Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
232 words
A method for manufacturing MOS semiconductor devices which comprises the steps of: forming an oxidation resistant film on the upper and side surfaces of a gate electrode which is formed on a semiconductor substrate via an oxide film and whose upper and side surfaces are coated with an insulation oxide film; effecting thermal oxidation with said oxidation resistant film as a mask; removing said oxidation resistant film and part of said oxide film lying directly under said oxidation resistant film to selectively expose the surface of said semiconductor substrate; doping impurity into the exposed surface area of said semiconductor substrate to form impurity regions serving as source and drain regions; forming a semiconductor layer on the exposed surface of said semiconductor substrate by a growth process; forming a first refractory metal layer on the entire surface of the semiconductor structure; forming an insulation film on said first refractory metal layer; selectively removing said insulation film to form at least one contact hole; forming a second refractory metal layer in said contact hole by a deposition process; removing said insulation film and said first refractory metal layer except that part thereof which lies directly under said second refractory metal layer; and depositing an interlayer insulation film on the entire surface of the semiconductor structure, and planarizing the surface of said interlayer insulation film to expose the surface of said second refractory metal layer.
Claim 2
Independent Claim
232 words
A method for manufacturing MOS semiconductor devices which comprises the steps of: forming an oxidation resistant film on the upper and side surfaces of a gate electrode which is formed on a semiconductor substrate via an oxide film and whose upper and side surfaces are coated with an insulation oxide film; effecting thermal oxidation with said oxidation resistant film as a mask; removing said oxidation resistant film and part of said oxide film lying directly under said oxidation resistant film to selectively expose the surface of said semiconductor substrate; doping impurity into the exposed surface area of said semiconductor substrate to form impurity regions serving as source and drain regions; forming a semiconductor layer on the exposed surface of said semiconductor substrate by a growth process; forming a first refractory metal layer on the entire surface of the semiconductor structure; forming an insulation film on said first refractory metal layer; selectively removing said insulation film to form at least one contact hole; forming a second refractory metal layer in said contact hole by a deposition process; removing said insulation film and said first refractory metal layer except that part thereof which lies directly under said second refractory metal layer; and depositing an interlayer insulation film on the entire surface of the semiconductor structure, and planarizing the surface of said interlayer insulation film to expose the surface of said second refractory metal layer.
Claim 3
Independent Claim
30 words
A method for manufacturing MOS semiconductor devices according to clam 1, wherein the step of forming said semiconductor region is effected prior to the step of forming said semiconductor layer.
Claim 4
Independent Claim
30 words
A method for manufacturing MOS semiconductor devices according to clam 1, wherein the step of forming said semiconductor region is effected prior to the step of forming said semiconductor layer.
Claim 5
Dependent Claim
29 words
A method for manufacturing MOS semiconductor devices according to claim 1, wherein the step of forming said semiconductor region is effected after the step of forming said semiconductor layer.
Claim 6
Dependent Claim
32 words
A method for manufacturing MOS semiconductor devices according to claim 1, wherein said first refractory metal layer is formed of a laminated structure of a titanium layer and a titanium nitride layer.
Claim 7
Dependent Claim
23 words
A method for manufacturing MOS semiconductor devices according to claim 1, wherein said second refractory metal layer is formed of a tungsten layer.
Claim 8
Dependent Claim
28 words
A method for manufacturing MOS semiconductor devices according to claim 1, wherein said semiconductor layer is a silicon layer which is formed by a selective epitaxial growth method.