Patent US5428237A successfully refreshed from Google Patents.
US5428237A
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Semiconductor device having an insulated gate transistor
Assignee: Canon Inc
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Filing: 1993-11-29
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Granted: 1995-06-27
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Expires: 2013-11-29
Abstract
Abstract An insulated gate type transistor includes a plurality of major electrode regions, a channel region provided between the plurality of major electrode regions, a gate electrode provided on the channel region with a gate insulating film therebetween, and a semiconductor region provided in contact with the channel region, the semiconductor region having the same conductivity type as that of the channel region and a higher impurity concentration than the channel region. The gate electrode has at least two opposing portions. The plurality of major electrode regions are provided on an substrate insulating film. The transistor is activated in a state where the semiconductor region is maintained at a predetermined voltage. A semiconductor device includes a plurality of memory cells, each of which includes the aforementioned insulated gate type transistor and an electrically breakable memory element provided on one of the major electrode regions.
Inventors
- 👤 Hiroshi Yuzurihara
- 👤 Mamoru Miyawaki
- 👤 Akira Ishizaki
- 👤 Genzo Momma
- 👤 Tetsunobu Kochi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:03
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/62; H10D30/6211; G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; H10D30/01; H10D30/021; H10D30/024; H10D30/027; H10D30/0278; H10D30/601; H10D30/608; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6727; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0149; H10D84/0158; H10D84/0165; H10D84/0193; H10D84/02; H10D84/03; H10D84/038; H10B; H10B20/00; H10D86/00; H10D86/201; H10D86/215; Y; Y10; Y10S; Y10S257/00; Y10S257/901
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
128 words
An insulated gate type transistor comprising: a plurality of major electrode regions; a channel region provided between said plurality of major electrode regions; a gate electrode having at least two opposing portions and being provided for said channel region with a gate insulating film therebetween; and a semiconductor region provided in contact with said channel region at a side different from sides of the two opposing portions of said gate electrode, said semiconductor region having the same conductivity type as that of said channel region and an impurity concentration higher than that of said channel region, wherein said plurality of major electrode regions are provided on a substrate insulating film, and said transistor is activated in a state where said semiconductor region is maintained at a predetermined voltage.
Claim 2
Dependent Claim
128 words
An insulated gate type transistor comprising: a plurality of major electrode regions; a channel region provided between said plurality of major electrode regions; a gate electrode having at least two opposing portions and being provided for said channel region with a gate insulating film therebetween; and a semiconductor region provided in contact with said channel region at a side different from sides of the two opposing portions of said gate electrode, said semiconductor region having the same conductivity type as that of said channel region and an impurity concentration higher than that of said channel region, wherein said plurality of major electrode regions are provided on a substrate insulating film, and said transistor is activated in a state where said semiconductor region is maintained at a predetermined voltage.
Claim 3
Dependent Claim
145 words
A semiconductor device comprising: an insulated gate type transistor including a plurality of major electrode regions, a channel region provided between said plurality of major electrode regions, a gate electrode having at least two opposing portions and being provided for said channel region with a gate insulating film therebetween, and a semiconductor region provided in contact with said channel region at a side different from sides of the two opposing portions of said gate electrode, said semiconductor region having the same conductivity type as that of said channel region and an impurity concentration higher than that of said channel region, said plurality of major electrode regions being provided on a substrate insulating film, and said transistor being activated in a state where said semiconductor region is maintained at a predetermined voltage; and an electrically breakable memory element provided on one of said major electrode regions.
Claim 4
Dependent Claim
145 words
A semiconductor device comprising: an insulated gate type transistor including a plurality of major electrode regions, a channel region provided between said plurality of major electrode regions, a gate electrode having at least two opposing portions and being provided for said channel region with a gate insulating film therebetween, and a semiconductor region provided in contact with said channel region at a side different from sides of the two opposing portions of said gate electrode, said semiconductor region having the same conductivity type as that of said channel region and an impurity concentration higher than that of said channel region, said plurality of major electrode regions being provided on a substrate insulating film, and said transistor being activated in a state where said semiconductor region is maintained at a predetermined voltage; and an electrically breakable memory element provided on one of said major electrode regions.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 2, wherein electrical continuity is formed by breaking said memory element.
Claim 6
Dependent Claim
44 words
A semiconductor device according to claim 2, wherein said gate electrode and said semiconductor region in combination enclose at least four surfaces of said channel region which are taken in a direction in which said major electrode regions are connected to said channel region.
