US5427982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1994-08-02
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Granted: 1995-06-27
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Expires: 2014-08-02
Abstract
Abstract A method for the fabrication of semiconductor device includes the steps of forming a first wiring layer on an insulating film overlaying a semiconductor substrate, depositing an interlayer insulating film entirely on the first wiring layer, etching the interlayer insulating film selectively to form a contact hole exposing the first wiring layer therethrough, forming a metal film on the interlayer insulating film and in the contact hole, etching the metal film selectively to leave the metal film only around the contact hole, depositing a mid-insulating film on the remaining metal film and on the interlayer insulating film applying annealing to the metal film to form a metal plug in the contact hole, the metal film filling the contact hole, removing the mid-insulating film and forming a second wiring layer on the interlayer insulating film and on the metal plug.
Inventors
- 👤 Young K. Jun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; H10W20/069; H10W20/071; H10W20/081; H10W20/082; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
145 words
A method for fabricating a semiconductor device, the method comprising the steps of: providing an insulating film over a semiconductor substrate; forming a first wiring layer on the insulating film; depositing an interlayer insulating film on the entirety of said first wiring layer; etching said interlayer insulating film selectively to form a contact hole exposing said first wiring layer therethrough; forming a metal film on said interlayer insulating film and in said contact hole; etching said metal film selectively so that said metal film remains only around said contact hole; depositing a mid-insulating film on said remaining metal film and on said interlayer insulating film; annealing said metal film to form a metal plug in said contact hole, said metal film filling said contact hole; removing said mid-insulating film; and forming a second wiring layer on said interlayer insulating film and on said metal plug.
Claim 2
Independent Claim
145 words
A method for fabricating a semiconductor device, the method comprising the steps of: providing an insulating film over a semiconductor substrate; forming a first wiring layer on the insulating film; depositing an interlayer insulating film on the entirety of said first wiring layer; etching said interlayer insulating film selectively to form a contact hole exposing said first wiring layer therethrough; forming a metal film on said interlayer insulating film and in said contact hole; etching said metal film selectively so that said metal film remains only around said contact hole; depositing a mid-insulating film on said remaining metal film and on said interlayer insulating film; annealing said metal film to form a metal plug in said contact hole, said metal film filling said contact hole; removing said mid-insulating film; and forming a second wiring layer on said interlayer insulating film and on said metal plug.
Claim 3
Dependent Claim
29 words
A method according to claim 1, wherein said contact hole is formed having an upper portion and a lower portion, said upper portion being wider than the lower portion.
Claim 4
Dependent Claim
59 words
A method according to claim 1, wherein said step of etching said interlayer insulating film comprises the steps of: forming a photosensitive film on said interlayer insulating film; selectively exposing and developing said photosensitive film to form a photosensitive pattern; applying anisotropic etching and isotropic etching to said interlayer insulating film, said photosensitive film pattern serving as a mask.
Claim 5
Dependent Claim
23 words
A method according to claim 1, wherein said metal film is formed with one of an Al film and an Al alloy film.
Claim 6
Dependent Claim
41 words
A method according to claim 1, wherein said metal film remaining around said contact hole is formed having a thickness and a volume, the volume being the same as or larger than that of an internal space of said contact hole.
Claim 7
Dependent Claim
14 words
A method according to claim 1, wherein said mid-insulating film is a nitride film.
Claim 8
Dependent Claim
44 words
A method according to claim 1, wherein said annealing is carried out at a temperature in the range of approximately 350° C. to 600° C. for a duration of approximately 1 to 30 minutes under an ambient inert gas or an ambient reductive gas.
Claim 9
Dependent Claim
30 words
A method according to claim 1, wherein said step of annealing causes said metal film to flow into an internal space of said contact hole to form said metal plug.
Claim 10
Dependent Claim
37 words
A method according to claim 1, further comprising the step of forming a second insulating film for planarizing stepped parts caused by the formation of said first wiring layer before the deposition of said interlayer insulating film.
Claim 11
Dependent Claim
19 words
A method according to claim 9, wherein said second insulating film is formed with spin on glass or polyimide.
Claim 12
Dependent Claim
40 words
A method according to claim 1, further comprising the steps of: forming a second insulating film for planarizing stepped parts caused by said first wiring layer before said interlayer insulating film; and applying etch back to said second insulating film.
Claim 13
Dependent Claim
19 words
A method according to claim 11, wherein said second insulating film is formed with spin on glass or polyimide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-26 | 1998-12-26 | 1999-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-26 | 2002-12-26 | 2003-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-26 | 2006-12-26 | 2007-06-27 | $7700.00 | Window Closed / Lapsed |