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Patent US5449631A successfully refreshed from Google Patents.
US5449631A
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Prevention of agglomeration and inversion in a semiconductor salicide process
Assignee: International Business Machines Corp
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Filing: 1994-07-29
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Granted: 1995-09-12
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Expires: 2014-07-29
Abstract
Abstract A conductor is fabricated by forming a layer of doped polysilicon on a semiconductor substrate, patterning the layer of doped polysilicon so as to form a conductor, forming a nitrogen-enriched metal film on the conductor, and converting the nitrogen-enriched metal film to a nitrogen-enriched metal silicide film, wherein nitrogen contained in the nitrogen-enriched metal silicide film provides for improved thermal stability thereof.
Inventors
- 👤 Kenneth J. Giewont
- 👤 Anthony J. Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:40
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/60; H10D64/62; H10D64/66; H10D64/661; H10D64/662; H10D64/663; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
88 words
A method of fabricating a conductor, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a layer of doped polysilicon on said semiconductor substrate; (c) patterning said layer of doped polysilicon so as to form a conductor; (d) forming a nitrogen-enriched metal film on said conductor; and (e) converting said nitrogen-enriched metal film to a nitrogen-enriched metal silicide film, wherein nitrogen contained in said nitrogen-enriched metal silicide film provides for improved thermal stability including inhibition of agglomeration and inversion of said nitrogen enriched metal silicide film.
Claim 2
Independent Claim
88 words
A method of fabricating a conductor, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a layer of doped polysilicon on said semiconductor substrate; (c) patterning said layer of doped polysilicon so as to form a conductor; (d) forming a nitrogen-enriched metal film on said conductor; and (e) converting said nitrogen-enriched metal film to a nitrogen-enriched metal silicide film, wherein nitrogen contained in said nitrogen-enriched metal silicide film provides for improved thermal stability including inhibition of agglomeration and inversion of said nitrogen enriched metal silicide film.
Claim 3
Dependent Claim
17 words
A method according to claim 1, wherein step (d) comprises sputter depositing using a sputter process plasma.
Claim 4
Dependent Claim
25 words
A method according to claim 2, further comprising the step of incorporating nitrogen into said sputter process plasma to form a nitrogen-enriched sputter process plasma.
Claim 5
Dependent Claim
21 words
A method according to claim 3, wherein between approximately 0.5% and 3% of nitrogen is incorporated into said sputter process plasma.
Claim 6
Dependent Claim
21 words
A method according to claim 3, wherein said sputter deposited nitrogen-enriched metal film includes between approximately 1% and 3% of nitrogen.
Claim 7
Dependent Claim
13 words
A method according to claim 2 wherein said sputter process plasma includes argon.
Claim 8
Dependent Claim
14 words
A method according to claim 1, wherein step (e) comprises a solid phase reaction.
Claim 9
Dependent Claim
47 words
A method according to claim 7, wherein step (d) includes bombarding a metal target with an argon-nitrogen plasma to displace molecules from said metal target, whereby nitrogen from said argon-nitrogen plasma is incorporated with the molecules displaced from said metal target to form said nitrogen-enriched metal film.
Claim 10
Independent Claim
89 words
A method of fabricating a conductor, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a layer of doped polysilicon on said semiconductor substrate; (c) patterning said layer of doped polysilicon so as to form a conductor; (d) sputter depositing a nitrogen enriched metal film on said conductor; (e) converting said nitrogen-enriched metal film to a nitrogen-enriched metal silicide film, wherein nitrogen contained in said nitrogen-enriched metal silicide film provides for improved thermal stability including inhibition of agglomeration and inversion of said nitrogen enriched metal silicide film.
Claim 11
Independent Claim
89 words
A method of fabricating a conductor, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a layer of doped polysilicon on said semiconductor substrate; (c) patterning said layer of doped polysilicon so as to form a conductor; (d) sputter depositing a nitrogen enriched metal film on said conductor; (e) converting said nitrogen-enriched metal film to a nitrogen-enriched metal silicide film, wherein nitrogen contained in said nitrogen-enriched metal silicide film provides for improved thermal stability including inhibition of agglomeration and inversion of said nitrogen enriched metal silicide film.
Claim 12
Independent Claim
194 words
A method of fabricating a semiconductor device, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a gate oxide film on said semiconductor substrate; (c) forming a layer of doped polysilicon on said gate oxide film; (d) patterning said layer of doped polysilicon and gate oxide film so as to form a gate electrode structure having sidewalls; (e) forming sidewall spacers on said sidewalls of said gate electrode structure; (f) forming a source region and a drain region in said semiconductor substrate adjacent to said gate electrode structure; (g) forming a nitrogen-enriched metal film on said gate electrode structure, said sidewall spacers and said semiconductor substrate, including over said source region and drain region; (h) converting said nitrogen-enriched metal film formed over said gate electrode structure and said source region and drain region to a nitrogen-enriched metal silicide film, wherein nitrogen contained in said nitrogen-enriched metal silicide film provides for improved thermal stability thereof; and (i) selectively removing films from said semiconductor substrate and said sidewall spacers such that said nitrogen-enriched metal silicide film remains on said gate electrode structure and on said source and drain regions for forming a semiconductor device.
