Patent US5474945A successfully refreshed from Google Patents.
US5474945A
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Method for forming semiconductor device comprising metal oxide
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1993-11-05
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Granted: 1995-12-12
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Expires: 2013-11-05
Abstract
Abstract An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
- 👤 Toshiji Hamatani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:20
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6757; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D30/6755; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0128; H10D84/013; H10D84/0135; H10D86/00; H10P; H10P14/00; H10P14/40; H10P14/412; H10P32/00; H10P32/30; H10P32/302; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
120 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor film on an insulating surface; forming a gate electrode comprising a metal on said semiconductor film with a gate insulating layer therebetween; oxidizing said metal of a peripheral portion of said gate electrode to form an oxide of said metal at least on a side surface of said gate electrode, said oxide having outer edges; and adding impurity ions into portions of said semiconductor film with said gate electrode and said oxide as a mask in order to form a pair of impurity regions with opposing inner edges in said semiconductor film, wherein said inner edges of said semiconductor film are determined by said outer edges.
Claim 2
Independent Claim
120 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor film on an insulating surface; forming a gate electrode comprising a metal on said semiconductor film with a gate insulating layer therebetween; oxidizing said metal of a peripheral portion of said gate electrode to form an oxide of said metal at least on a side surface of said gate electrode, said oxide having outer edges; and adding impurity ions into portions of said semiconductor film with said gate electrode and said oxide as a mask in order to form a pair of impurity regions with opposing inner edges in said semiconductor film, wherein said inner edges of said semiconductor film are determined by said outer edges.
Claim 3
Dependent Claim
65 words
The method of claim 1 further comprising the steps of: forming an insulating film on said insulating surface over said gate electrode; and forming at least one contact hole corresponding to one of a source and drain semiconductor region in said insulating film with a side surface of said contact hole located adjacent to said oxide formed on a side surface of said gate electrode.
Claim 4
Dependent Claim
24 words
The method of claim 2 wherein said contact hole forming step is carried out with said gate electrode and said oxide as a mask.
Claim 5
Dependent Claim
33 words
The method of claim 2 wherein said contact hole forming step is carried out to leave the insulating film on an upper surface of said gate electrode by the use of a photomask.
Claim 6
Dependent Claim
36 words
The method of claim 4 wherein the insulating film remains on said upper surface of said gate electrode with said oxide extending between said insulating film and said gate electrode by said contact hole forming step.
Claim 7
Dependent Claim
37 words
The method of claim 1 wherein said semiconductor film forming step is carried out by forming a silicon semiconductor film containing hydrogen therein on said insulating surface and subsequently crystallizing said silicon semiconductor film by thermal treatment.
Claim 8
Dependent Claim
24 words
The method of claim 1 wherein said impurity ions are directed toward said semiconductor in a vertical direction with respect to said insulating surface.
Claim 9
Dependent Claim
24 words
The method of claim 1 wherein said impurity ions are directed toward said semiconductor in an oblique direction with respect to said insulating surface.
Claim 10
Independent Claim
230 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor film on an insulating surface; forming a gate insulating layer on said semiconductor film; forming a gate electrode comprising a metal on said gate insulating layer; oxidizing said metal of a peripheral portion of said gate electrode by anodic oxidation to form an oxide of said metal at least in the vicinity of said semiconductor film; forming an insulating film on said gate insulating layer over said gate electrode; selectively removing the insulating film and the gate insulating layer by anisotropic etching to leave a portion of the insulating film and the gate insulating layer around a side of said gate electrode; selectively removing the semiconductor film by etching with said gate electrode and said oxide and the remaining portion of the insulating film as a mask; exposing a portion of the semiconductor film provided under the remaining portion of the insulating film and a portion of the gate insulating layer provided under the remaining portion of the insulating film by etching; forming a conductive film on said substrate over said oxide and the exposed portion of the semiconductor film; and patterning said conductive film with a mask to form source and drain electrodes which extend on said oxide and are in contact with upper and side surfaces of the exposed portion of the semiconductor film.
