrate.
Claim 11
Dependent Claim
33 words
A device according to claim 1, wherein said second semiconductor region of the second conduction type is connected to another semiconductor region of the same conduction type formed in said semiconductor circuit substrate.
Claim 12
Dependent Claim
17 words
A device according to claim 1, wherein said carrier multiplication layer multiplies carriers by an avalanche effect.
Claim 13
Dependent Claim
17 words
A device according to claim 1, wherein said carrier multiplication layer has at least one step-back structure.
Claim 14
Dependent Claim
30 words
A device according to claim 1, wherein said carrier multiplication layer comprises at least one layer having a mininum band gap of Eg2 and a maximum band gap of Eg3.
Claim 15
Dependent Claim
19 words
A device according to claim 13, wherein the band gap of the layer continuously changes from Eg2 to Eg3.
Claim 16
Dependent Claim
23 words
A device according to claim 13, wherein the energy difference between Eg3 and Eg2 is equal to or greater than the ionization energy.
Claim 17
Dependent Claim
58 words
A device according to claim 1, wherein said carrier multiplication layer comprises a plurality of layers, each having the minimum band gap Eg2 and the maximum band gap Eg3, and wherein the side of the minimum band gap Eg2 of at least one of the plurality of layers contacts the maximum band gap Eg3 of the adjacent layer.
Claim 18
Dependent Claim
23 words
A device according to claim 1, wherein said non-crystalline semiconductor comprises one of an amorphous semiconductor, a microcrystalline semiconductor and a polycrystalline semiconductor.
Claim 19
Dependent Claim
30 words
A device according to claim 12, wherein the thickness of a layer for forming the step-back structure is at least 50 Å and equal to or less than 1 μm.
Claim 20
Dependent Claim
25 words
A device according to claim 1, wherein said light absorbing layer is provided at a side closer to incident light than said carrier multiplication layer.
Claim 21
Dependent Claim
20 words
A device according to claim 1, wherein said connecting member is provided on the entire surfaces of said accumulating portions.
Claim 22
Dependent Claim
124 words
A laminated solid-state image pickup device comprising: a semiconductor circuit substrate, comprising accumulating portions for accumulating electric signals, and reading means for reading the electric signals; an insulating layer formed on said semiconductor circuit substrate except at at least parts of said accumulating portions; connecting members formed in contact with said accumulating portions; and a photoconductive film laminated on said insulating layer and said connecting members, wherein said photoconductive film comprises a non-crystalline semiconductor configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type, and wherein each of said connecting members comprises a first semiconductor region of a first conduction type, instrinsic or having a low impurity density, surrounded by a conductive material.
Claim 23
Dependent Claim
124 words
A laminated solid-state image pickup device comprising: a semiconductor circuit substrate, comprising accumulating portions for accumulating electric signals, and reading means for reading the electric signals; an insulating layer formed on said semiconductor circuit substrate except at at least parts of said accumulating portions; connecting members formed in contact with said accumulating portions; and a photoconductive film laminated on said insulating layer and said connecting members, wherein said photoconductive film comprises a non-crystalline semiconductor configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type, and wherein each of said connecting members comprises a first semiconductor region of a first conduction type, instrinsic or having a low impurity density, surrounded by a conductive material.
Claim 24
Dependent Claim
30 words
A device according to claim 21, wherein each of said reading means comprises a device selected from a CCD, an MOS transistor, a static induction transistor, and a bipolar transistor.
Claim 25
Dependent Claim
15 words
A device according to claim 21, wherein said accumulating portions have a first conductive type.
Claim 26
Dependent Claim
16 words
A device according to claim 21, further comprising a transparent conductive layer on said photoconductive film.
Claim 27
Dependent Claim
13 words
A device according to claim 21, wherein said non-crystalline semiconductor includes silicon atoms.
Claim 28
Dependent Claim
13 words
A device according to claim 21, wherein said connecting members include silicon atoms.
Claim 29
Dependent Claim
20 words
A device according to claim 21, wherein said first semiconductor region of the first conduction type comprises a single crystal.
Claim 30
Dependent Claim
12 words
A device according to claim 27, wherein the single crystal comprises silicon.
Claim 31
Dependent Claim
22 words
A device according to claim 21, wherein said conductive material is connected to a channel stopper formed in said semiconductor circuit substrate.
Claim 32
Dependent Claim
21 words
A device according to claim 21, wherein said conductive material is provided on said first semiconductor region via an insulating layer.
Claim 33
Dependent Claim
17 words
A device according to claim 21, wherein said carrier multiplication layer multiplies carriers by an avalanche effect.
Claim 34
Dependent Claim
17 words
A device according to claim 21, wherein said carrier multiplication layer has at least one step-back structure.
Claim 35
Dependent Claim
30 words
A device according to claim 21, wherein said carrier multiplication layer comprises at least one layer having a mininum band gap of Eg2 and a maximum band gap of Eg3.
Claim 36
Dependent Claim
19 words
A device according to claim 23, wherein the band gap of the layer continuously changes from Eg2 to Eg3.
Claim 37
Dependent Claim
23 words
A device according to claim 23, wherein the energy difference between Eg3 and Eg2 is equal to or greater than the ionization energy.
Claim 38
Dependent Claim
58 words
A device according to claim 21, wherein said carrier multiplication layer comprises a plurality of layers, each having the minimum band gap Eg2 and the maximum band gap Eg3, and wherein the side of the minimum band gap Eg2 of at least one of the plurality of layers contacts the maximum band gap Eg3 of the adjacent layer.
Claim 39
Dependent Claim
23 words
A device according to claim 21, wherein said non-crystalline semiconductor comprises one of an amorphous semiconductor, a microcrystalline semiconductor and a polycrystalline semiconductor.
Claim 40
Dependent Claim
30 words
A device according to claim 22, wherein the thickness of a layer for forming the step-back structure is at least 50 Å and equal to or less than 1 μm.
Claim 41
Dependent Claim
25 words
A device according to claim 21, wherein said light absorbing layer is provided at a side closer to incident light than said carrier multiplication layer.
Claim 42
Dependent Claim
20 words
A device according to claim 21, wherein said connecting member is provided on the entire surfaces of said accumulating portions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-01 | 1999-07-03 | 2000-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-01 | 2003-07-03 | 2004-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-01 | 2007-07-03 | 2008-01-02 | $7700.00 | Window Closed / Lapsed |