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US5436203A Expired / Lapsed US ⏱️ 0.0 years remaining

Shielded liquid encapsulated semiconductor device and method for making the same

Assignee: NXP USA Inc
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Filing: 1994-07-05
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Granted: 1995-07-25
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Expires: 2014-07-05
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Abstract

Abstract A semiconductor (30) is shielded from electromagnetic interference by a combination of a reference plane (22) of a circuitized substrate (12) and two different encapsulants. The first encapsulant (38) is an electrically insulative encapsulant which mechanically protects a semiconductor die (32). The first encapsulant is constrained by a dam structure (40) so as not to encapsulate conductive reference pads (18) which are electrically connected to the reference plane by conductive vias (20). A second encapsulant (42) is dispensed over the first encapsulant and is in contact with the reference pads. The second encapsulant is an electrically conductive encapsulant, and is preferably made of a precursor material having the same or similar properties as that of the first encapsulant, but is filled with conductive filler particles to establish electrical conductivity of the encapsulant. Accordingly, the semiconductor die is effectively shielded from both the top and bottom by the electrically conductive encapsulant and the reference plane.

Inventors

  • 👤 Paul T. Lin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 19:54
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/40; H10W76/42; H10W76/47; H10W42/00; H10W42/20; H10W42/261; H10W42/276; H10W74/00; H10W74/10; H10W74/111; H10W74/114; H10W74/117; H10W74/121; H10W90/00; H10W90/701; H10W72/00; H10W72/50; H10W72/541; H10W72/5449; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W90/731; H10W90/734; H10W90/751; H10W90/754; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49146