Claim 7
Dependent Claim
54 words
A semiconductor device according to claim 2, further comprising a second semiconductor region which is provided on the side of said channel region which is remote from said semiconductor region, said second semiconductor region having the same conductivity type as that of said channel region and a higher impurity concentration than said channel region.
Claim 8
Dependent Claim
51 words
A semiconductor device according to claim 2, further comprising a third semiconductor region which is provided between said major electrode regions and said channel region, said third semiconductor region having the same conductivity type as that of said major electrode regions and a lower impurity concentration than said major electrode regions.
Claim 9
Dependent Claim
28 words
A semiconductor device according to claim 2, further comprising an interconnection for a power source which runs in a direction of the source and drain of said transistor.
Claim 10
Dependent Claim
33 words
A semiconductor device according to claim 1, further comprising an interconnection for a power source which is disposed in a direction which crosses a direction of the source and drain of said transistor.
Claim 11
Dependent Claim
169 words
A semiconductor device comprising: a plurality of insulated gate type transistors each of which includes a source region and a drain region, a channel region provided between said source region and said drain region, a gate electrode having at least two opposing portions and being provided for said channel region with a gate insulator provided therebetween, and a semiconductor region provided in contact with said channel region at a side different from sides of the two opposing portions of said gate electrode, said semiconductor region having the same conductivity type as that of said channel region and an impurity concentration higher than that of the channel region, said source and said drain regions being provided on an insulating layer, and said transistor being activated in a state where said semiconductor region is maintained at a predetermined voltage; and a memory element, which can be broken electrically, provided on said source region of each of said plurality of transistors, wherein said drain region is common to said plurality of transistors.
Claim 12
Dependent Claim
169 words
A semiconductor device comprising: a plurality of insulated gate type transistors each of which includes a source region and a drain region, a channel region provided between said source region and said drain region, a gate electrode having at least two opposing portions and being provided for said channel region with a gate insulator provided therebetween, and a semiconductor region provided in contact with said channel region at a side different from sides of the two opposing portions of said gate electrode, said semiconductor region having the same conductivity type as that of said channel region and an impurity concentration higher than that of the channel region, said source and said drain regions being provided on an insulating layer, and said transistor being activated in a state where said semiconductor region is maintained at a predetermined voltage; and a memory element, which can be broken electrically, provided on said source region of each of said plurality of transistors, wherein said drain region is common to said plurality of transistors.
Claim 13
Dependent Claim
195 words
A semiconductor device comprising: a transistor including a first major electrode region, a second major electrode region, and a third major electrode region; a first channel region provided between said first and second major electrode regions, and a second channel region provided between said second and third major electrode regions; a first gate electrode provided for said first channel region with a first gate insulating film provided therebetween, and a second gate electrode provided for said second channel region with a second gate insulating film provided therebetween, each of said first and second gate electrodes having opposing portions which sandwich said first and second channel regions, respectively; and said first, second and third major electrode regions and said first and second channel regions being formed on a semiconductor island region provided on a surface of a semiconductor substrate, said semiconductor island region having the same conductivity type as said first and second channel regions and an impurity concentration higher than that of said first and second channel regions, and being formed at a side of such first and second channel regions different from sides of the opposing portions of said first and second gate electrodes.
Claim 14
Dependent Claim
195 words
A semiconductor device comprising: a transistor including a first major electrode region, a second major electrode region, and a third major electrode region; a first channel region provided between said first and second major electrode regions, and a second channel region provided between said second and third major electrode regions; a first gate electrode provided for said first channel region with a first gate insulating film provided therebetween, and a second gate electrode provided for said second channel region with a second gate insulating film provided therebetween, each of said first and second gate electrodes having opposing portions which sandwich said first and second channel regions, respectively; and said first, second and third major electrode regions and said first and second channel regions being formed on a semiconductor island region provided on a surface of a semiconductor substrate, said semiconductor island region having the same conductivity type as said first and second channel regions and an impurity concentration higher than that of said first and second channel regions, and being formed at a side of such first and second channel regions different from sides of the opposing portions of said first and second gate electrodes.
Claim 15
Dependent Claim
97 words
A semiconductor device according to claim 10, wherein said transistor includes a plurality of transistors which are provided in a matrix and which have a first row line for connecting said first gate electrodes on a predetermined row with each other, a second row line for connecting said second gate electrodes on a predetermined row with each other, a first column line for connecting said second major electrode regions on a predetermined column with each other, and a second column line for connecting said first and third major electrode regions on a predetermined column with each other.
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