EP0437633A1
Expired / Lapsed
EP
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Photo-electric converter
Assignee: Canon Inc
•
Filing: 1990-08-03
•
Granted: —
•
Expires: 2010-08-03
Abstract
Abstract A photo-electric converter comprises a light-absorbing layer (310) which is made of a non-single crystalline material and absorbs light to generate photo carriers, and multiplier layers (301, 303, 305, 307, 309) which are made of a non-single crystalline material and multiply photo carriers generated in the light-absorbing layer. Therefore, the photo-electric converter featured by its high sensitivity, low noise, and can be manufactured to have a large area at relatively low temperatures.
Inventors
- 👤 Shigetoshi 28-4-301 Morinosato 1-Chome Sugawa
- 👤 Ihachiro B202 Howaitohairando Gofuku
- 👤 Kazuaki Ohmi
- 👤 Yoshiyuki Osada
- 👤 Masato 21-30 Kanai-Machi 1-Chome Yamanobe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 08:40
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/197; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255
Claims Analysis
Total Claims: 88
Claim 1
Independent Claim
41 words
A photoelectric conversion apparatus characterized by comprising: a light absorption layer, formed of a non-monocrystalline material, for absorbing light and generating photocarriers; and a multiplication layer, formed of a non-monocrystalline material, for multiplying the photocarriers generated by said light absorption layer.
Claim 2
Dependent Claim
24 words
A photoelectric conversion apparatus according to claim 1, wherein the non-monocrystalline material includes an amorphous material, a fine crystalline material, and/or a polycrystalline material.
Claim 3
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 1, wherein said multiplication layer is constituted by alternately stacking a layer having a large dielectric constant and a layer having a small dielectric constant.
Claim 4
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 3, wherein a ratio of the dielectric constants of said layer having the large dielectric constant and the layer having the small dielectric constant forming said multiplication layer is not less than 1.5.
Claim 5
Dependent Claim
18 words
A photoelectric conversion apparatus according to claim 1, wherein said multiplication layer has at least one stepback structure.
Claim 6
Dependent Claim
39 words
A photoelectric conversion apparatus according to claim 1, wherein said multiplication layer has at least one stepback layer in which a forbidden bandwidth is continuously changed to have a minimum forbidden bandwidth Eg2 and a maximum forbidden bandwidth Eg3.
Claim 7
Dependent Claim
35 words
A photoelectric conversion apparatus according to claim 5 or 6, wherein said multiplication layer has a plurality of stepback layers, and has a high-concentration impurity containing layer containing an impurity between the adjacent stepback layers.
Claim 8
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 1, wherein said light absorption layer has a constant forbidden bandwidth Eg1 in a direction of layer thickness thereof.
Claim 9
Dependent Claim
29 words
A photoelectric conversion apparatus according to claim 1, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in a light incidence direction.
Claim 10
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 1, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in direction opposite to a light incidence direction.
Claim 11
Dependent Claim
34 words
A photoelectric conversion apparatus according to claim 6, wherein said light absorption layer has substantially the same forbidden bandwidths Eg1 and Eg2 near an interface between said light absorption layer and said multiplication layer.
Claim 12
Dependent Claim
34 words
A photoelectric conversion apparatus according to claim 6, wherein said light absorption layer has substantially the same forbidden bandwidths Eg1 and Eg3 near an interface between said light absorption layer and said multiplication layer.
Claim 13
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 1, wherein said multiplication layer is formed on an underlying substrate on which a circuit has already been formed.
Claim 14
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 1, wherein an electrode, an electric charge injection blocking layer, said multiplication layer, said light absorption layer, an electric charge injection blocking layer, and a transparent electrode are stacked in an order named.
Claim 15
Dependent Claim
35 words
A photoelectric conversion apparatus according to claim 3, wherein a layer thickness of said layer having the large dielectric constant is not less than 1.5 times that of said layer having the small dielectric constant.
Claim 16
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 3, wherein a layer thickness of said layer having the large dielectric constant is not less than 30 Å and not more than 3,000 Å.
Claim 17
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 3, wherein a layer thickness of said layer having the small dielectric constant is not less than 20 Å and not more than 2,000 Å.
Claim 18
Dependent Claim
28 words
A photoelectric conversion apparatus according to claim 5, wherein a layer thickness of said stepback layer is not less than 50 Å and not more than 1 µm.
