Patent US5432102A successfully refreshed from Google Patents.
US5432102A
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Method of making thin film transistor with channel and drain adjacent sidewall of gate electrode
Assignee: SK Hynix Inc
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Filing: 1994-08-29
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Granted: 1995-07-11
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Expires: 2014-08-29
Abstract
Abstract A thin film transistor and a method which forms a channel region (c), a lightly doped drain region (LDD) region and, optionally, an offset region (o), in a portion of a semiconductor layer which is adjacent a sidewall of the gate electrode without the use of photo masks, thereby increasing the permissible degree of miniaturization and improving production yield.
Inventors
- 👤 Seok W. Cho
- 👤 Jong M. Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6757; H10D30/6729; H10D30/673; H10B; H10B10/00; H10B10/12; H10B10/125; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0318; H10D30/0321; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6717; H10D30/6728; H10D30/6732
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
111 words
A method for making a thin film transistor comprising the steps of: forming a gate electrode, having two sidewalls and a top surface, on a predetermined portion of a substrate; forming a sidewall spacer layer at one sidewall of the gate electrode; forming an insulating layer on the sidewall spacer layer, the top surface of the gate electrode, the other sidewall of the gate electrode which is opposite the sidewall spacer layer, and the substrate; forming a semiconductor layer on the insulating layer, the semiconductor layer having a channel region at said other sidewall of the gate electrode; and forming a source region and a drain region in the semiconductor layer.
Claim 2
Independent Claim
111 words
A method for making a thin film transistor comprising the steps of: forming a gate electrode, having two sidewalls and a top surface, on a predetermined portion of a substrate; forming a sidewall spacer layer at one sidewall of the gate electrode; forming an insulating layer on the sidewall spacer layer, the top surface of the gate electrode, the other sidewall of the gate electrode which is opposite the sidewall spacer layer, and the substrate; forming a semiconductor layer on the insulating layer, the semiconductor layer having a channel region at said other sidewall of the gate electrode; and forming a source region and a drain region in the semiconductor layer.
Claim 3
Dependent Claim
15 words
The method of claim 1, the semiconductor layer consisting essentially of polysilicon or amorphous polysilicon.
Claim 4
Dependent Claim
19 words
The method of claim 1, further including forming an LDD region between the drain region and the channel region.
Claim 5
Dependent Claim
21 words
The method of claim 1, said substrate being planar and said sidewall opposite the sidewall spacer being perpendicular the substrate surface.
Claim 6
Independent Claim
127 words
A method of making a thin film transistor comprising the steps of: forming a gate electrode, having two sidewalls and a top surface, on a predetermined portion of a substrate; forming a gate cap insulating layer, having a sidewall, on the top surface of the gate electrode; forming a sidewall spacer layer at one sidewall of the gate electrode; forming a second insulating layer on the sidewall spacer layer, the gate cap insulating layer, the other sidewall of the gate electrode which is opposite the spacer layer, and the substrate; forming a semiconductor layer on the second insulating layer, said semiconductor layer having a channel region at said other sidewall of the gate electrode; and, forming a source region and a drain region in the semiconductor layer.
Claim 7
Independent Claim
127 words
A method of making a thin film transistor comprising the steps of: forming a gate electrode, having two sidewalls and a top surface, on a predetermined portion of a substrate; forming a gate cap insulating layer, having a sidewall, on the top surface of the gate electrode; forming a sidewall spacer layer at one sidewall of the gate electrode; forming a second insulating layer on the sidewall spacer layer, the gate cap insulating layer, the other sidewall of the gate electrode which is opposite the spacer layer, and the substrate; forming a semiconductor layer on the second insulating layer, said semiconductor layer having a channel region at said other sidewall of the gate electrode; and, forming a source region and a drain region in the semiconductor layer.
Claim 8
Dependent Claim
13 words
The method of claim 5, the sidewall spacer layer being a semiconductor layer.
Claim 9
Dependent Claim
17 words
The method of claim 5, the semiconductor layer consisting essentially of a polysilicon or an amorphous silicon.
Claim 10
Dependent Claim
22 words
The method of claim 5, further including the step of forming an offset region between the drain region and the channel region.
Claim 11
Dependent Claim
25 words
The method of claim 5, said substrate being planar and said sidewall of the gate electrode opposite the sidewall spacer being perpendicular the substrate surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-10 | 1999-01-09 | 1999-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-10 | 2003-01-09 | 2003-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-10 | 2007-01-09 | 2007-07-11 | $7700.00 | Window Closed / Lapsed |