Abstract The fabrication and use of corrosion resistant Cu/Cu(x)Ge(y) alloy or Cu/Cu3Ge phase bilayer interconnect metal lines is disclosed. A solid state, selective process of forming a Cu3Ge phase or Cu(x)Ge(y) alloy by reacting GeH4 gas with Cu surface at low pressure in CVD reactor at temperatures of 200 DEG -450 DEG C. is described. Corrosion resistant semiconductor devices and packaging interconnects where corrosion of copper interconnects was a problem, is now made possible by the Cu/Cu3Ge phase or CuxGey alloy bilayer of the present invention. A structure where copper vias are completely or partially converted to Cu3Ge or CuxGey is presented. Also, dissimilar metals like Al-Cu can be connected by Cu3Ge phase or CuxGey alloy filled vias to improve electromigration performance.
A method of producing a corrosion resistant conductor, comprising the step of forming a layer of copper-germanium alloy over a copper surface including reacting said copper surface with a germanium containing gas source at a low partial pressure of 0.5 to 1.0 Torr in a chemical vapor deposition reactor at about 200°-450° C. so that a bilayer of Cu/Cu(x)Ge(y) alloy is formed, wherein x and y are atomic percentages x+y=100% and 5%<y<75% .
Claim 2
Independent Claim
73 words
A method of producing a corrosion resistant conductor, comprising the step of forming a layer of copper-germanium alloy over a copper surface including reacting said copper surface with a germanium containing gas source at a low partial pressure of 0.5 to 1.0 Torr in a chemical vapor deposition reactor at about 200°-450° C. so that a bilayer of Cu/Cu(x)Ge(y) alloy is formed, wherein x and y are atomic percentages x+y=100% and 5%<y<75% .
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein said germanium containing gas source is selected from the group consisting of GeH 4 and Ge 2 H 6 .