US4564394A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Preventing lateral oxide growth by first forming nitride layer followed by a composite masking layer
Assignee: Siemens AG
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Filing: 1984-07-12
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Granted: 1986-01-14
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Expires: 2004-07-12
Abstract
Abstract A limit is placed on the miniaturization of the field oxide structures in the manufacture of semiconductor layer arrangements due to the length of the thick oxide bird's beak. The diffusion of oxidizing agent is suppressed according to the invention by means of a thin diffusion barrier of silicon nitride which also produces no crystal faults in the desired temperature range. The natural oxide on the silicon wafers is also converted into a diffusion barrier as required by means of nitrogen implantation and/or special process management in the nitride deposition.
Inventors
- 👤 Egon Bussmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:07
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10P; H10P14/00; H10P14/60; H10P14/61; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P30/00; H10P30/40; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
139 words
In an improved process for producing a semiconductor layer arrangement utilizing the so called LOCOS or isoplanar procedure wherein a first nitride layer is applied to a silicon substrate and is then covered either by (a) a combination layer structure of interventing silicon oxide layers and then a second nitride layer, or (b) by a polysilicon layer structure, either of such layer structures being suitable as a masking for a subsequently applied field oxide structure, the improvement which comprises in combination: applying said first nitride layer in a thickness less than about 50 nm under low pressure conditions, implanting into said first nitride layer nitrogen, applying over said so implanted nitride layer an intermediate layer selected from the group consisting of silicon oxide and polysilicon, and thereafter covering said intermediate layer with a further layer comprised of silicon nitride.
Claim 2
Dependent Claim
139 words
In an improved process for producing a semiconductor layer arrangement utilizing the so called LOCOS or isoplanar procedure wherein a first nitride layer is applied to a silicon substrate and is then covered either by (a) a combination layer structure of interventing silicon oxide layers and then a second nitride layer, or (b) by a polysilicon layer structure, either of such layer structures being suitable as a masking for a subsequently applied field oxide structure, the improvement which comprises in combination: applying said first nitride layer in a thickness less than about 50 nm under low pressure conditions, implanting into said first nitride layer nitrogen, applying over said so implanted nitride layer an intermediate layer selected from the group consisting of silicon oxide and polysilicon, and thereafter covering said intermediate layer with a further layer comprised of silicon nitride.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-13 | 1989-07-15 | 1990-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-13 | 1993-07-15 | 1994-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-13 | 1997-07-15 | 1998-01-14 | $7700.00 | Window Closed / Lapsed |