US5428236A
Expired / Lapsed
US
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Semiconductor memory device having trenched capicitor
Assignee: Toshiba Corp
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Filing: 1992-03-26
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Granted: 1995-06-27
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Expires: 2012-03-26
Abstract
Abstract Disclosed is a memory having a p-type semiconductor substrate having a high impurity concentration a p-type semiconductor layer is formed on thereof; a groove which is formed so as to extend from a surface of the semiconductor layer to a position inside the semiconductor substrate; an impurity diffused region which is formed on portions of the semiconductor layer and the semiconductor substrate which define the groove; and an electrode which is formed from the groove to level at least above an opening of the groove through capacitor insulation film, the impurity diffused region, capacitor insulation film and electrode constituting trenched capacitor in which the electrode serves first capacitor electrode and the impurity diffused region serves as a second capacitor electrode.
Inventors
- 👤 Yukimasa Uchida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:24
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
365 words
A dynamic semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type having a major surface; a pair of transfer transistors formed in said semiconductor substrate, each transfer transistor having source and drain regions of a second conductivity type; a pair of adjacent trenched capacitors associated with said pair of transfer transistors, each trenched capacitor having a trench formed in said semiconductor substrate extending depthwise from the major surface thereof to a position inside said semiconductor substrate and including: a first semiconductor region of the second conductivity type formed in said semiconductor substrate, said first semiconductor region having an impurity concentration less than that of the source and drain regions, defining said trench and forming a first electrode of said trenched capacitor, said first electrode having a first portion disposed between the adjacent trenched capacitors and a second portion extending along the major surface of the substrate in a direction opposite that of the other trenched capacitor and being connected to one of the source and drain regions of a respective one of the pair of transfer transistors; a second semiconductor region of said first conductivity type formed in said semiconductor substrate, said second semiconductor region having an impurity concentration higher than that of said semiconductor substrate, said second semiconductor region surrounding the first and second portions of said first semiconductor region; an insulation film formed on the surface of each trench and acting as a dielectric of each trenched capacitor; a conductive filling in the trench forming the other electrode of the trenched capacitor and forming a first capacitance with said first semiconductor region; and a second capacitor having a first electrode and a second electrode, the first semiconductor region forming the first electrode of the second capacitor, the second semiconductor region forming the second electrode of the second capacitor and forming a junction capacitance with the first semiconductor region, and the one of the source and drain regions of the respective transfer transistor forming a node connected to the first electrode of the trenched capacitor and the first electrode of the second capacitor; wherein said second semiconductor regions of the trenched capacitors overlap at a superposed portion between the trenched capacitors.
Claim 2
Dependent Claim
365 words
A dynamic semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type having a major surface; a pair of transfer transistors formed in said semiconductor substrate, each transfer transistor having source and drain regions of a second conductivity type; a pair of adjacent trenched capacitors associated with said pair of transfer transistors, each trenched capacitor having a trench formed in said semiconductor substrate extending depthwise from the major surface thereof to a position inside said semiconductor substrate and including: a first semiconductor region of the second conductivity type formed in said semiconductor substrate, said first semiconductor region having an impurity concentration less than that of the source and drain regions, defining said trench and forming a first electrode of said trenched capacitor, said first electrode having a first portion disposed between the adjacent trenched capacitors and a second portion extending along the major surface of the substrate in a direction opposite that of the other trenched capacitor and being connected to one of the source and drain regions of a respective one of the pair of transfer transistors; a second semiconductor region of said first conductivity type formed in said semiconductor substrate, said second semiconductor region having an impurity concentration higher than that of said semiconductor substrate, said second semiconductor region surrounding the first and second portions of said first semiconductor region; an insulation film formed on the surface of each trench and acting as a dielectric of each trenched capacitor; a conductive filling in the trench forming the other electrode of the trenched capacitor and forming a first capacitance with said first semiconductor region; and a second capacitor having a first electrode and a second electrode, the first semiconductor region forming the first electrode of the second capacitor, the second semiconductor region forming the second electrode of the second capacitor and forming a junction capacitance with the first semiconductor region, and the one of the source and drain regions of the respective transfer transistor forming a node connected to the first electrode of the trenched capacitor and the first electrode of the second capacitor; wherein said second semiconductor regions of the trenched capacitors overlap at a superposed portion between the trenched capacitors.
