Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer

Claim 1

A method of fabricating a MIS-type device comprising the steps of: forming selectively a conductor layer for a control electrode of the MIS-type device on an insulating layer formed on a major surface of a semiconductor substrate; converting the surface of said semiconductor substrate, which is not covered with said conductor layer, into an oxygen impermeable layer; and oxidizing thereafter the surface of said conductor layer by using said oxygen impermeable layer as a mask to form an oxidation film on said conductor layer.

Claim 2

A method of fabricating a MIS-type device comprising the steps of: forming selectively a conductor layer for a control electrode of the MIS-type device on an insulating layer formed on a major surface of a semiconductor substrate; converting the surface of said semiconductor substrate, which is not covered with said conductor layer, into an oxygen impermeable layer; and oxidizing thereafter the surface of said conductor layer by using said oxygen impermeable layer as a mask to form an oxidation film on said conductor layer.

Claim 4

A method of fabricating a MIS-type device comprising the steps of: forming selectively a first polycrystalline semiconductor layer as a control electrode of the MIS-type device on a semiconductor oxidation film formed on a semiconductor substrate; converting the surface of said semiconductor substrate, which is not covered with said polycrystalline semiconductor layer, into a nitride film; oxidizing thereafter the surface of said first polycrystalline semiconductor layer by using said nitride film as a mask thereby to form a first oxidation film on said first polycrystalline semiconductor layer; removing said nitride film to expose the surface of said semiconductor substrate; oxidizing the exposed surface of said semiconductor substrate to form a second oxidation film on said semiconductor substrate; and forming selectively a second polycrystalline semiconductor layer as a second control electrode which extends from said second oxidation film onto said first oxidation film.

Claim 5

A method of fabricating a MIS-type device comprising the steps of: forming selectively a first polycrystalline semiconductor layer as a control electrode of the MIS-type device on a semiconductor oxidation film formed on a semiconductor substrate; converting the surface of said semiconductor substrate, which is not covered with said polycrystalline semiconductor layer, into a nitride film; oxidizing thereafter the surface of said first polycrystalline semiconductor layer by using said nitride film as a mask thereby to form a first oxidation film on said first polycrystalline semiconductor layer; removing said nitride film to expose the surface of said semiconductor substrate; oxidizing the exposed surface of said semiconductor substrate to form a second oxidation film on said semiconductor substrate; and forming selectively a second polycrystalline semiconductor layer as a second control electrode which extends from said second oxidation film onto said first oxidation film.

Claim 7

A method of fabricating a MIS-type device comprising the steps of: forming selectively a polycrystalline semiconductor layer as a control electrode of the MIS-type device on a semiconductor oxidation film formed on a first conduction type semiconductor substrate; introducing a second conduction type-determining impurity opposite the first conduction type into the semiconductor substrate, which is not covered with said polycrystalline semiconductor layer, thereby to form a semiconductor region serving as a source or drain region of the MIS-type device; converting the surface of said semiconductor substrate, which is not covered with said polycrystalline semiconductor layer, into a nitride film; oxidizing the surface of said polycrystalline semiconductor layer by using said nitride film as a mask, thereby to form an oxidation film on said polycrystalline semiconductor layer; removing said nitride film to expose the surface of said semiconductor region; and forming a wiring layer coming into contact with the surface of said semiconductor region and extending onto said oxidation film.

Claim 8

A method of fabricating a MIS-type device comprising the steps of: forming selectively a polycrystalline semiconductor layer as a control electrode of the MIS-type device on a semiconductor oxidation film formed on a first conduction type semiconductor substrate; introducing a second conduction type-determining impurity opposite the first conduction type into the semiconductor substrate, which is not covered with said polycrystalline semiconductor layer, thereby to form a semiconductor region serving as a source or drain region of the MIS-type device; converting the surface of said semiconductor substrate, which is not covered with said polycrystalline semiconductor layer, into a nitride film; oxidizing the surface of said polycrystalline semiconductor layer by using said nitride film as a mask, thereby to form an oxidation film on said polycrystalline semiconductor layer; removing said nitride film to expose the surface of said semiconductor region; and forming a wiring layer coming into contact with the surface of said semiconductor region and extending onto said oxidation film.

Claim 13

A method of fabricating a MIS-type device comprising the steps of: forming selectively a conductor layer as a control electrode of the MIS-type device on a semiconductor oxidation film formed on a semiconductor substrate; converting the portion of said semiconductor oxidation film, which is not covered with said conductor layer, into a nitride film; and oxidizing thereafter the surface of said conductor layer thereby to form an oxidation film on said conductor layer by using said nitride film as a mask.

Claim 14

A method of fabricating a MIS-type device comprising the steps of: forming selectively a conductor layer as a control electrode of the MIS-type device on a semiconductor oxidation film formed on a semiconductor substrate; converting the portion of said semiconductor oxidation film, which is not covered with said conductor layer, into a nitride film; and oxidizing thereafter the surface of said conductor layer thereby to form an oxidation film on said conductor layer by using said nitride film as a mask.

Claim 17

A method of fabricating a MIS-type device comprising the steps of: forming selectively a first polycrystalline silicon layer serving as a first control electrode of the MIS-type device on an insulating layer formed on a major surface of a silicon substrate; forming a nitride film in each of the surface portions of said silicon substrate, which are located on the opposite sides of said first polycrystalline silicon layer and not covered with said first polycrystalline silicon layer, by implanting nitrogen ions into said surface portions of said silicon substrate; and subjecting said first polycrystalline silicon layer of the resultant silicon substrate to oxidation by using said nitride film as an oxygen impermeable mask, thereby to form a first silicon oxide film at the exposed surface of said first polycrystalline silicon layer.

Claim 18

A method of fabricating a MIS-type device comprising the steps of: forming selectively a first polycrystalline silicon layer serving as a first control electrode of the MIS-type device on an insulating layer formed on a major surface of a silicon substrate; forming a nitride film in each of the surface portions of said silicon substrate, which are located on the opposite sides of said first polycrystalline silicon layer and not covered with said first polycrystalline silicon layer, by implanting nitrogen ions into said surface portions of said silicon substrate; and subjecting said first polycrystalline silicon layer of the resultant silicon substrate to oxidation by using said nitride film as an oxygen impermeable mask, thereby to form a first silicon oxide film at the exposed surface of said first polycrystalline silicon layer.