Claim 11
Independent Claim
230 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor film on an insulating surface; forming a gate insulating layer on said semiconductor film; forming a gate electrode comprising a metal on said gate insulating layer; oxidizing said metal of a peripheral portion of said gate electrode by anodic oxidation to form an oxide of said metal at least in the vicinity of said semiconductor film; forming an insulating film on said gate insulating layer over said gate electrode; selectively removing the insulating film and the gate insulating layer by anisotropic etching to leave a portion of the insulating film and the gate insulating layer around a side of said gate electrode; selectively removing the semiconductor film by etching with said gate electrode and said oxide and the remaining portion of the insulating film as a mask; exposing a portion of the semiconductor film provided under the remaining portion of the insulating film and a portion of the gate insulating layer provided under the remaining portion of the insulating film by etching; forming a conductive film on said substrate over said oxide and the exposed portion of the semiconductor film; and patterning said conductive film with a mask to form source and drain electrodes which extend on said oxide and are in contact with upper and side surfaces of the exposed portion of the semiconductor film.
Claim 12
Dependent Claim
27 words
The method of claim 9 further comprising the step of implanting impurities into the exposed portion of the semiconductor film to form source and drain regions therein.
Claim 13
Dependent Claim
28 words
The method of claim 9 further comprising the step of implanting impurities into the semiconductor film with said oxide as a mask before said insulating film forming step.
Claim 14
Independent Claim
126 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor island on an insulating surface; forming a gate insulating layer on said semiconductor island; forming a gate electrode comprising a metal on said gate insulating layer; oxidizing said metal of a peripheral portion of said gate electrode by anodic oxidation to form an oxide of said metal at least in the vicinity of said semiconductor island said oxide having outer edges; and adding impurity ions into portions of said semiconductor film with said gate electrode and said oxide as a mask in order to form a pair of impurity regions with opposing inner edges in said semiconductor film, wherein said inner edges of said semiconductor film are determined by said outer edges.
Claim 15
Independent Claim
126 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor island on an insulating surface; forming a gate insulating layer on said semiconductor island; forming a gate electrode comprising a metal on said gate insulating layer; oxidizing said metal of a peripheral portion of said gate electrode by anodic oxidation to form an oxide of said metal at least in the vicinity of said semiconductor island said oxide having outer edges; and adding impurity ions into portions of said semiconductor film with said gate electrode and said oxide as a mask in order to form a pair of impurity regions with opposing inner edges in said semiconductor film, wherein said inner edges of said semiconductor film are determined by said outer edges.
Claim 16
Dependent Claim
159 words
The method of claim 12 further comprising the steps of: selectively removing the gate insulating layer with said gate electrode and said oxide as a mask; forming an insulating film on said insulating surface over said oxide; selectively removing the insulating film by anisotropic etching to leave a portion of the insulating film around a side of said gate electrode; selectively removing the semiconductor island by etching with said gate electrode and said oxide and the remaining portion of the insulating film as a mask; removing the remaining portion of the insulating film by etching to expose a portion of the semiconductor island provided under the remaining portion of the insulating film; forming a conductive film on said insulating surface over the exposed portion of the semiconductor island; and patterning said conductive film with a mask to form source and drain electrodes which extend on said oxide and are in contact with the exposed portion of the semiconductor island.
Claim 17
Dependent Claim
24 words
The method of claim 12 wherein said impurity ions are directed toward said semiconductor in a vertical direction with respect to said insulating surface.
Claim 18
Dependent Claim
24 words
The method of claim 12 wherein said impurity ions are directed toward said semiconductor in an oblique direction with respect to said insulating surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-11 | 1999-06-12 | 1999-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-11 | 2003-06-12 | 2003-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-11 | 2007-06-12 | 2007-12-12 | $7700.00 | Window Closed / Lapsed |