EP0395072A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Bonding pad used in semiconductor device
Assignee: Toshiba Corp
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Filing: 1990-04-26
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Granted: —
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Expires: 2010-04-26
Abstract
Abstract A polysilicon film (103) is formed on an Si substrate (101) through an insulating oxide film (102), and a composite film (104) constituted by oxide and nitride films is formed on the polysilicon film (103). A polycide layer (105) is formed on the composite film (104), and a metal electrode layer (110) serving as a bonding pad (108) is formed on the polycide layer (105) through a barrier metal layer (109).
Inventors
- 👤 Seiichi C/O Intellectual Property Div. Mori
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 12:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W72/00; H10W72/50; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5524; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
77 words
A semiconductor device characterized by comprising: a semiconductor substrate (101); a polysilicon film (103) formed on said semiconductor substrate (101) through an insulating layer (102), a buffer layer (104, 105) formed on said polysilicon film (103), said buffer layer (104, 105) including a composite film (104) constituted by oxide and nitride films, and a metal electrode layer (110) formed on said buffer layer (104, 105), said metal electrode layer (110) being used as a bonding pad (108).
Claim 2
Dependent Claim
77 words
A semiconductor device characterized by comprising: a semiconductor substrate (101); a polysilicon film (103) formed on said semiconductor substrate (101) through an insulating layer (102), a buffer layer (104, 105) formed on said polysilicon film (103), said buffer layer (104, 105) including a composite film (104) constituted by oxide and nitride films, and a metal electrode layer (110) formed on said buffer layer (104, 105), said metal electrode layer (110) being used as a bonding pad (108).
Claim 3
Dependent Claim
24 words
A device according to claim 1, characterized in that said buffer layer (104, 105) includes a polycide layer (105) formed on said composite film.
Claim 4
Dependent Claim
29 words
A device according to claim 2, characterized in that said polycide layer (105) comprises: a polysilicon layer (105A); and an MoSi layer (105B) formed on said polysilicon layer (105A).
Claim 5
Dependent Claim
49 words
A device according to claim 1 characterized in that said buffer layer (104, 105) includes a polycide layer (105) formed on said composite film (104), said metal electrode layer (110) includes a barrier metal layer (109), and said barrier metal layer (109) is formed on said polycide layer (105).
Claim 6
Dependent Claim
96 words
A semiconductor device characterized by comprising: a semiconductor substrate (101); a composite film (104) formed on said semiconductor substrate (101), said composite film (104) being constituted by oxide and nitride films; a buffer layer (105) formed on said composite film (104), said buffer layer being constituted by at least one of a polysilicon film, a refractory metal layer, and a refractory metal silicide layer; an interlevel insulator (106) formed on the resultant structure; and a metal electrode layer (108) formed on said interlevel insulator (106), said metal electrode layer (108) being used as a bonding pad.
Claim 7
Dependent Claim
96 words
A semiconductor device characterized by comprising: a semiconductor substrate (101); a composite film (104) formed on said semiconductor substrate (101), said composite film (104) being constituted by oxide and nitride films; a buffer layer (105) formed on said composite film (104), said buffer layer being constituted by at least one of a polysilicon film, a refractory metal layer, and a refractory metal silicide layer; an interlevel insulator (106) formed on the resultant structure; and a metal electrode layer (108) formed on said interlevel insulator (106), said metal electrode layer (108) being used as a bonding pad.
Claim 8
Dependent Claim
39 words
A device according to claim 5, characterized in that a polysilicon layer is formed on said interlevel insulator (106), said metal electrode layer includes a barrier metal layer, and said barrier metal layer is formed on said polysilicon layer.
Claim 9
Dependent Claim
17 words
A device according to claim 5, characterized in that said refractory metal layer comprises an MoSi layer.
References Cited (Backward Citations)
No citation records indexed.
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