Nitridation of SIMOX buried oxide

Claim 2

In a process for making a semiconductor substrate in which a buried insulating layer is formed between upper and lower semiconductor regions, a method of increasing the electrical isolation between the upper and lower semiconductor regions comprising the following steps: (a) forming a buried insulating layer in a buried insulator region; (b) implanting nitrogen ions into the substrate to form a distribution of nitrogen ions centered at the same general depth as the center of the buried insulating layer region; and (c) heating the substrate to cause migration of nitrogen ions to the interface regions between the buried insulating layer and the upper and lower semiconductor regions, whereby the nitrogen passivates said interface regions.

Claim 3

A method as in claim 1 in which the buried insulating layer is formed in the substrate by steps which include implanting oxygen ions into the substrate to form a distribution of oxygen ions centered at an implant depth within the substrate and annealing said substrate to form a buried layer of oxide, said step (b) of implanting nitrogen ions is performed before the step of implanting oxygen ions into the substrate and includes implanting nitrogen ions to a depth which forms a distribution of nitrogen ions centered at generally the same implant depth at which the distribution of oxygen ions is centered when the oxygen ions are implanted into the substrate, and said step (c) of heating the substrate is performed during the step of annealing said substrate to form a buried layer of oxide.

Claim 4

A method as in claim 1 in which the buried insulating layer is formed in the substrate by steps which include implanting oxygen ions into the substrate to form a distribution of oxygen ions centered at an implant depth within the substrate and annealing said substrate to form a buried layer of oxide, said step (b) of implanting nitrogen ions is performed after the step of implanting oxygen ions into the substrate and includes implanting nitrogen ions to a depth which forms a distribution of nitrogen ions centered at generally the same implant depth at which the distribution of oxygen ions is centered when the oxygen ions are implanted into the substrate, and said step (c) of heating the substrate is performed during the step of annealing said substrate to form a buried layer of oxide.

Claim 5

A method as in claim 1 in which the buried insulating layer is formed in the substrate by steps which include implanting oxygen ions into the substrate to form a distribution of oxygen ions centered at an implant depth within the substrate and annealing said substrate to form a buried layer of oxide, said step (b) of implanting nitrogen ions is performed simultaneously with the step of implanting oxygen ions into the substrate and includes implanting nitrogen ions to a depth which forms a distribution of nitrogen ions centered at generally the same implant depth at which the distribution of oxygen ions is centered when the oxygen ions are implanted into the substrate, and said step (c) of heating the substrate is performed during the step of annealing said substrate to form a buried layer of oxide.

Claim 6

A method as in claim 1 in which the buried insulating layer is formed in the substrate by steps which include implanting oxygen ions into the substrate to form a distribution of oxygen ions centered at an implant depth within the substrate and annealing said substrate to form a buried layer of oxide, said step (b) of implanting nitrogen ions is performed after the steps of implanting oxygen ions into the substrate and annealing said substrate to form a buried layer of oxide and step (b) further includes implanting the nitrogen ions to a depth which forms a distribution of nitrogen ions centered generally at the same implant depth at which the distribution of oxygen ions is centered when the oxygen ions are implanted into the substrate.

Claim 7

A method as in claim 1 in which the implant dose used in nitrogen implanting step (b) is in the range of about 1.0×10 11 to 1.0×10 13 ions/cm 2 .

Claim 8

A method as in claim 1 in which the buried insulating layer is formed in the substrate by steps which include implanting oxygen ions through a first surface of the substrate to form a distribution of oxygen ions centered at an implant depth beneath the first surface using an implant dose in the range of about, 1.0×10 17 to 3.0×10 18 ions/cm 2 and an on implantation energy in the range of about 30 KeV to 120 KeV, and said step (b) of implanting nitrogen ions into the substrate uses an implant dose in the range of about 1.0×10 11 to 1.0×10 13 ions/cm 2 and an ion implantation energy which is in the range of between about zero percent (0%) to twenty-five percent (25%) less than the ion implantation energy used to implant oxygen ions into the substrate.

Claim 9

A method as in claim 1 in which said step (c) of heating the substrate includes heating the substrate to a temperature of at least 700° C. for at least 10 minutes.

Claim 10

A method as in claim 8 in which said step (c) of heating the substrate includes heating the substrate to a temperature in the range of about 700° C. to 1000° C. for a duration in the range of about 10 minutes to 30 minutes.

Claim 11

In a process for making a buried-oxide semiconductor substrate in which a buried oxide layer is formed between upper and lower semiconductor regions of the substrate by steps which include (1) implanting oxygen ions through a first surface of the substrate to form a distribution of oxygen ions centered at an implant depth beneath the first surface, and (2) annealing the substrate to form the buried oxide layer within the substrate, a method of increasing the electrical isolation between the upper and lower semiconductor regions comprising: (a) at any time during the processing of the substrate to form the buried oxide layer, including preceding step (1), between steps (1) and (2), and subsequent to step (2), implanting nitrogen ions into the substrate through said first surface to a depth which forms a distribution of nitrogen ions centered at about the center of the implant depth of the oxygen ions implanted in step (1); and (b) during or after the annealing step (2) in which the buried oxide layer is formed in the substrate, heating the substrate to cause migration of the nitrogen ions to the interface regions between the buried oxide layer and the upper and lower semiconductor regions, whereby the nitrogen passivates the interface regions and increases the electrical isolation between the upper and lower semiconductor regions.

