US5453153A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Zone-melting recrystallization process
Assignee: Kopin Corp
•
Filing: 1992-03-05
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Granted: 1995-09-26
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Expires: 2012-03-05
Abstract
Abstract An improved method of zone-melting recrystallizing of a silicon film on an insulator in which the film is implanted and annealed to achieve a reduction of the density of defects within the film.
Inventors
- 👤 John C. C. Fan
- 👤 Paul M. Zavracky
- 👤 Jagdish Narayan
- 👤 Lisa P. Allen
- 👤 Duy-Phach Vu
- 👤 Ngwe K. Cheong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
107 words
A method of reducing defect density within a silicon film formed on a insulator comprising: forming a non-single crystal silicon material on an insulating substrate; recrystallizing the non-single crystal silicon material to provide a layer of single crystal silicon having threading dislocations extending through the film between an upper surface of the film and an interface with the underlying insulator; implanting the film with silicon ions such that additional defects are formed in the film without substantially amorphizing the film; and annealing the film such that the threading dislocations react with the implanted ions to remove threading dislocations and implanted defects from the single crystal silicon film.
Claim 2
Independent Claim
107 words
A method of reducing defect density within a silicon film formed on a insulator comprising: forming a non-single crystal silicon material on an insulating substrate; recrystallizing the non-single crystal silicon material to provide a layer of single crystal silicon having threading dislocations extending through the film between an upper surface of the film and an interface with the underlying insulator; implanting the film with silicon ions such that additional defects are formed in the film without substantially amorphizing the film; and annealing the film such that the threading dislocations react with the implanted ions to remove threading dislocations and implanted defects from the single crystal silicon film.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the implanted defects have a maximum defect density near a central region of the film.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the ions to be implanted are selected from the group consisting of boron, phosphorus and silicon.
Claim 5
Dependent Claim
28 words
The method of claim 1 wherein the surface of the film is rotated off an axis defining a direction of implantation to reduce channeling of the implanted ions.
Claim 6
Dependent Claim
21 words
The method of claim 1 further comprising forming a thin dielectric layer over the surface of the film prior to implantation.
Claim 7
Independent Claim
104 words
A method of reducing defect density within a semiconductor film formed on an insulator comprising: forming a non-single crystal semiconductor material on an insulating substrate; recrystallizing the material to form a single crystal region having threading dislocations extending through the film between an upper surface of the film and an interface with the underlying insulator; implanting the film with ions of selected energy such that additional defects are formed in the film without substantially amorphizing the film; and annealing the film such that the threading dislocations react with the implanted ions to remove threading dislocations and implanted defects from the improved single crystal film.
Claim 8
Independent Claim
104 words
A method of reducing defect density within a semiconductor film formed on an insulator comprising: forming a non-single crystal semiconductor material on an insulating substrate; recrystallizing the material to form a single crystal region having threading dislocations extending through the film between an upper surface of the film and an interface with the underlying insulator; implanting the film with ions of selected energy such that additional defects are formed in the film without substantially amorphizing the film; and annealing the film such that the threading dislocations react with the implanted ions to remove threading dislocations and implanted defects from the improved single crystal film.
Claim 9
Dependent Claim
21 words
The method of claim 6 wherein the implanted defects have a maximum defect density near a central region of the film.
Claim 10
Dependent Claim
25 words
The method of claim 6 wherein the ions to be implanted are selected from the group consisting of a doping material and the semiconductor material.
Claim 11
Dependent Claim
28 words
The method of claim 6 wherein the surface of the film is rotated off an axis defining a direction of implantation to reduce channeling of the implanted ions.
Claim 12
Dependent Claim
21 words
The method of claim 6 further comprising forming a thin dielectric layer over the surface of the film prior to implantation.
Claim 13
Independent Claim
86 words
A method of reducing defect the density within crystallized silicon film comprising: zone-melting recrystallizing a non-single crystal silicon semiconductor material to provide a single crystal silicon semiconductor material on a supporting substrate, the silicon material having threading dislocations extending between an upper surface and an underlying insulator; implanting the single crystal silicon material with silicons ions to induce defects in the single crystal material without amorphization; and annealing the material to reduce the density of defects such that threading dislocations within the material have been removed.
Claim 14
Independent Claim
86 words
A method of reducing defect the density within crystallized silicon film comprising: zone-melting recrystallizing a non-single crystal silicon semiconductor material to provide a single crystal silicon semiconductor material on a supporting substrate, the silicon material having threading dislocations extending between an upper surface and an underlying insulator; implanting the single crystal silicon material with silicons ions to induce defects in the single crystal material without amorphization; and annealing the material to reduce the density of defects such that threading dislocations within the material have been removed.
Claim 15
Dependent Claim
31 words
The method of claim 11 further comprising rotating a surface of the silicon material off of a plane orthogonal to an axis defining a direction of implantation during the implanting step.
Claim 16
Dependent Claim
21 words
The method of claim 11 further comprising forming a dielectric layer over a surface of the silicon material to be implanted.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-09-25 | 1999-03-27 | 1999-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-25 | 2003-03-27 | 2003-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-25 | 2007-03-27 | 2007-09-26 | $7700.00 | Window Closed / Lapsed |