Semiconductor device

Abstract

Abstract PURPOSE:To improve the bonding performance by a method wherein a polysilicon film is provided under an Al film at the part for a bonding pad and an area where the Al film comes into contact with a silicon dioxide film containing phosphorus is reduced. CONSTITUTION:On the surface of a field oxide film 2 which is formed on a silicon substrate 1, a gate of an internal wiring pattern constituting a semiconductor device and, at the same time, a polysilicon film 3 are formed and, on this polysilicon film 3, a silicon dioxide (PSG) film 4 containing phosphorus is formed. After only the part for the bonding pad has been removed by etching, an opening 4a is made and the PSG film 4 including this opening is coated with an Al film 5. Then, after a prescribed pattern has been formed, the circumference part of the Al film 5 is coated with an insulating protective film 6 so that the Al film 5 can be constituted as a bonding pad. Through this constitution, an area where the Al film 5 comes into contact with the PSG film 4 can be reduced and it is possible to prevent a decline in the bonding performance at the initial stage under the influence of the phosphorus contained in the PSG film 5.

Inventors

• 👤 Hiroshi Kawashita
• 👤 川下　浩
• 👤 Koichi Nakagawa
• 👤 中川　興一
• 👤 Ko Shimomura
• 👤 興 下村

Bibliographic Details