Claim 12

In a process for making a buried-oxide semiconductor substrate in which a buried oxide layer is formed between upper and lower semiconductor regions of the substrate by steps which include (1) implanting oxygen ions through a first surface of the substrate to form a distribution of oxygen ions centered at an implant depth beneath the first surface, and (2) annealing the substrate to form the buried oxide layer within the substrate, a method of increasing the electrical isolation between the upper and lower semiconductor regions comprising: (a) at any time during the processing of the substrate to form the buried oxide layer, including preceding step (1), between steps (1) and (2), and subsequent to step (2), implanting nitrogen ions into the substrate through said first surface to a depth which forms a distribution of nitrogen ions centered at about the center of the implant depth of the oxygen ions implanted in step (1); and (b) during or after the annealing step (2) in which the buried oxide layer is formed in the substrate, heating the substrate to cause migration of the nitrogen ions to the interface regions between the buried oxide layer and the upper and lower semiconductor regions, whereby the nitrogen passivates the interface regions and increases the electrical isolation between the upper and lower semiconductor regions.

Claim 13

A method as in claim 10 in which oxygen implantation step (1) is carried out by directing an oxygen ion beam through said first surface using an implant dose in the range of about 1.0×10 17 to 3.0×10 18 ions/cm 2 and an ion implantation energy in the range of about of 30 KeV to 120 KeV and nitrogen implantation step (a) is carried out by directing a nitrogen ion beam through said first surface using an implant dose in the range of about 1.0×10 11 to 1.0×10 13 ions/cm 2 and an ion implantation energy which is in the range of between about zero percent (0%) to twenty-five percent (25%) less than the ion implantation energy used to implant oxygen ions into the substrate in step (1).

Claim 14

A method as in claim 10 in which step (a) is carried out by directing a nitrogen ion beam through said first surface using an implant dose in the range of about 1.0×10 11 to 1.0×10 13 ions/cm 2 .

Claim 15

A method as in claim 10 in which the implant depth of the oxygen ions implanted in step (1) and the depth of the center of the distribution of nitrogen ions implanted in step (a) exceeds approximately 3,000 Å beneath said first surface of the substrate.

Claim 16

In the formation of an active semiconductor device having a monocrystalline silicon channel region on a SIMOX semiconductor substrate, a method of increasing the electrical isolation between an upper silicon layer extending above a buried silicon dioxide layer and a lower silicon layer extending below the silicon dioxide layer, the method comprising the following steps: (a) providing a monocrystalline silicon substrate having a first surface; (b) implanting oxygen ions in said substrate to form a distribution of oxygen ions centered at an implant depth below said first surface; (c) annealing said substrate to form a buried silicon dioxide layer in said substrate extending between the upper and lower silicon layers; (d) implanting nitrogen ions into the substrate to a depth which forms distribution of nitrogen ions centered generally at the center of the implant depth of the oxygen ions implanted in step (b); (e) forming an active semiconductor device on the substrate, including using a portion of said upper silicon layer for the channel region of the device, and including maintaining said channel region substantially free of implanted nitrogen, whereby degradation of the monocrystalline silicon in the channel region is avoided; and (f) heating the substrate to cause migration of nitrogen ions to the interface regions extending between the silicon dioxide layer and the upper and lower silicon layers, whereby the nitrogen passivates said interface regions.

Claim 17

In the formation of an active semiconductor device having a monocrystalline silicon channel region on a SIMOX semiconductor substrate, a method of increasing the electrical isolation between an upper silicon layer extending above a buried silicon dioxide layer and a lower silicon layer extending below the silicon dioxide layer, the method comprising the following steps: (a) providing a monocrystalline silicon substrate having a first surface; (b) implanting oxygen ions in said substrate to form a distribution of oxygen ions centered at an implant depth below said first surface; (c) annealing said substrate to form a buried silicon dioxide layer in said substrate extending between the upper and lower silicon layers; (d) implanting nitrogen ions into the substrate to a depth which forms distribution of nitrogen ions centered generally at the center of the implant depth of the oxygen ions implanted in step (b); (e) forming an active semiconductor device on the substrate, including using a portion of said upper silicon layer for the channel region of the device, and including maintaining said channel region substantially free of implanted nitrogen, whereby degradation of the monocrystalline silicon in the channel region is avoided; and (f) heating the substrate to cause migration of nitrogen ions to the interface regions extending between the silicon dioxide layer and the upper and lower silicon layers, whereby the nitrogen passivates said interface regions.

Claim 18

A method as in claim 14 in which said step (f) of heating the substrate is performed during step (e) as part of the process of forming the active semiconductor device on the substrate.

Claim 19

A method as in claim 14 in which step (d) is performed at one of the following selected times: following step (c), or simultaneously with step (b), or preceding step (b).