US5285109A
Expired / Lapsed
US
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Ohmic contact electrodes for n-type semiconductor cubic boron nitride
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-05-24
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Granted: 1994-02-08
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Expires: 2011-05-24
Abstract
Abstract An ohmic contact electrode formed on an n-type semiconductor cubic boron nitride by using a IVa metal; an alloy with a IVa metal; a metal with Si or S; an alloy with Si or S; a metal with B, Al, Ga, or In; an alloy with B, Al, Ga, or In; a Va metal; or an alloy with a Va metal.
Inventors
- 👤 Tadashi Tomikawa
- 👤 Tunenobu Kimoto
- 👤 Nobuhiko Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:56
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; Y; Y10; Y10S; Y10S438/00; Y10S438/932
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
55 words
An ohmic electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of CrSi, WrSi, MnSi, CoSi, NiSi, PtSi, AgSi, ZnSi, WCSi, MnZnSi, Ni 2 BSi, PtPdSi, AgAlSi, CrS, WrS, MnS, CoS, NiS, PtS, AgS, ZnS, WCS, MnZnS, Ni 2 BS, PtPds, and AgAlS.
Claim 2
Dependent Claim
55 words
An ohmic electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of CrSi, WrSi, MnSi, CoSi, NiSi, PtSi, AgSi, ZnSi, WCSi, MnZnSi, Ni 2 BSi, PtPdSi, AgAlSi, CrS, WrS, MnS, CoS, NiS, PtS, AgS, ZnS, WCS, MnZnS, Ni 2 BS, PtPds, and AgAlS.
Claim 3
Dependent Claim
22 words
An ohmic contact electrode according to claim 1 wherein said at least one layer is approximately 1% Si or S by weight.
Claim 4
Dependent Claim
98 words
An ohmic electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of B, AlB 2 , CrB 2 , SiB 4 , WB, Al, AlCu, AlSi, Ga, GaIn, GaSn, GaZn, In, InMg, InSn, V, VB 2 , VC, V 3 Co, V 3 Ga, VN, VS, V 3 Si, V 2 Zr, Nb, NbB 2 , NbC, Nb 3 Ga, Nb 3 Ge, NbN, NbS 2 , NbSi 2 , Ta, TaB 2 , TaC, TaN, TaS 2 , TaSi 2 , and HfSi 2 .
Claim 5
Dependent Claim
98 words
An ohmic electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of B, AlB 2 , CrB 2 , SiB 4 , WB, Al, AlCu, AlSi, Ga, GaIn, GaSn, GaZn, In, InMg, InSn, V, VB 2 , VC, V 3 Co, V 3 Ga, VN, VS, V 3 Si, V 2 Zr, Nb, NbB 2 , NbC, Nb 3 Ga, Nb 3 Ge, NbN, NbS 2 , NbSi 2 , Ta, TaB 2 , TaC, TaN, TaS 2 , TaSi 2 , and HfSi 2 .
Claim 6
Dependent Claim
78 words
An ohmic contact electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of V, VB 2 , VC, V 3 Co, V 3 Ga, VN, VS, V 3 Si, V 2 Zr, Nb, NbB 2 , NbC, Nb 3 Ga, Nb 3 Ge, NbN, NbS 2 , NbSi 2 , Ta, TaB 2 , TaC, TaN, TaS 2 , TaSi 2 , and HfSi 2 .
Claim 7
Dependent Claim
78 words
An ohmic contact electrode for an n-type semiconductor cubic boron nitride comprising at least one layer of a material selected from the group consisting of V, VB 2 , VC, V 3 Co, V 3 Ga, VN, VS, V 3 Si, V 2 Zr, Nb, NbB 2 , NbC, Nb 3 Ga, Nb 3 Ge, NbN, NbS 2 , NbSi 2 , Ta, TaB 2 , TaC, TaN, TaS 2 , TaSi 2 , and HfSi 2 .
References Cited (Backward Citations)
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