Claim 19
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 7, wherein a layer thickness of said high-concentration impurity layer is not more than a mean free path λ of electrons in said high-concentration impurity layer.
Claim 20
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 14, wherein a layer thickness of each of said electric charge injection blocking layers is not less than 50 Å and not more than 2,000 Å.
Claim 21
Dependent Claim
63 words
A photoelectric conversion apparatus characterized by comprising: a light absorption layer, formed of a non-monocrystalline material, for absorbing light and generating photocarriers; and a multiplication layer formed of a non-monocrystalline material, and having at least one layer region having a stepback structure in which a forbidden bandwidth is continuously changed to have a minimum forbidden bandwidth Eg2 and a maximum forbidden bandwidth Eg3.
Claim 22
Dependent Claim
24 words
A photoelectric conversion apparatus according to claim 21, wherein the non-monocrystalline material includes an amorphous material, a fine crystalline material, and/or a polycrystalline material.
Claim 23
Dependent Claim
18 words
A photoelectric conversion apparatus according to claim 21, wherein said multiplication layer has at least one stepback structure.
Claim 24
Dependent Claim
39 words
A photoelectric conversion apparatus according to claim 21, wherein said multiplication layer has at least one stepback layer in which a forbidden bandwidth is continuously changed to have a minimum forbidden bandwidth Eg2 and a maximum forbidden bandwidth Eg3.
Claim 25
Dependent Claim
35 words
A photoelectric conversion apparatus according to claim 23 or 24, wherein said multiplication layer has a plurality of stepback layers, and has a high-concentration impurity containing layer containing an impurity between the adjacent stepback layers.
Claim 26
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 21, wherein said light absorption layer has a constant forbidden bandwidth Eg1 in a direction of layer thickness thereof.
Claim 27
Dependent Claim
29 words
A photoelectric conversion apparatus according to claim 21, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in a light incidence direction.
Claim 28
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 21, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in direction opposite to a light incidence direction.
Claim 29
Dependent Claim
34 words
A photoelectric conversion apparatus according to claim 24, wherein said light absorption layer has substantially the same forbidden bandwidths Eg1 and Eg2 near an interface between said light absorption layer and said multiplication layer.
Claim 30
Dependent Claim
34 words
A photoelectric conversion apparatus according to claim 24, wherein said light absorption layer has substantially the same forbidden bandwidths Eg1 and Eg3 near an interface between said light absorption layer and said multiplication layer.
Claim 31
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 21, wherein said multiplication layer is formed on an underlying substrate on which a circuit has already been formed.
Claim 32
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 21, wherein an electrode, an electric charge injection blocking layer, said multiplication layer, said light absorption layer, an electric charge injection blocking layer, and a transparent electrode are stacked in an order named.
Claim 33
Dependent Claim
28 words
A photoelectric conversion apparatus according to claim 23, wherein a layer thickness of said stepback layer is not less than 50 Å and not more than 1 µm.
Claim 34
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 25, wherein a layer thickness of said high-concentration impurity layer is not more than a mean free path λ of electrons in said high-concentration impurity layer.
Claim 35
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 25, wherein a layer thickness of each of said electric charge injection blocking layers is not less than 50 Å and not more than 2,000 Å.
Claim 36
Dependent Claim
51 words
A photoelectric conversion apparatus characterized by comprising: a light absorption layer, formed of a non-monocrystalline material, for absorbing light and generating photocarriers; and a multiplication layer formed of a non-monocrystalline material, and constituted by alternately stacking a layer having a large dielectric constant and a layer having a small dielectric constant.
Claim 37
Dependent Claim
24 words
A photoelectric conversion apparatus according to claim 36, wherein the non-monocrystalline material includes an amorphous material, a fine crystalline material, and/or a polycrystalline material.
Claim 38
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 36, wherein a ratio of the dielectric constants of said layer having the large dielectric constant and said layer having the small dielectric constant forming said multiplication layer is not less than 1.5.
Claim 39
Dependent Claim
18 words
A photoelectric conversion apparatus according to claim 36, wherein said multiplication layer has at least one stepback structure.
Claim 40
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 36, wherein said light absorption layer has a constant forbidden bandwidth Eg1 in a direction of layer thickness thereof.
Claim 41
Dependent Claim
29 words
A photoelectric conversion apparatus according to claim 36, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in a light incidence direction.
Claim 42
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 36, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in direction opposite to a light incidence direction.
