Isolation of photogenerated carriers within an originating collecting region

Claim 1

A method of making a photosensing array to produce an array for optical imaging comprising, forming an array of spaced apart photosensing elements on a first surface of a semiconductor substrate, said semiconductor substrate having a first type of electrical conductivity and a first level of electrical conductivity, said semiconductor substrate being doped with a conductive impurity to have a uniform conductivity type and a uniform concentration of said conductive impurity, and creating collecting regions within said monolithic semiconductor material and between said photosensing elements comprising the substeps of: depositing a metal on said first surface between adjacent photosensing elements, and forming downwardly extending thin recrystallization regions into said semiconductor substrate to a distance from said first surface that is less than the thickness of said semiconductor substrate using thermal gradient zone melting, the depth of the recrystallization regions being such that the recrystallization regions substantially impedes the migration of photogenerated carriers from one collecting region to an adjacent collecting region.

Claim 2

A method of making a photosensing array to produce an array for optical imaging comprising, forming an array of spaced apart photosensing elements on a first surface of a semiconductor substrate, said semiconductor substrate having a first type of electrical conductivity and a first level of electrical conductivity, said semiconductor substrate being doped with a conductive impurity to have a uniform conductivity type and a uniform concentration of said conductive impurity, and creating collecting regions within said monolithic semiconductor material and between said photosensing elements comprising the substeps of: depositing a metal on said first surface between adjacent photosensing elements, and forming downwardly extending thin recrystallization regions into said semiconductor substrate to a distance from said first surface that is less than the thickness of said semiconductor substrate using thermal gradient zone melting, the depth of the recrystallization regions being such that the recrystallization regions substantially impedes the migration of photogenerated carriers from one collecting region to an adjacent collecting region.

Claim 3

A method of making an array of photosensing elements, comprising the steps of: providing a semiconductor layer having a first type of electrical conductivity and a first level of electrical conductivity, said semiconductor layer being doped with conductive impurity to have a uniform conductivity type and a uniform concentration of said conductive impurity, forming on a first surface of said semiconductor layer an array of photosensing elements, depositing upon said first surface and between said individual photosensing elements droplets of a metal, forming recrystallized regions between said photosensing elements by thermally migrating said droplets downwardly into said semiconductor layer, wherein the depth of said recrystallization regions is less than the thickness of said semiconductor layer, forming collecting regions thereby, and restricting photogenerated carriers created by electromagnetic energy having a wavelength of up to 1000 nm to the collecting region within which said photogenerated carriers are created by selecting the thickness of said semiconductor layer and the depth of said recrystallization regions such that said recrystallized regions substantially prevents said photogenerated carriers from migrating to collecting regions within which said photogenerated carriers are created.

Claim 4

A method of making an array of photosensing elements, comprising the steps of: providing a semiconductor layer having a first type of electrical conductivity and a first level of electrical conductivity, said semiconductor layer being doped with conductive impurity to have a uniform conductivity type and a uniform concentration of said conductive impurity, forming on a first surface of said semiconductor layer an array of photosensing elements, depositing upon said first surface and between said individual photosensing elements droplets of a metal, forming recrystallized regions between said photosensing elements by thermally migrating said droplets downwardly into said semiconductor layer, wherein the depth of said recrystallization regions is less than the thickness of said semiconductor layer, forming collecting regions thereby, and restricting photogenerated carriers created by electromagnetic energy having a wavelength of up to 1000 nm to the collecting region within which said photogenerated carriers are created by selecting the thickness of said semiconductor layer and the depth of said recrystallization regions such that said recrystallized regions substantially prevents said photogenerated carriers from migrating to collecting regions within which said photogenerated carriers are created.

Claim 5

A method of making a photosensing array to produce an array for optical imaging comprising, forming an array of spaced apart photosensing elements on a first surface of a semiconductor substrate, the semiconductor substrate having a first type of electrical conductivity and a first level of electrical conductivity, the semiconductor substrate being doped with a conductive impurity to have a uniform conductivity type and a uniform concentration of the conductive impurity, and creating collecting regions within the semiconductor substrate and between the photosensing elements comprising the substeps of: depositing a metal on the first surface between adjacent photosensing elements, and forming downwardly extending thin recrystallization regions into the semiconductor substrate using thermal gradient zone melting, the recrystallization regions extending through the entire thickness of the semiconductor substrate, the depth of the recrystallization regions being such that the recrystallization regions substantially impedes the migration of photogenerated carriers from one collecting region to an adjacent collecting region.

Claim 6

A method of making a photosensing array to produce an array for optical imaging comprising, forming an array of spaced apart photosensing elements on a first surface of a semiconductor substrate, the semiconductor substrate having a first type of electrical conductivity and a first level of electrical conductivity, the semiconductor substrate being doped with a conductive impurity to have a uniform conductivity type and a uniform concentration of the conductive impurity, and creating collecting regions within the semiconductor substrate and between the photosensing elements comprising the substeps of: depositing a metal on the first surface between adjacent photosensing elements, and forming downwardly extending thin recrystallization regions into the semiconductor substrate using thermal gradient zone melting, the recrystallization regions extending through the entire thickness of the semiconductor substrate, the depth of the recrystallization regions being such that the recrystallization regions substantially impedes the migration of photogenerated carriers from one collecting region to an adjacent collecting region.

Claim 7

A method of making an array of photosensing elements, comprising the steps of: providing a semiconductor layer having a first type of electrical conductivity and a first level of electrical conductivity, the semiconductor layer being doped with a conductive impurity to have a uniform conductivity type and a uniform concentration of the conductive impurity, forming on a first surface of the semiconductor layer an array of photosensing elements, depositing upon the first surface and between the individual photosensing elements droplets of a metal, forming recrystallized regions between the photosensing elements by thermally migrating the droplets downwardly into the semiconductor layer, the recrystallization regions extending through the entire thickness of the semiconductor layer, forming collecting regions thereby, and restricting photogenerated carriers created by electromagnetic energy having a wavelength of up to 1000 nm to the collecting region within which the photogenerated carriers are created by selecting the thickness of the semiconductor layer and the depth of the recrystallization regions such that the recrystallized regions substantially prevents the photogenerated carriers from migrating to collecting regions within which the photogenerated carriers are created.

Claim 8

A method of making an array of photosensing elements, comprising the steps of: providing a semiconductor layer having a first type of electrical conductivity and a first level of electrical conductivity, the semiconductor layer being doped with a conductive impurity to have a uniform conductivity type and a uniform concentration of the conductive impurity, forming on a first surface of the semiconductor layer an array of photosensing elements, depositing upon the first surface and between the individual photosensing elements droplets of a metal, forming recrystallized regions between the photosensing elements by thermally migrating the droplets downwardly into the semiconductor layer, the recrystallization regions extending through the entire thickness of the semiconductor layer, forming collecting regions thereby, and restricting photogenerated carriers created by electromagnetic energy having a wavelength of up to 1000 nm to the collecting region within which the photogenerated carriers are created by selecting the thickness of the semiconductor layer and the depth of the recrystallization regions such that the recrystallized regions substantially prevents the photogenerated carriers from migrating to collecting regions within which the photogenerated carriers are created.