US4173496A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated solar cell array
Assignee: Texas Instruments Inc
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Filing: 1978-05-30
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Granted: 1979-11-06
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Expires: 1998-05-30
Abstract
Abstract An integrated, monolithic array of solar cells wherein isolation between cells permits series interconnection of the cells to provide an output voltage for the array equal to the sum of the voltages of the unit cells. Although normal PN junction isolation is ineffective when exposed to light, the present structure includes a form of junction isolation that is effective when exposed to light, or to other radiation. For example, a band of heavily doped P-type silicon, formed by thermomigration of aluminum through an N-type wafer, provides such isolation.
Inventors
- 👤 Shang-Yi Chiang
- 👤 Bernard G. Carbajal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:57
CPC Classifications
H; H10; H10F; H10F19/00; H10F19/20; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
130 words
An integrated solar cell array comprising a semiconductor body having a plurality of n-type regions extending to a surface thereof and isolated from each other by intervening heavily doped p-type regions; a shallow p-type region in each of said n-type regions to form a unit solar cell of said array; said semiconductor surface also including a pattern of grooves which provide lateral isolation between adjacent unit cells, wherein said heavily doped p-type regions extend between said grooves, parallel to said surface at a depth shallower than said grooves, thereby completing the isolation of said adjacent cells; and a conductive film on said surface, patterned to complete the interconnection of said cells in series, whereby the theoretical output voltage of the array is the sum of the voltages of the cells.
Claim 2
Dependent Claim
130 words
An integrated solar cell array comprising a semiconductor body having a plurality of n-type regions extending to a surface thereof and isolated from each other by intervening heavily doped p-type regions; a shallow p-type region in each of said n-type regions to form a unit solar cell of said array; said semiconductor surface also including a pattern of grooves which provide lateral isolation between adjacent unit cells, wherein said heavily doped p-type regions extend between said grooves, parallel to said surface at a depth shallower than said grooves, thereby completing the isolation of said adjacent cells; and a conductive film on said surface, patterned to complete the interconnection of said cells in series, whereby the theoretical output voltage of the array is the sum of the voltages of the cells.
Claim 3
Dependent Claim
21 words
An integrated array as in claim 1 wherein the heavily doped p-type regions have a dopant concentration approaching the solubility limit.
Claim 4
Dependent Claim
21 words
An integrated array as in claim 1 wherein said semiconductor is selected from monocrystalline silicon, polycrystalline silicon, gallium arsenide, and germanium.
Claim 5
Dependent Claim
35 words
An integrated array as in claim 1 wherein said heavily doped p-type regions have a minority carrier lifetime no greater than 10 nano seconds, and a width of at least two minority carrier diffusion lengths.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-05 | 1983-05-07 | 1983-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-05 | 1987-05-07 | 1987-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-05 | 1991-05-07 | 1991-11-06 | $7700.00 | Window Closed / Lapsed |