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US5422500A
Expired / Lapsed
US
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Ohmic contact electrodes for N-type semiconductor cubic boron nitride
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1993-05-13
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Granted: 1995-06-06
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Expires: 2013-05-13
Abstract
Abstract An ohmic contact electrode formed on an n-type semiconductor cubic boron nitride by using a IVa metal or an alloy with a IVa metal or a layer of Au or Ag.
Inventors
- 👤 Tadashi Tomikawa
- 👤 Tunenobu Kimoto
- 👤 Nobuhiko Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:40
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; Y; Y10; Y10S; Y10S438/00; Y10S438/932
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
35 words
An ohmic contact electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of a IVa metal and an alloy with a IVa metal.
Claim 2
Dependent Claim
35 words
An ohmic contact electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of a IVa metal and an alloy with a IVa metal.
Claim 3
Dependent Claim
65 words
An ohmic contact electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of Ti, TiAl, TiB 2 , TiC, TiCr, TiFe, TiN, TiNb, TiNi, TiSi, Zr, ZrAl, ZrB 2 , ZrC, ZrN, ZrNb, ZrNi, ZrS 2 , ZrSi 2 , Hf, HfB 2 , HfC, HfN, HfS 2 , and HfSi 2 .
Claim 4
Dependent Claim
65 words
An ohmic contact electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of Ti, TiAl, TiB 2 , TiC, TiCr, TiFe, TiN, TiNb, TiNi, TiSi, Zr, ZrAl, ZrB 2 , ZrC, ZrN, ZrNb, ZrNi, ZrS 2 , ZrSi 2 , Hf, HfB 2 , HfC, HfN, HfS 2 , and HfSi 2 .
Claim 5
Dependent Claim
28 words
An ohmic contact electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a metal selected from the group consisting of Au and Ag.
Claim 6
Dependent Claim
28 words
An ohmic contact electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a metal selected from the group consisting of Au and Ag.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-05 | 1998-12-05 | 1999-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-05 | 2002-12-05 | 2003-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-05 | 2006-12-05 | 2007-06-06 | $7700.00 | Window Closed / Lapsed |