US5424581A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Crater prevention technique for semiconductor processing
Assignee: National Semiconductor Corp
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Filing: 1994-07-19
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Granted: 1995-06-13
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Expires: 2014-07-19
Abstract
Abstract A semiconductor bond pad prevents cratering by including an etch stop layer which is formed between the field oxide layer and the first dielectric layer to prevent erosion of the field oxide while allowing etching and removal of the first dielectric layer to prevent cratering.
Inventors
- 👤 Haden J. Bourg, Jr
- 👤 Jim A. McNelis
- 👤 Peter Weiler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:10
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W72/00; H10W72/01; H10W72/019; H10W74/00; H10W74/10; H10W74/131; H10W74/147; H10W72/50; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/931; H10W72/934; H10W72/941; H10W72/9415; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
95 words
A structure comprising: a substrate; a field oxide layer on said substrate; an etch stop layer formed over said field oxide layer at a bond pad location, said etch stop layer comprising nitride; a first polycrystalline silicon layer formed over only the periphery of said etch stop layer at said bond pad location and extending above said field oxide layer adjacent said bond pad location; and a first metal layer formed over said etch stop layer over said field oxide layer at said bond pad location and in contact with said first polycrystalline silicon layer.
Claim 2
Dependent Claim
95 words
A structure comprising: a substrate; a field oxide layer on said substrate; an etch stop layer formed over said field oxide layer at a bond pad location, said etch stop layer comprising nitride; a first polycrystalline silicon layer formed over only the periphery of said etch stop layer at said bond pad location and extending above said field oxide layer adjacent said bond pad location; and a first metal layer formed over said etch stop layer over said field oxide layer at said bond pad location and in contact with said first polycrystalline silicon layer.
Claim 3
Dependent Claim
19 words
A structure as in claim 1 further comprising at least one additional metal layer over said first metal layer.
Claim 4
Dependent Claim
15 words
A structure as in claim 2 further comprising a passivation layer over said metal layers.
Claim 5
Dependent Claim
24 words
A structure as in claim 1 wherein said first polycrystalline silicon layer is also in contact with a sidewall of said etch stop layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-12 | 1998-12-12 | 1999-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-12 | 2002-12-12 | 2003-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-12 | 2006-12-12 | 2007-06-13 | $7700.00 | Window Closed / Lapsed |