EP0556795A2
Expired / Lapsed
EP
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Method of manufacturing substrate having semiconductor on insulator
Assignee: Mitsubishi Electric Corp
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Filing: 1993-02-17
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Granted: —
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Expires: 2013-02-17
Abstract
Abstract A polysilicon layer (8) is formed on a surface of a silicon substrate (1). Oxygen ions (2) are implanted into the silicon substrate through the polysilicon layer, and an SiO 2 film (3) is formed in the silicon substrate at a position in a prescribed depth from the surface of silicon substrate. A heat treatment is performed to a silicon layer (4) between the polysilicon layer and the SiO 2 film, thereby providing an SOI layer (5) with improved crystal quality.
Inventors
- 👤 Tetsuya c/o Chuo-Kenkyusho Nakai
- 👤 Yasuo c/o Mitsubishi Denki K. K. LSI Yamaguchi
- 👤 Tadashi c/o Mitsubishi Denki K. K. LSI Nishimura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 08:04
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P36/00; H10P36/03; H10P36/07; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
83 words
A method of manufacturing a substrate having a semiconductor on an insulator, comprising the steps of: forming a covering layer (8) on a main surface of a semiconductor substrate (1); forming an insulating layer (3) in said semiconductor substrate at a position in a prescribed depth from said main surface by implanting ions (2) into said semiconductor substrate through said covering layer; and performing a heat treatment to a region of said semiconductor substrate (4) between said covering layer and said insulating layer.
Claim 2
Dependent Claim
25 words
A method of manufacturing a substrate having a semiconductor on an insulator as recited in claim 1, wherein said covering layer (8) includes polycrystalline silicon.
Claim 3
Dependent Claim
25 words
A method of manufacturing a substrate having a semiconductor on an insulator as recited in claim 1, wherein said covering layer (8) includes amorphous silicon.
Claim 4
Independent Claim
28 words
A method of manufacturing a substrate having a semiconductor on an insulator as recited in one of claims 1 to 3, wherein said semiconductor substrate (1) includes silicon.
Claim 5
Independent Claim
27 words
A method of manufacturing a substrate having a semiconductor on an insulator as recited in one of claims 1 to 4, said ions (2) include oxygen ions.
Claim 6
Dependent Claim
25 words
A method of manufacturing a substrate having a semiconductor on an insulator as recited in claim 5, wherein said insulating layer (3) includes silicon oxide.
Claim 7
Independent Claim
67 words
A method of manufacturing a substrate having a semiconductor on an insulator as recited in one of claims 1 to 6, further comprising a step of forming a second covering layer (8b) on said covering layer (8a) after forming said insulating layer (3), said heat treatment being performed to the region of said semiconductor substrate (4) with said covering layer and said second covering layer being stacked.
Claim 8
Independent Claim
71 words
A method of manufacturing an SOI substrate having a semiconductor on an insulator as recited in one of claims 1 to 6, further comprising a step of removing said covering layer (8) after forming said insulating layer (3) and forming a second covering layer (8) on said main surface, said heat treatment being performed to the region of said semiconductor substrate (4) between said second covering layer and said insulating layer.
Claim 9
Independent Claim
83 words
A method of manufacturing an SOI substrate, comprising the steps of: forming a polycrystalline silicon layer (8) on a main surface of a silicon substrate (1); forming a silicon oxide layer (3) in said silicon substrate at a position in a prescribed depth from said main surface by implanting oxygen ions (2) into said silicon substrate through said polycrystalline silicon layer; and performing a heat treatment to a region of said silicon substrate (4) between said polycrystalline layer and said silicon oxide layer.
Claim 10
Independent Claim
150 words
A method of manufacturing an SOI substrate, comprising the steps of: forming a silicon oxide layer (3) at a position in a prescribed depth from said main surface by implanting oxygen ions (2) into said silicon substrate from the main surface of silicon substrate (1) having an element formation region (10a) and an element isolation region (10b); forming a silicon oxide film (9) on said element isolation region; forming a polycrystalline silicon layer (8) on said element formation region and said silicon oxide film; performing a heat treatment to a region of said silicon substrate (4) between said silicon oxide layer and said polycrystalline silicon layer; after said heat treatment, exposing a surface of said silicon oxide film and removing said polycrystalline silicon layer so as to leave the polycrystalline silicon layer on the element formation region; removing said silicon oxide film; and removing said polycrystalline silicon layer by etching.
References Cited (Backward Citations)
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