Claim 43
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 36, wherein said multiplication layer is formed on an underlying substrate on which a circuit has already been formed.
Claim 44
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 36, wherein an electrode, an electric charge injection blocking layer, said multiplication layer, said light absorption layer, an electric charge injection blocking layer, and a transparent electrode are stacked in an order named.
Claim 45
Dependent Claim
35 words
A photoelectric conversion apparatus according to claim 36, wherein a layer thickness of said layer having the large dielectric constant is not less than 1.5 times that of said layer having the small dielectric constant.
Claim 46
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 36, wherein a layer thickness of said layer having the large dielectric constant is not less than 30 Å and not more than 3,000 Å.
Claim 47
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 36, wherein a layer thickness of said layer having the small dielectric constant is not less than 20 Å and not more than 2,000 Å.
Claim 48
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 39, wherein a layer thickness of each of said electric charge injection blocking layers is not less than 50 Å and not more than 2,000 Å.
Claim 49
Dependent Claim
65 words
A photoelectric conversion apparatus characterized by comprising: a light absorption layer, formed of a non-monocrystalline material, for absorbing light and generating photocarriers; and a multiplication layer formed of a non-monocrystalline material, and having a layer region for generating an electric field high enough to cause a carrier drift but not to cause ionization upon application of a bias, and a stepback region for causing ionization.
Claim 50
Dependent Claim
24 words
A photoelectric conversion apparatus according to claim 49, wherein the non-monocrystalline material includes an amorphous material, a fine crystalline material, and/or a polycrystalline material.
Claim 51
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 49, wherein said multiplication layer is constituted by alternately stacking a layer having a large dielectric constant and a layer having a small dielectric constant.
Claim 52
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 51, wherein a ratio of the dielectric constants of said layer having the large dielectric constant and said layer having the small dielectric constant forming said multiplication layer is not less than 1.5.
Claim 53
Dependent Claim
18 words
A photoelectric conversion apparatus according to claim 49, wherein said multiplication layer has at least one stepback structure.
Claim 54
Dependent Claim
39 words
A photoelectric conversion apparatus according to claim 49, wherein said multiplication layer has at least one stepback layer in which a forbidden bandwidth is continuously changed to have a minimum forbidden bandwidth Eg2 and a maximum forbidden bandwidth Eg3.
Claim 55
Dependent Claim
35 words
A photoelectric conversion apparatus according to claim 53 or 54, wherein said multiplication layer has a plurality of stepback layers, and has a high-concentration impurity containing layer containing an impurity between the adjacent stepback layers.
Claim 56
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 49, wherein said light absorption layer has a constant forbidden bandwidth Eg1 in a direction of layer thickness thereof.
Claim 57
Dependent Claim
29 words
A photoelectric conversion apparatus according to claim 49, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in a light incidence direction.
Claim 58
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 49, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in direction opposite to a light incidence direction.
Claim 59
Dependent Claim
34 words
A photoelectric conversion apparatus according to claim 54, wherein said light absorption layer has substantially the same forbidden bandwidths Eg1 and Eg2 near an interface between said light absorption layer and said multiplication layer.
Claim 60
Dependent Claim
34 words
A photoelectric conversion apparatus according to claim 54, wherein said light absorption layer has substantially the same forbidden bandwidths Eg1 and Eg3 near an interface between said light absorption layer and said multiplication layer.
Claim 61
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 49, wherein said multiplication layer is formed on an underlying substrate on which a circuit has already been formed.
Claim 62
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 49, wherein an electrode, an electric charge injection blocking layer, said multiplication layer, said light absorption layer, an electric charge injection blocking layer, and a transparent electrode are stacked in an order named.
Claim 63
Dependent Claim
35 words
A photoelectric conversion apparatus according to claim 51, wherein a layer thickness of said layer having the large dielectric constant is not less than 1.5 times that of said layer having the small dielectric constant.
Claim 64
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 51, wherein a layer thickness of said layer having the large dielectric constant is not less than 30 Å and not more than 3,000 Å.
Claim 65
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 51, wherein a layer thickness of said layer having the small dielectric constant is not less than 20 Å and not more than 2,000 Å.
Claim 66
Dependent Claim
28 words
A photoelectric conversion apparatus according to claim 53, wherein a layer thickness of said stepback layer is not less than 50 Å and not more than 1 µm.