Claim 13
Independent Claim
194 words
A method of fabricating a semiconductor device, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a gate oxide film on said semiconductor substrate; (c) forming a layer of doped polysilicon on said gate oxide film; (d) patterning said layer of doped polysilicon and gate oxide film so as to form a gate electrode structure having sidewalls; (e) forming sidewall spacers on said sidewalls of said gate electrode structure; (f) forming a source region and a drain region in said semiconductor substrate adjacent to said gate electrode structure; (g) forming a nitrogen-enriched metal film on said gate electrode structure, said sidewall spacers and said semiconductor substrate, including over said source region and drain region; (h) converting said nitrogen-enriched metal film formed over said gate electrode structure and said source region and drain region to a nitrogen-enriched metal silicide film, wherein nitrogen contained in said nitrogen-enriched metal silicide film provides for improved thermal stability thereof; and (i) selectively removing films from said semiconductor substrate and said sidewall spacers such that said nitrogen-enriched metal silicide film remains on said gate electrode structure and on said source and drain regions for forming a semiconductor device.
Claim 14
Dependent Claim
17 words
A method according to claim 10, wherein step (g) comprises sputter depositing using a sputter process plasma.
Claim 15
Dependent Claim
25 words
A method according to claim 11, further comprising the step of incorporating nitrogen into said sputter process plasma to form a nitrogen-enriched sputter process plasma.
Claim 16
Dependent Claim
21 words
A method according to claim 12, wherein between approximately 0.5% and 3% of nitrogen is incorporated into said sputter process plasma.
Claim 17
Dependent Claim
21 words
A method according to claim 12, wherein said sputter deposited nitrogen-enriched metal film includes between approximately 1% and 3% of nitrogen.
Claim 18
Dependent Claim
13 words
A method according to claim 11, wherein said sputter process plasma includes argon.
Claim 19
Dependent Claim
14 words
A method according to claim 10, wherein step (h) comprises a solid phase reaction.
Claim 20
Independent Claim
207 words
A method of fabricating a semiconductor device, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a gate oxide film on said semiconductor substrate; (c) forming a layer of doped polysilicon on said gate oxide film; (d) patterning said layer of doped polysilicon and gate oxide film so as to form a gate electrode structure having sidewalls; (e) forming sidewall spacers on said sidewalls of said gate electrode structure; (f) forming a source region and a drain region in said semiconductor substrate adjacent to said gate electrode structure; (g) sputter depositing a nitrogen-enriched metal film on said gate electrode structure, said sidewall spacers and said semiconductor substrate, including over said source region and said drain region; (h) converting said nitrogen-enriched metal film deposited over said gate electrode structure and said source region and drain region to a nitrogen-enriched metal silicide film, wherein nitrogen contained in said nitrogen-enriched metal silicide film provides for improved thermal stability including inhibition of agglomeration and inversion of said nitrogen enriched metal silicide film; (i) selectively removing films from said semiconductor substrate and said sidewall spacers such that said nitrogen-enriched metal silicide film remains on said gate electrode structure and on said source and drain regions for forming a semiconductor device.
Claim 21
Independent Claim
207 words
A method of fabricating a semiconductor device, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a gate oxide film on said semiconductor substrate; (c) forming a layer of doped polysilicon on said gate oxide film; (d) patterning said layer of doped polysilicon and gate oxide film so as to form a gate electrode structure having sidewalls; (e) forming sidewall spacers on said sidewalls of said gate electrode structure; (f) forming a source region and a drain region in said semiconductor substrate adjacent to said gate electrode structure; (g) sputter depositing a nitrogen-enriched metal film on said gate electrode structure, said sidewall spacers and said semiconductor substrate, including over said source region and said drain region; (h) converting said nitrogen-enriched metal film deposited over said gate electrode structure and said source region and drain region to a nitrogen-enriched metal silicide film, wherein nitrogen contained in said nitrogen-enriched metal silicide film provides for improved thermal stability including inhibition of agglomeration and inversion of said nitrogen enriched metal silicide film; (i) selectively removing films from said semiconductor substrate and said sidewall spacers such that said nitrogen-enriched metal silicide film remains on said gate electrode structure and on said source and drain regions for forming a semiconductor device.
Claim 22
Dependent Claim
47 words
A method according to claim 17, wherein step (g) includes bombarding a metal target with an argon-nitrogen plasma to displace molecules from said metal target, whereby nitrogen from said argon-nitrogen plasma is incorporated with the molecules displaced from said metal target to form said nitrogen-enriched metal film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-11 | 1999-03-13 | 1999-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-11 | 2003-03-13 | 2003-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-11 | 2007-03-13 | 2007-09-12 | $7700.00 | Window Closed / Lapsed |