Patent US3062668A successfully refreshed from Google Patents.
Patent US5464666A successfully refreshed from Google Patents.
US5464666A
Expired / Lapsed
US
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Process for chemical vapor codeposition of copper and aluminum alloys
Assignee: Air Products and Chemicals Inc
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Filing: 1995-02-06
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Granted: 1995-11-07
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Expires: 2015-02-06
Abstract
Abstract The present invention is a method for the simultaneous codeposition of copper and aluminum from volatile copper and aluminum precursors to form a layer on a substrate under chemical vapor phase conditions, such as the metallization of an aluminum/(0.25-4% copper) layer on a silicon semiconductor electronic device.
Inventors
- 👤 Stephen M. Fine
- 👤 David A. Bohling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:18
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C07; C07F; C07F1/00; C07F1/08; C07F5/00; C07F5/06; C07F5/061; C07F5/066; C22; C22C; C22C21/00; C22C21/12; C23C16/44; C23C16/50; C23C16/505
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
200 words
A method for the simultaneous codeposition of aluminum and copper on a substrate under chemical vapor deposition conditions to form a layer of aluminum and copper on said substrate, comprising the steps of: (a) heating said substrate to a temperature in the range of approximately 150° to 250° C.; (b) contacting said substrate at chemical vapor deposition conditions with a copper precursor of the formula: ##STR3## wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 are individually H, or C 1 -C 10 hydrocarbon; (c) simultaneously to step (b) contacting said substrate at chemical vapor deposition conditions with an aluminum precursor selected from the group consisting of: H.sub.3 AlN(R.sup.9)(R.sup.10)(R.sup.11), where R 9 , R 10 and R 11 are individually C 1 -C 4 hydrocarbon and at least one of the R groups can be CH 2 CH 2 N(CH 3 ) 2 , or H.sub.(3-x) Al(R.sup.12).sub.x where R 12 are individually C 1 -C 4 hydrocarbon and x=1-3, or Cl.sub.(3-x) Al(R.sup.13).sub.x where R 13 are individually C 1 -C 4 hydrocarbon and x=1-3; (d) codepositing a layer of aluminum and copper on said substrate.
Claim 2
Independent Claim
200 words
A method for the simultaneous codeposition of aluminum and copper on a substrate under chemical vapor deposition conditions to form a layer of aluminum and copper on said substrate, comprising the steps of: (a) heating said substrate to a temperature in the range of approximately 150° to 250° C.; (b) contacting said substrate at chemical vapor deposition conditions with a copper precursor of the formula: ##STR3## wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 are individually H, or C 1 -C 10 hydrocarbon; (c) simultaneously to step (b) contacting said substrate at chemical vapor deposition conditions with an aluminum precursor selected from the group consisting of: H.sub.3 AlN(R.sup.9)(R.sup.10)(R.sup.11), where R 9 , R 10 and R 11 are individually C 1 -C 4 hydrocarbon and at least one of the R groups can be CH 2 CH 2 N(CH 3 ) 2 , or H.sub.(3-x) Al(R.sup.12).sub.x where R 12 are individually C 1 -C 4 hydrocarbon and x=1-3, or Cl.sub.(3-x) Al(R.sup.13).sub.x where R 13 are individually C 1 -C 4 hydrocarbon and x=1-3; (d) codepositing a layer of aluminum and copper on said substrate.
Claim 3
Dependent Claim
81 words
The method of claim 1 wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 are individually selected from the group consisting of H, CH 3 , CH 2 CH 3 , CH 2 CH 2 CH 3 , CH(CH 3 ) 2 , CH 2 CH 2 CH 2 CH 3 , CH 2 CH(CH 3 ) 2 , CH(CH 3 ) 3 , and Phenyl.
Claim 4
Dependent Claim
22 words
The method of claim 2 wherein said copper precursor has R 5 , R 6 , R 7 , R 8 =methyl.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein said aluminum precursor is selected from the group consisting of trimethylaminealane, dimethylethylaminealane, N,N,N'N'-tetramethylethylene-1,2-diaminealane, dimethylaluminum hydride and mixtures thereof.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein said copper precursor is entrained in a carrier gas for contact with said substrate.
Claim 7
Dependent Claim
23 words
The method of claim 5 wherein said carrier gas is selected from the group consisting of nitrogen, helium, argon, hydrogen and mixtures thereof.
Claim 8
Dependent Claim
20 words
The method of claim 1 wherein said aluminum precursor is entrained in a carrier gas for contact with said substrate.
Claim 9
Dependent Claim
23 words
The method of claim 7 wherein said carrier gas is selected from the group consisting of nitrogen, helium, argon, hydrogen and mixtures thereof.
Claim 10
Dependent Claim
29 words
The method of claim 1 wherein said copper precursor is supplied in a liquid phase to a vaporization zone to vaporize said copper precursor before contact with said substrate.
Claim 11
Dependent Claim
29 words
The method of claim 1 wherein said aluminum precursor is supplied in a liquid phase to a vaporization zone to vaporize said aluminum precursor before contact with said substrate.
Claim 12
Dependent Claim
32 words
The method of claim 1 wherein said aluminum precursor and said copper precursor are mixed in the liquid phase and supplied to a vaporization zone to vaporize before contact with said substrate.
Claim 13
Dependent Claim
11 words
The method of claim 1 wherein said layer is aluminum/(0.25-4% copper).
Claim 14
Dependent Claim
19 words
The method of claim 1 wherein said chemical vapor deposition conditions are at a pressure of approximately 0.10-10 torr.
Claim 15
Dependent Claim
16 words
The method of claim 1 wherein said chemical vapor deposition conditions are at approximately atmospheric pressure.
Claim 16
Dependent Claim
30 words
The method of claim 1 wherein said chemical vapor deposition conditions are plasma enhanced by a radio frequency plasma operating at a range of approximately 100 KHz to 13.56 MHz.
References Cited (Backward Citations)
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