Top emitting VCSEL with etch stop layer

Claim 3

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 1 wherein the step of etching includes masking the emitting surface to define the portion of the emitting surface to be etched.

Claim 4

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 2 wherein the step of masking includes forming a photoresist mask on the emitting surface of the second parallel mirror stack.

Claim 5

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 1 wherein the step of forming a second parallel mirror stack on the active and spacer layer with an emitting surface and a layer of etch stop material includes forming the layer of etch stop material from indium gallium phosphide.

Claim 6

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 4 wherein the step of forming the layer of etch stop material includes forming the layer with a thickness equivalent to a multiple of 1/4 of the optical wavelength of the laser emission within the etch stop material.

Claim 7

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 4 wherein the step of etching the second parallel mirror stack includes a first step of etching with an anisotropic etch and a second step of etching with a mirror stack wet etch that stops at the etch stop layer.

Claim 8

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 6 wherein the first step of etching includes using an RIE etch.

Claim 9

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 6 wherein the first step of etching includes using an ion mill etch.

Claim 10

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 1 wherein the second step of etching includes using H 3 PO 4 ,H 2 O 2 and H 2 O.

Claim 11

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 1 wherein the second step of etching includes using chlorine based RIE.

Claim 12

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 1 wherein the step of etching a portion of the second parallel mirror stack includes etching a trench in the second parallel mirror stack which surrounds and defines the emitting area.

Claim 13

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 11 including in addition the step of forming an oxygen/proton implant in the trench for current confinement.

Claim 14

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 11 including the step of depositing a layer of dielectric material over the emitting area, the trench and an additional portion of the emitting surface, removing the dielectric material from the emitting area and depositing an electrical conductor over the emitting area and the layer of dielectric material in the trench and the additional portion of the emitting surface.

Claim 15

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 13 wherein the step of removing the dielectric material from the emitting area includes the steps of spinning a photoresist layer over the emitting area and the trench to form a substantially planar layer of photoresist thereover, developing the photoresist layer to a depth such that the photoresist material on the emitting area is fully developed and the photoresist material in the trench is partially developed and removing the developed photoresist.

Claim 16

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 14 wherein the step of depositing an electrical conductor over the emitting area and the layer of dielectric material includes the step of forming a layer of transparent metal over the emitting area and the layer of dielectric material.

Claim 17

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 14 wherein the step of forming a layer of transparent metal over the emitting area and the layer of dielectric material includes the step of forming a layer of indium tin oxide over the emitting area and the layer of dielectric material.

Claim 18

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 14 wherein the step of depositing an electrical conductor over the emitting area and the layer of dielectric material further includes the step of forming a second layer of electrically conductive metal with a hole in it, on the transparent metal layer over the additional portion of the emitting surface.

Claim 19

A method of producing a top emitting vertical cavity surface emitting laser as claimed in claim 17 wherein the step of forming a layer of electrically conductive metal on the transparent metal layer includes forming a layer of Ti/Pt/Au.

Claim 20

In a top emitting vertical cavity surface emitting laser comprising: an active and spacer layer having first and second opposed major surfaces; a first parallel mirror stack affixed to and parallel with the first major surface and a second parallel mirror stack affixed to and parallel with the second major surface and defining an emitting surface on the second parallel mirror stack opposite the major surface; a layer of etch stop material positioned within the second parallel mirror stack a predetermined distance from the emitting surface and parallel therewith; a portion of the second parallel mirror stack being etched from the emitting surface to approximately an upper surface of the etch stop layer with a remaining portion of the second parallel mirror stack defining an emitting area in the emitting surface; and the remaining portion of the second parallel mirror stack being sufficient to promote lasing therein and the etched portion of the second parallel mirror stack being insufficient to promote lasing therein.

Claim 21

In a top emitting vertical cavity surface emitting laser comprising: an active and spacer layer having first and second opposed major surfaces; a first parallel mirror stack affixed to and parallel with the first major surface and a second parallel mirror stack affixed to and parallel with the second major surface and defining an emitting surface on the second parallel mirror stack opposite the major surface; a layer of etch stop material positioned within the second parallel mirror stack a predetermined distance from the emitting surface and parallel therewith; a portion of the second parallel mirror stack being etched from the emitting surface to approximately an upper surface of the etch stop layer with a remaining portion of the second parallel mirror stack defining an emitting area in the emitting surface; and the remaining portion of the second parallel mirror stack being sufficient to promote lasing therein and the etched portion of the second parallel mirror stack being insufficient to promote lasing therein.

Claim 22

In a top emitting vertical cavity surface emitting laser as claimed in claim 19 wherein the layer of etch stop material includes indium gallium phosphide.

Claim 23

In a top emitting vertical cavity surface emitting laser as claimed in claim 19 wherein the portion of the second parallel mirror stack which is etched defines a channel surrounding the emitting area.

Claim 24

In a top emitting vertical cavity surface emitting laser as claimed in claim 21 including an addition a transparent electrical contact positioned on the emitting surface.

Claim 25

In a top emitting vertical cavity surface emitting laser as claimed in claim 22 wherein the electrical contact includes a transparent metal.

Claim 26

In a top emitting vertical cavity surface emitting laser as claimed in claim 23 wherein the transparent metal includes indium tin oxide positioned over at least the emitting area.

Claim 27

In a top emitting vertical cavity surface emitting laser as claimed in claim 24 wherein the layer of indium tin oxide is positioned over the emitting area, the channel defined by the etched portion of the second parallel mirror stack and an additional portion of the emitting surface and a second conducting material is positioned on the additional portion in contact with the indium tin oxide.

Claim 28

In a top emitting vertical cavity surface emitting laser as claimed in claim 19 including in addition an oxygen implant positioned beneath the etched portion of the second parallel mirror stack.