US5433169A
Expired / Lapsed
US
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Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
Assignee: Nichia Corp
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Filing: 1994-04-06
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Granted: 1995-07-18
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Expires: 2014-04-06
Abstract
Abstract A method of depositing a gallium nitride-based III-V Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The gallium nitride-based III-V Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate, under atmospheric pressure or a higher pressure.
Inventors
- 👤 Shuji Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:31
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C30B29/406; C30B29/42
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
127 words
A method of depositing a gallium nitride-based III-V Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique, comprising the steps of: heating the substrate; supplying a reaction gas comprising a first gaseous material containing an organogallium compound, and a second gaseous material containing nitrogen, to a surface of the heated substrate in a direction parallel or oblique to said substrate; and growing the gallium nitride-based III-V Group compound semiconductor crystal layer on the heated substrate through reaction of said first gaseous material with said second gaseous material, while introducing a pressing gas substantially in a vertical direction toward said substrate to bring said reaction gas into contact with the surface of said substrate; said growing step being performed under atmospheric pressure.
Claim 2
Independent Claim
127 words
A method of depositing a gallium nitride-based III-V Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique, comprising the steps of: heating the substrate; supplying a reaction gas comprising a first gaseous material containing an organogallium compound, and a second gaseous material containing nitrogen, to a surface of the heated substrate in a direction parallel or oblique to said substrate; and growing the gallium nitride-based III-V Group compound semiconductor crystal layer on the heated substrate through reaction of said first gaseous material with said second gaseous material, while introducing a pressing gas substantially in a vertical direction toward said substrate to bring said reaction gas into contact with the surface of said substrate; said growing step being performed under atmospheric pressure.
Claim 3
Dependent Claim
24 words
The method according to claim 1, wherein said pressing gas is introduced at a flow velocity of 0.02 to 0.5 m/sec on said substrate.
Claim 4
Dependent Claim
29 words
The method according to claim 1, wherein said III-V Group compound semiconductor is represented by the formula Ga l-x-y Al x In y N, wherein 0≦x≦1, 0≦y≦1, and x+y≦l.
Claim 5
Independent Claim
141 words
A method of depositing a gallium nitride-based III-V Group compound semiconductor crystal layer on a substrate by a metalorganic vapor phase epitaxy technique, comprising the steps of: heating the substrate; supplying a reaction gas comprising a first gaseous material containing at least one Group III element, including an organogallium compound, and a second gaseous material containing nitrogen to a surface of the heated substrate in a direction parallel or oblique to said substrate; and growing the gallium nitride-based III-V Group compound semiconductor crystal layer on the heated substrate through reaction of said first gaseous material with said second gaseous material, while introducing a pressing gas containing nitrogen substantially in a vertical direction toward said substrate, bringing said reaction gas into contact with the surface of said substrate to effect said reaction on said substrate under atmospheric pressure or a higher pressure.
Claim 6
Independent Claim
141 words
A method of depositing a gallium nitride-based III-V Group compound semiconductor crystal layer on a substrate by a metalorganic vapor phase epitaxy technique, comprising the steps of: heating the substrate; supplying a reaction gas comprising a first gaseous material containing at least one Group III element, including an organogallium compound, and a second gaseous material containing nitrogen to a surface of the heated substrate in a direction parallel or oblique to said substrate; and growing the gallium nitride-based III-V Group compound semiconductor crystal layer on the heated substrate through reaction of said first gaseous material with said second gaseous material, while introducing a pressing gas containing nitrogen substantially in a vertical direction toward said substrate, bringing said reaction gas into contact with the surface of said substrate to effect said reaction on said substrate under atmospheric pressure or a higher pressure.
Claim 7
Dependent Claim
17 words
The method according to claim 4, wherein said growing step is carried out under a super-atmospheric pressure.
Claim 8
Dependent Claim
32 words
The method according to claim 5, wherein said pressing gas is introduced through a blow tube which has a blow port, and whose transverse size is increasingly enlarged toward the blow port.
Claim 9
Dependent Claim
24 words
The method according to claim 5, wherein said pressing gas is introduced at a flow velocity of 0.02 to 0.5 m/sec on said substrate.
Claim 10
Dependent Claim
19 words
The method according to claim 5, wherein said super-atmospheric pressure is achieved by the introduction of said pressing gas.
Claim 11
Dependent Claim
15 words
The method according to claim 5, wherein said first gaseous material comprises trimethylgallium or triethylgallium.
Claim 12
Dependent Claim
13 words
The method according to claim 9, wherein said second gaseous material comprises ammonia.
Claim 13
Dependent Claim
21 words
The method according to claim 10, wherein said first gaseous material further comprises trimethylaluminum, triethylaluminum, trimethylindium, triethylindium or a mixture thereof.
Claim 14
Dependent Claim
13 words
The method according to claim 5, wherein said pressing gas comprises nitrogen gas.
Claim 15
Dependent Claim
11 words
The method according to claim 5, wherein said substrate comprises sapphire.
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