Claim 67
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 55, wherein a layer thickness of said high-concentration impurity layer is not more than a mean free path λ of electrons in said high-concentration impurity layer.
Claim 68
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 55, wherein a layer thickness of each of said electric charge injection blocking layers is not less than 50 Å and not more than 2,000 Å.
Claim 69
Dependent Claim
79 words
A photoelectric conversion apparatus characterized by comprising: a photoelectric conversion unit having a plurality of pixels each comprising a light absorption layer, formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer, formed of a non-monocrystalline material, for multiplying the photocarriers generated by said light absorption layer; scanning means for transferring carriers from said photoelectric conversion unit as signal charges; and read means for reading out the signal charges transferred from said scanning means.
Claim 70
Dependent Claim
24 words
A photoelectric conversion apparatus according to claim 69, wherein the non-monocrystalline material includes an amorphous material, a fine crystalline material, and/or a polycrystalline material.
Claim 71
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 69, wherein said multiplication layer is constituted by alternately stacking a layer having a large dielectric constant and a layer having a small dielectric constant.
Claim 72
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 71, wherein a ratio of the dielectric constants of said layer having the large dielectric constant and said layer having the small dielectric constant forming said multiplication layer is not less than 1.5.
Claim 73
Dependent Claim
18 words
A photoelectric conversion apparatus according to claim 69, wherein said multiplication layer has at least one stepback structure.
Claim 74
Dependent Claim
39 words
A photoelectric conversion apparatus according to claim 69, wherein said multiplication layer has at least one stepback layer in which a forbidden bandwidth is continuously changed to have a minimum forbidden bandwidth Eg2 and a maximum forbidden bandwidth Eg3.
Claim 75
Dependent Claim
35 words
A photoelectric conversion apparatus according to claim 73 or 74, wherein said multiplication layer has a plurality of stepback layers, and has a high-concentration impurity containing layer containing an impurity between the adjacent stepback layers.
Claim 76
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 69, wherein said light absorption layer has a constant forbidden bandwidth Eg1 in a direction of layer thickness thereof.
Claim 77
Dependent Claim
29 words
A photoelectric conversion apparatus according to claim 69, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in a light incidence direction.
Claim 78
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 69, wherein said light absorption layer has a region where a forbidden bandwidth Eg1 thereof is increased in direction opposite to a light incidence direction.
Claim 79
Dependent Claim
34 words
A photoelectric conversion apparatus according to claim 74, wherein said light absorption layer has substantially the same forbidden bandwidths Eg1 and Eg2 near an interface between said light absorption layer and said multiplication layer.
Claim 80
Dependent Claim
34 words
A photoelectric conversion apparatus according to claim 74, wherein said light absorption layer has substantially the same forbidden bandwidths Eg1 and Eg3 near an interface between said light absorption layer and said multiplication layer.
Claim 81
Dependent Claim
26 words
A photoelectric conversion apparatus according to claim 69, wherein said multiplication layer is formed on an underlying substrate on which a circuit has already been formed.
Claim 82
Dependent Claim
40 words
A photoelectric conversion apparatus according to claim 69, wherein an electrode, an electric charge injection blocking layer, said multiplication layer, said light absorption layer, an electric charge injection blocking layer, and a transparent electrode are stacked in an order named.
Claim 83
Dependent Claim
35 words
A photoelectric conversion apparatus according to claim 71, wherein a layer thickness of said layer having the large dielectric constant is not less than 1.5 times that of said layer having the small dielectric constant.
Claim 84
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 71, wherein a layer thickness of said layer having the large dielectric constant is not less than 30 Å and not more than 3,000 Å.
Claim 85
Dependent Claim
32 words
A photoelectric conversion apparatus according to claim 71, wherein a layer thickness of said layer having the small dielectric constant is not less than 20 Å and not more than 2,000 Å.
Claim 86
Dependent Claim
28 words
A photoelectric conversion apparatus according to claim 73, wherein a layer thickness of said stepback layer is not less than 50 Å and not more than 1 µm.
Claim 87
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 75, wherein a layer thickness of said high-concentration impurity layer is not more than a mean free path λ of electrons in said high-concentration impurity layer.
Claim 88
Dependent Claim
33 words
A photoelectric conversion apparatus according to claim 75, wherein a layer thickness of each of said electric charge injection blocking layers is not less than 50 Å and not more than 2,000 Å.
References Cited (Backward Citations)
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