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 185 words
A method for making a semiconductor device comprising: providing a circuitized substrate having a first surface, an internal conductive reference plane, and a conductive member on the first surface which is electrically coupled to the reference plane; providing a semiconductor die; mounting the semiconductor die to the first surface of the substrate; providing electrical connections between the semiconductor die and the circuitized substrate; providing a first dam on the first surface of the substrate for surrounding the semiconductor die and establishing a first dammed area, wherein the conductive member is beyond the first dammed area; filling the first dammed area with a first encapsulant, which is an electrically insulative liquid encapsulant, such that the die is encapsulated; providing a second dam on the first surface of the substrate for surrounding the first dammed area and establishing a second dammed area, wherein the conductive member is within the second dammed area; and filling the second dammed area with a second encapsulant, which is an electrically conductive liquid encapsulant, such that the second encapsulant encapsulates the first encapsulant and is in electrical contact with the conductive member.
Claim 2
Independent Claim 185 words
A method for making a semiconductor device comprising: providing a circuitized substrate having a first surface, an internal conductive reference plane, and a conductive member on the first surface which is electrically coupled to the reference plane; providing a semiconductor die; mounting the semiconductor die to the first surface of the substrate; providing electrical connections between the semiconductor die and the circuitized substrate; providing a first dam on the first surface of the substrate for surrounding the semiconductor die and establishing a first dammed area, wherein the conductive member is beyond the first dammed area; filling the first dammed area with a first encapsulant, which is an electrically insulative liquid encapsulant, such that the die is encapsulated; providing a second dam on the first surface of the substrate for surrounding the first dammed area and establishing a second dammed area, wherein the conductive member is within the second dammed area; and filling the second dammed area with a second encapsulant, which is an electrically conductive liquid encapsulant, such that the second encapsulant encapsulates the first encapsulant and is in electrical contact with the conductive member.
Claim 3
Dependent Claim 38 words
The method of claim 1 wherein the step of providing a circuitized substrate comprises providing a circuitized substrate having a solder resist layer formed on the first surface of the substrate and patterned to expose the conductive member.
Claim 4
Dependent Claim 33 words
The method of claim 2 wherein the step of providing a circuitized substrate comprises providing a circuitized substrate wherein the solder resist layer is absent from a majority of the first dammed area.
Claim 5
Dependent Claim 27 words
The method of claim 1 wherein the step of filling the second dammed area comprises filling the second dammed area with a resin filled with conductive particles.
Claim 6
Dependent Claim 27 words
The method of claim 4 wherein the step of filling the first dammed area comprises filling the first dammed area with a first encapsulant comprising the resin.
Claim 7
Independent Claim 173 words
A method for making a semiconductor device comprising the steps of: providing a printed circuit board substrate having a mounting surface, a substantially continuous internal reference plane, a plurality of conductive traces formed on the mounting surface, and a dedicated reference pad on the mounting surface which is electrically connected to the reference plane; providing a semiconductor die; attaching the semiconductor die to the mounting surface; electrically connecting the semiconductor die to the plurality of conductive traces; forming a first dam on the mounting surface to create a first dammed area; filling the first dammed area with an electrically insulative liquid encapsulant such that the semiconductor die is encapsulated and without encapsulating the dedicated reference pad; forming a second dam on the mounting surface to create a second dammed area for surrounding the first dammed area; and filling the second dammed area with an electrically conductive liquid encapsulant such that the electrically insulative liquid encapsulant is encapsulated and such that the dedicated reference pad is in contact with the electrically conductive liquid encapsulant.
Claim 8
Independent Claim 173 words
A method for making a semiconductor device comprising the steps of: providing a printed circuit board substrate having a mounting surface, a substantially continuous internal reference plane, a plurality of conductive traces formed on the mounting surface, and a dedicated reference pad on the mounting surface which is electrically connected to the reference plane; providing a semiconductor die; attaching the semiconductor die to the mounting surface; electrically connecting the semiconductor die to the plurality of conductive traces; forming a first dam on the mounting surface to create a first dammed area; filling the first dammed area with an electrically insulative liquid encapsulant such that the semiconductor die is encapsulated and without encapsulating the dedicated reference pad; forming a second dam on the mounting surface to create a second dammed area for surrounding the first dammed area; and filling the second dammed area with an electrically conductive liquid encapsulant such that the electrically insulative liquid encapsulant is encapsulated and such that the dedicated reference pad is in contact with the electrically conductive liquid encapsulant.
Claim 9
Dependent Claim 23 words
The method of claim 6 wherein the step of electrically connecting comprises wire bonding the semiconductor die to the plurality of conductive traces.
Claim 10
Dependent Claim 27 words
The method of claim 6 wherein the step of filling the second dammed area comprises filling the second dammed area with a resin filled with conductive particles.
Claim 11
Dependent Claim 68 words
The method of claim 8 wherein the step of filling the first dammed area comprises filling the first dammed area with a first encapsulant having a first resin precursor material, wherein the step of filling the second dammed area comprises filling the second dammed area with a second encapsulant having a second resin precursor material, and wherein the first and second precursor materials have a same base resin.
Claim 12
Dependent Claim 76 words
The method of claim 9 wherein the step of filling the first dammed area comprises filling the first dammed area with a first encapsulant having a first resin precursor material, wherein the step of filling the second dammed area comprises filling the second dammed area with a second encapsulant having a second resin precursor material, and wherein the first and second resin precursor materials are selected from a group consisting of epoxy-based resins and silicon-based resins.
Claim 13
Dependent Claim 23 words
The method of claim 6 wherein the step of providing a printed circuit board substrate comprises providing a substrate comprised of bismaleimide-triazine resin.
Claim 14
Dependent Claim 56 words
The method of claim 11 wherein the step of providing a printed circuit board substrate comprises providing a substrate having a surface opposite the mounting surface, and further comprising the step of attaching a plurality of conductive balls to the surface opposite the mounting surface which are electrically coupled to the semiconductor die through the substrate.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-07-24 1999-01-23 1999-07-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-07-24 2003-01-23 2003-07-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-07-24 2007-01-23 2007-07-25 $7700.00 Window Closed / Lapsed

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