Claim 3
Dependent Claim
381 words
A dynamic semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type including a well region of a second conductivity type formed therein and defining a major surface; a pair of transfer transistors formed in said well region, each transfer transistor having source and drain regions of the first conductivity type; a pair of adjacent trenched capacitors associated with said pair of transfer transistors, each trenched capacitor having a trench formed in said well region and said semiconductor substrate extending depthwise from the major surface to a position inside said semiconductor substrate and including: a first semiconductor region of the first conductivity type formed in said well region and said semiconductor substrate, said first semiconductor region having an impurity concentration less than that of the source and drain regions, defining said trench and forming a first electrode of said trenched capacitor, said first electrode having a first portion disposed between the adjacent trenched capacitors and a second portion extending along the major surface in a direction opposite that of the other trenched capacitor and being connected to one of the source and drain regions of a respective one of the pair of transfer transistors; a second semiconductor region of said second conductivity type formed in said semiconductor substrate, said second semiconductor region having an impurity concentration higher than that of said well region, said second semiconductor region surrounding the first and second portions of said first semiconductor region; an insulation film formed on the surface of each trench and acting as a dielectric of each trenched capacitor; a conductive filling in the trench forming the other electrode of the trenched capacitor and forming a first capacitance with said first semiconductor region; and a second capacitor having a first electrode and a second electrode, the first semiconductor region forming the first electrode of the second capacitor, the second semiconductor region forming the second electrode of the second capacitor and forming a junction capacitance with the first semiconductor region, and the one of the source and drain regions of the respective transfer transistor forming a node connected to the first electrode of the trenched capacitor and the first electrode of the second capacitor; wherein said second semiconductor regions of the trenched capacitors overlap at a superposed portion between the trenched capacitors.
Claim 4
Dependent Claim
381 words
A dynamic semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type including a well region of a second conductivity type formed therein and defining a major surface; a pair of transfer transistors formed in said well region, each transfer transistor having source and drain regions of the first conductivity type; a pair of adjacent trenched capacitors associated with said pair of transfer transistors, each trenched capacitor having a trench formed in said well region and said semiconductor substrate extending depthwise from the major surface to a position inside said semiconductor substrate and including: a first semiconductor region of the first conductivity type formed in said well region and said semiconductor substrate, said first semiconductor region having an impurity concentration less than that of the source and drain regions, defining said trench and forming a first electrode of said trenched capacitor, said first electrode having a first portion disposed between the adjacent trenched capacitors and a second portion extending along the major surface in a direction opposite that of the other trenched capacitor and being connected to one of the source and drain regions of a respective one of the pair of transfer transistors; a second semiconductor region of said second conductivity type formed in said semiconductor substrate, said second semiconductor region having an impurity concentration higher than that of said well region, said second semiconductor region surrounding the first and second portions of said first semiconductor region; an insulation film formed on the surface of each trench and acting as a dielectric of each trenched capacitor; a conductive filling in the trench forming the other electrode of the trenched capacitor and forming a first capacitance with said first semiconductor region; and a second capacitor having a first electrode and a second electrode, the first semiconductor region forming the first electrode of the second capacitor, the second semiconductor region forming the second electrode of the second capacitor and forming a junction capacitance with the first semiconductor region, and the one of the source and drain regions of the respective transfer transistor forming a node connected to the first electrode of the trenched capacitor and the first electrode of the second capacitor; wherein said second semiconductor regions of the trenched capacitors overlap at a superposed portion between the trenched capacitors.
Claim 5
Dependent Claim
25 words
A semiconductor memory device according to claim 1, wherein said first semiconductor regions have an impurity concentration higher than that of said second semiconductor regions.
Claim 6
Dependent Claim
50 words
A semiconductor memory device according to claim 1, wherein each transfer transistor has source and drain regions and a gate, one of said source and drain regions being connected to said first semiconductor region and the other to a bit line, and said gate being connected to a predetermined potential.
Claim 7
Dependent Claim
50 words
A semiconductor memory device according to claim 2, wherein each transfer transistor has drain and source regions and a gate, one of said source and drain regions being connected to said first semiconductor region and the other to a bit line, and said gate being connected to a predetermined potential.
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