US4774197A
Expired / Lapsed
US
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Method of improving silicon dioxide
Assignee: Cypress Semiconductor Corp
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Filing: 1986-06-17
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Granted: 1988-09-27
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Expires: 2006-06-17
Abstract
Abstract A method of improving the integrity of silicon dioxide is disclosed. As applicable, for example, to the formation of oxide regions in an integrated circuit (such as thin, gate oxides) an implantation of nitrogen ions is performed prior to high temperature processing steps of the circuit fabrication. High temperature steps then result in silicon-nitrogen compounds being formed at the interfaces of the silicon dioxide regions with subjacent and superjacent regions of the integrated circuit structure. These compounds prevent the incursion of impurities into the silicon dioxide which would degrade its quality.
Inventors
- 👤 Sameer S. Haddad
- 👤 Mong-Song Liang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6536; H10P14/6539; H10P30/00; H10P30/40; H10D64/681; H10D64/685; Y; Y10; Y10S; Y10S148/00; Y10S148/082; Y10S438/00; Y10S438/954
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
66 words
In the fabrication of an integrated circuit structure, a method of forming an improved silicon dioxide region in the structure, characterized by the steps of: (a) forming a masking layer superjacent said silicon dioxide regions; and (b) introducing nitrogen ions into said masking layer and said silicon dioxide regions, such that silicon-nitrogen compounds are formed at upper and lower boundary regions of said silicon dioxide regions.
Claim 2
Dependent Claim
66 words
In the fabrication of an integrated circuit structure, a method of forming an improved silicon dioxide region in the structure, characterized by the steps of: (a) forming a masking layer superjacent said silicon dioxide regions; and (b) introducing nitrogen ions into said masking layer and said silicon dioxide regions, such that silicon-nitrogen compounds are formed at upper and lower boundary regions of said silicon dioxide regions.
Claim 3
Dependent Claim
20 words
The method as set forth in claim 1, wherein said step of introducing nitrogen ions comprises: implanting said nitrogen ions.
Claim 4
Dependent Claim
52 words
The method as set forth in claim 1, wherein said step of introducing nitrogen ions is further characterized by: heat treating said structure such that said nitrogen ions react with said silicon dioxide to form silicon-nitrogen compounds at interfaces of said silicon dioxide regions with underlying and overlying layers of said structure.
Claim 5
Dependent Claim
23 words
The method as set forth in claim 1, wherein said step of forming a masking layer comprises: forming said masking layer of polysilicon.
Claim 6
Dependent Claim
36 words
The method as set forth in claim 4, wherein said step of forming said gate insulator regions further comprises: forming said silicon dioxide to have a thickness in the range of approximately 50 to 500 Angstroms.
Claim 7
Dependent Claim
85 words
In the fabrication of a field effect transistor (FET) structure, a method of reducing defects in a thin, FET gate insulator region, comprising the steps of: (a) forming a gate insulator region of silicon dioxide on a substrate; (b) forming a mask layer superjacent the silicon dioxide region; (c) implanting nitrogen ions into the silicon dioxide through the masking layer; and (d) heat treating said structure such that silicon-nitrogen compounds are formed at interfaces of said silicon dioxide with said masking layer and said substrate.
Claim 8
Dependent Claim
85 words
In the fabrication of a field effect transistor (FET) structure, a method of reducing defects in a thin, FET gate insulator region, comprising the steps of: (a) forming a gate insulator region of silicon dioxide on a substrate; (b) forming a mask layer superjacent the silicon dioxide region; (c) implanting nitrogen ions into the silicon dioxide through the masking layer; and (d) heat treating said structure such that silicon-nitrogen compounds are formed at interfaces of said silicon dioxide with said masking layer and said substrate.
Claim 9
Dependent Claim
42 words
The method as set forth in claim 6, wherein said step of implanting nitrogen ions further comprises: implanting said ions in a dosage having a range of approximately 1×10 15 /cm 2 to 1×10 16 /cm 2 , at 60 keV energy.
Claim 10
Independent Claim
75 words
A method of fabricating an improved gate oxide for a silicon gate field-effect transistor (FET), comprising the steps of: (a) providing a gate oxide layer on a substrate; (b) providing a polysilicon layer on the gate oxide layer; (c) introducing nitrogen ions into the polysilicon layer; and (d) annealing the FET to introduce the nitrogen ions in the polysilicon layer into the gate oxide layer and to form silicon-nitrogen compounds in the gate oxide layer.
Claim 11
Independent Claim
75 words
A method of fabricating an improved gate oxide for a silicon gate field-effect transistor (FET), comprising the steps of: (a) providing a gate oxide layer on a substrate; (b) providing a polysilicon layer on the gate oxide layer; (c) introducing nitrogen ions into the polysilicon layer; and (d) annealing the FET to introduce the nitrogen ions in the polysilicon layer into the gate oxide layer and to form silicon-nitrogen compounds in the gate oxide layer.
Claim 12
Dependent Claim
29 words
A method according to claim 8, wherein said step (d) comprises forming silicon-ntirogen compounds at interfaces of the gate oxide layer with the substrate and with the polysilicon layer.
Claim 13
Dependent Claim
18 words
A method according to claim 9, wherein said step (a) comprises providing a silicon dioxide gate oxide layer.
Claim 14
Dependent Claim
20 words
A method according to claim 9, wherein said step (c) further comprises introducing nitrogen ions into the gate oxide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-27 | 1992-03-28 | 1992-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-27 | 1996-03-28 | 1996-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-27 | 2000-03-28 | 2000-09-27 | $7700.00 | Window Closed / Lapsed |