Process for depositing high temperature superconducting oxide thin films

Claim 2

A process for in-situ depositing a uniform crystalline thin..film of a high temperature superconducting oxide onto a surface of a single crystal substrate having a front surface and a back surface comprising exposing said back surface to direct radiation from a radiant heat source to heat the substrate to a growth temperature of said superconducting oxide, and, while maintaining the radiation, sputtering the thin film onto the front surface, wherein the area of said film simultaneously deposited exceeds 6 cm 2 and the variation in T c from the average T c is plus or minus 2 K over the area of said film.

Claim 3

The process of claim 1 wherein said growth temperature is about 500° C. to about 900° C.

Claim 4

The process of claim 2 wherein said high temperature superconducting oxide is MBa 2 Cu 3 O 7-x , wherein M is Y or a rare earth metal and x is from about 0 to 0.3.

Claim 5

The process of claim 1 wherein said back surface of the substrate is coated with a layer of material to absorb said radiation prior to said exposure.

Claim 6

The process of claim 4 wherein said growth temperature is about 500° C. to about 900° C.

Claim 7

The process of claim 5 wherein said high temperature superconducting oxide is MBa 2 Cu 3 O 7-x , wherein M is Y or a rare earth metal and x is from about 0 to 0.3.

Claim 8

The process of claim 6 wherein said substrate is comprised of a single crystal of LaAlO 3 .

Claim 9

A process for in-situ depositing a first uniform crystalline thin film onto a back surface of a single crystal substrate, and a second uniform thin film onto a front surface of said substrate, said crystalline thin films being the same or different and comprised of high temperature superconducting oxides, said process comprising the steps of (a) forming a crystalline thin film of a first superconducting oxide on the back surface of the substrate, and (b) exposing said thin film formed in (a) on the back surface of the substrate to direct radiation from a radiant heat source thereby heating the substrate to the growth temperature of a second superconducting oxide, and, while maintaining said radiation, depositing by sputtering a second thin film of said second superconducting oxide on the front surface of the substrate, wherein the area of said film deposited on the front surface exceeds 6 cm 2 and the variation in T c from the average T c is a maximum of plus or minus 2 K over the area of said film.

Claim 10

A process for in-situ depositing a first uniform crystalline thin film onto a back surface of a single crystal substrate, and a second uniform thin film onto a front surface of said substrate, said crystalline thin films being the same or different and comprised of high temperature superconducting oxides, said process comprising the steps of (a) forming a crystalline thin film of a first superconducting oxide on the back surface of the substrate, and (b) exposing said thin film formed in (a) on the back surface of the substrate to direct radiation from a radiant heat source thereby heating the substrate to the growth temperature of a second superconducting oxide, and, while maintaining said radiation, depositing by sputtering a second thin film of said second superconducting oxide on the front surface of the substrate, wherein the area of said film deposited on the front surface exceeds 6 cm 2 and the variation in T c from the average T c is a maximum of plus or minus 2 K over the area of said film.

Claim 11

The process of claim 8 wherein the substrate is planar and said thin films are deposited on opposite sides of said planar substrate.

Claim 12

The process of claim 8 wherein said growth temperature is about 500° C. to about 900° C.

Claim 13

The process of claim 10 wherein said first and second high temperature superconducting oxides are the same high temperature superconducting oxide.

Claim 14

The process of claim 11 wherein said high temperature superconducting oxide is MBa 2 Cu 3 O 7-x , wherein M is Y or a rare earth metal and x is from about 0 to 0.3.

Claim 15

The process of claim 12 wherein said substrate is comprised of a single crystal of LaAlO 3 .

Claim 16

The process of claim 8 wherein said crystalline film of the first superconducting oxide is formed on said back surface of the substrate by exposing the front surface of the substrate to direct radiation from a radiant heat source to heat the substrate to a predetermined growth temperature of the first superconducting oxide, and, while maintaining the radiation, sputtering said first superconducting oxide onto said back surface to form in-situ crystalline film, wherein the area of said crystalline film exceeds 6 cm 2 .

Claim 17

The process of claim 14 wherein both said high temperature superconducting oxides are the same high temperature superconducting oxide.

Claim 18

The process of claim 15 wherein said high temperature superconducting oxide is MBa 2 Cu 3 O 7-x wherein M is Y or a rare earth metal and x is from about 0 to 0.3.