Method of making a VCSEL

Claim 1

A method for making a ridge vertical cavity surface emitting laser comprising the steps of: providing a substrate with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors, an active area, a second stack of distributed Bragg reflectors, a contact region, and a dielectric layer, wherein the first stack of distributed Bragg reflectors are on the surface, wherein the active area is on the first stack of distributed Bragg reflectors, wherein the second stack of distributed Bragg reflectors are on the active area, wherein the contact region is on the second stack of distributed Bragg reflectors, and wherein the dielectric layer is on the contact region; patterning a first isolation trench through the dielectric layer, the contact region, and into a portion of the second stack of distributed Bragg reflectors making a ridge, wherein the first isolation trench encloses a portion of the dielectric layer, the contact area and a portion of the second stack of distributed Bragg reflectors; patterning a second isolation trench circumscribing the first isolation trench through the dielectric layer, the contact region, the second stack of distributed Bragg reflectors, the active region and a portion of the first stack of distributed Bragg reflectors; forming a first electrical contact on the first stack of distributed Bragg reflectors; and forming a second electrical contact on the contact region of the ridge.

Claim 2

A method for making a ridge vertical cavity surface emitting laser comprising the steps of: providing a substrate with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors, an active area, a second stack of distributed Bragg reflectors, a contact region, and a dielectric layer, wherein the first stack of distributed Bragg reflectors are on the surface, wherein the active area is on the first stack of distributed Bragg reflectors, wherein the second stack of distributed Bragg reflectors are on the active area, wherein the contact region is on the second stack of distributed Bragg reflectors, and wherein the dielectric layer is on the contact region; patterning a first isolation trench through the dielectric layer, the contact region, and into a portion of the second stack of distributed Bragg reflectors making a ridge, wherein the first isolation trench encloses a portion of the dielectric layer, the contact area and a portion of the second stack of distributed Bragg reflectors; patterning a second isolation trench circumscribing the first isolation trench through the dielectric layer, the contact region, the second stack of distributed Bragg reflectors, the active region and a portion of the first stack of distributed Bragg reflectors; forming a first electrical contact on the first stack of distributed Bragg reflectors; and forming a second electrical contact on the contact region of the ridge.

Claim 8

A method for making a vertical cavity surface emitting laser comprising the steps of: providing a substrate with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors, an active area, a second stack of distributed Bragg reflectors, and a contact region; disposing a first silicon nitride layer on the contact region; masking the first silicon nitride layer, thereby generating exposed portions of the first silicon nitride layer and nonexposed portions of the first silicon nitride layer are covered, wherein at least one of the exposed portions surrounds a nonexposed portion; etching the exposed portions of the first silicon nitride layer through the contact region, and a portion of the second stack of distributed Bragg reflectors, thereby forming a first isolation trench surrounding a mesa; implanting the surface of the substrate with hydrogen forming a confining region; depositing a second layer of silicon nitride on the substrate; masking the second layer silicon nitride, wherein the masking covers the mesa and the first isolation trench while exposing another portion away from the first isolation trench; etching the exposed another portion of the second layer silicon nitride to remove the exposed portion of the second layer of silicon nitride as well as the contact region, the second stack of distributed Bragg reflectors, the active region, and a portion of the first stack of distributed Bragg reflectors, thereby forming a second isolation region; forming a metal contact on the first stack of distributed Bragg reflectors forming an isolation trench; depositing a third layer of silicon nitride on the substrate; masking the third layer of the silicon nitride, wherein the masking exposes the third layer of silicon nitride covering the mesa; etching the third layer of the silicon nitride, thereby removing the third layer of silicon nitride covering the mesa; depositing a conductive material on the substrate, masking the conductive material, wherein a portion of the conductive material on the mesa is exposed; etching the conductive material, thereby removing the portion of conductive material exposed on the mesa; disposing an anti-reflective coating on the surface of the substrate; masking the anti-reflective coating, wherein a portion of the anti-reflective coating on the conductive material is exposed; and etching the exposed portion of the anti-reflective coating, thereby removing the anti-reflective coating and exposing a portion of the conductive material.

Claim 9

A method for making a vertical cavity surface emitting laser comprising the steps of: providing a substrate with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors, an active area, a second stack of distributed Bragg reflectors, and a contact region; disposing a first silicon nitride layer on the contact region; masking the first silicon nitride layer, thereby generating exposed portions of the first silicon nitride layer and nonexposed portions of the first silicon nitride layer are covered, wherein at least one of the exposed portions surrounds a nonexposed portion; etching the exposed portions of the first silicon nitride layer through the contact region, and a portion of the second stack of distributed Bragg reflectors, thereby forming a first isolation trench surrounding a mesa; implanting the surface of the substrate with hydrogen forming a confining region; depositing a second layer of silicon nitride on the substrate; masking the second layer silicon nitride, wherein the masking covers the mesa and the first isolation trench while exposing another portion away from the first isolation trench; etching the exposed another portion of the second layer silicon nitride to remove the exposed portion of the second layer of silicon nitride as well as the contact region, the second stack of distributed Bragg reflectors, the active region, and a portion of the first stack of distributed Bragg reflectors, thereby forming a second isolation region; forming a metal contact on the first stack of distributed Bragg reflectors forming an isolation trench; depositing a third layer of silicon nitride on the substrate; masking the third layer of the silicon nitride, wherein the masking exposes the third layer of silicon nitride covering the mesa; etching the third layer of the silicon nitride, thereby removing the third layer of silicon nitride covering the mesa; depositing a conductive material on the substrate, masking the conductive material, wherein a portion of the conductive material on the mesa is exposed; etching the conductive material, thereby removing the portion of conductive material exposed on the mesa; disposing an anti-reflective coating on the surface of the substrate; masking the anti-reflective coating, wherein a portion of the anti-reflective coating on the conductive material is exposed; and etching the exposed portion of the anti-reflective coating, thereby removing the anti-reflective coating and exposing a portion of the conductive material.