US4571609A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stacked MOS device with means to prevent substrate floating
Assignee: Toshiba Corp
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Filing: 1984-04-03
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Granted: 1986-02-18
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Expires: 2004-04-03
Abstract
Abstract An MOS type semiconductor device having a semiconductor substrate, an insulating layer formed in or on said semiconductor substrate, and an MOS transistor formed on said insulating layer, characterized in that said insulating layer is formed at a region below said MOS transistor excluding at least part of the region below a channel region of said MOS transistor.
Inventors
- 👤 Hiroshi Hatano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:54
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0278; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10D86/00; H10D86/201; H10D88/00; H10D88/01; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10D84/8311; H10D84/8312; H10D84/83138; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S257/00; Y10S257/901
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
150 words
An MOS type semiconductor device comprising: a. a semiconductor substrate of a first conducting type; b. a first MOS transistor formed on a portion of said semiconductor substrate; c. an insulating layer formed on said first MOS transistor and on a portion of said substrate, said insulating layer having an opening to said substrate; and d. a second MOS transistor formed on said insulating layer at least in part over said first MOS transistor, said second MOS transistor comprising a source region of a second conductivity type completely separated from said substrate by said insulating layer, a drain region of said second conductivity type spaced from said source region and completely separated from said substrate by said insulating layer, and a channel region of said first conductivity type located between said source and drain regions and over said opening in said insulating layer and contacting said substrate through said opening.
Claim 2
Dependent Claim
150 words
An MOS type semiconductor device comprising: a. a semiconductor substrate of a first conducting type; b. a first MOS transistor formed on a portion of said semiconductor substrate; c. an insulating layer formed on said first MOS transistor and on a portion of said substrate, said insulating layer having an opening to said substrate; and d. a second MOS transistor formed on said insulating layer at least in part over said first MOS transistor, said second MOS transistor comprising a source region of a second conductivity type completely separated from said substrate by said insulating layer, a drain region of said second conductivity type spaced from said source region and completely separated from said substrate by said insulating layer, and a channel region of said first conductivity type located between said source and drain regions and over said opening in said insulating layer and contacting said substrate through said opening.
References Cited (Backward Citations)
US3600651A
Cited
CA930477A
Cited
US4163245A
Cited
US4251828A
Cited
US4241359A
Cited
US4326213A
Cited
JPS5518052A
Cited
JPS5543872A
Cited
JPS5574172A
Cited
JPS55105361A
Cited
US4272880A
Cited
US4472729A
Cited
US4487635A
Cited
US4476475A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-02-17 | 1989-08-19 | 1990-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-02-17 | 1993-08-19 | 1994-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-02-17 | 1997-08-19 | 1998-02-18 | $7700.00 | Window Closed / Lapsed |