US5411916A
Expired / Lapsed
US
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Method for patterning wirings of semiconductor integrated circuit device
Assignee: Toshiba Corp
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Filing: 1993-06-18
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Granted: 1995-05-02
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Expires: 2013-06-18
Abstract
Abstract As shown in FIG. 4, a wiring pattern of a semiconductor integrated circuit device of the present invention comprises a wiring portion extending from a connection hole and a connection portion located on the connection hole and having a matching allowance with respect to said connection hole on said wiring portion side being formed wider than a predetermined matching allowance by a predetermined width with which a required yield of successful matching can be assured.
Inventors
- 👤 Masahiro Abe
- 👤 Yasukazu Mase
- 👤 Tomie Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:48
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/40; H10W20/41; H10W20/43; H10W20/071; H10W20/081; H10W20/42; H10W72/00; H10W72/90
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
265 words
A method for patterning wirings, the method comprising the steps of: forming a connection hole in a semiconductor substrate so as to be rectangular in shape when viewed from above the semiconductor substrate and to have a plurality of sides; forming on a surface of the semiconductor substrate a conductive layer thinner in a first portion along the sidewalls of said connection hole than in a second portion alongside said connection hole; and patterning the conductive layer to form first and second wiring sections, such that: (a) the first wiring section is rectangular in shape when viewed from above the semiconductor substrate and has first to fourth sides, each of which is parallel to one of the plurality of sides of the connection hole, (b) a first distance, between the first side of the first wiring section and one of the plurality of sides of the connection hole which is closest to the first side is greater than a second distance, between one of the second to fourth sides of the first wiring section and one of the plurality of sides of the connection hole which is closest to the respective one of the second to fourth sides, and (c) the second wiring section has an end portion connected to the first side of the first wiring section and has a width narrower than a length of the first side of the first wiring section, the patterning providing that the first distance is greater than a minimum width by an amount assuring a desired yield in the presence of the expected distribution of patterning errors.
Claim 2
Independent Claim
265 words
A method for patterning wirings, the method comprising the steps of: forming a connection hole in a semiconductor substrate so as to be rectangular in shape when viewed from above the semiconductor substrate and to have a plurality of sides; forming on a surface of the semiconductor substrate a conductive layer thinner in a first portion along the sidewalls of said connection hole than in a second portion alongside said connection hole; and patterning the conductive layer to form first and second wiring sections, such that: (a) the first wiring section is rectangular in shape when viewed from above the semiconductor substrate and has first to fourth sides, each of which is parallel to one of the plurality of sides of the connection hole, (b) a first distance, between the first side of the first wiring section and one of the plurality of sides of the connection hole which is closest to the first side is greater than a second distance, between one of the second to fourth sides of the first wiring section and one of the plurality of sides of the connection hole which is closest to the respective one of the second to fourth sides, and (c) the second wiring section has an end portion connected to the first side of the first wiring section and has a width narrower than a length of the first side of the first wiring section, the patterning providing that the first distance is greater than a minimum width by an amount assuring a desired yield in the presence of the expected distribution of patterning errors.
Claim 3
Dependent Claim
19 words
A method for patterning wirings according to claim 1, wherein said connection hole is approximately 3.0 μm×3.0 μm square.
Claim 4
Dependent Claim
24 words
A method for patterning wirings according to claim 1, wherein the first distance is approximately 1.5 μm, the second distance is approximately 0.7 μm.
Claim 5
Dependent Claim
22 words
A method for patterning wirings according to claim 1, wherein the wiring width of said second wiring section is approximately 2.0 μm.
Claim 6
Dependent Claim
23 words
A method for patterning wirings according to claim 1, wherein said connection hole is one of a contact hole and a through hole.
Claim 7
Dependent Claim
43 words
A method for patterning wirings according to claim 1, wherein the relationships a<c<b are satisfied, where a indicates the thickness of said first portion provided along the sidewalls of said connection hole, b indicates the first distance, and c indicates the second distance.
Claim 8
Independent Claim
296 words
A method for patterning wirings, the method comprising the steps of: forming a connection hole in a semiconductor substrate so as to be rectangular in shape when viewed from above the substrate and to have a plurality of sides; forming on a surface of the semiconductor substrate a conductive layer thinner in a first portion along the sidewalls of said connection hole than in a second portion alongside said connection hole; and patterning the conductive layer to form first, second and third wiring sections, such that: (a) the first wiring section is rectangular in shape when viewed from above the semiconductor substrate and has first to fourth sides, each of which is parallel to one of the plurality of sides of the connection hole, (b) a first distance, between the first side of the first wiring section and one of the plurality of sides of the connection hole which is closest to the first side is greater than a second distance, between one of the second to fourth sides of the first wiring section and one of the plurality of sides of the connection hole which is closest to the respective one of the second to fourth sides, (c) the second wiring section has an end portion connected to the first side of the first wiring section and has a width narrower than a length of the first side of the first wiring section, and (d) the third wiring section is defined by the first wiring section, the second wiring section, and a straight line which extends through one end of each of the others of the respective second to fourth sides of the first wiring section and forms an angle of θ where (0<|θ|<π/2), with reference to the first side of the first wiring section.
Claim 9
Independent Claim
296 words
A method for patterning wirings, the method comprising the steps of: forming a connection hole in a semiconductor substrate so as to be rectangular in shape when viewed from above the substrate and to have a plurality of sides; forming on a surface of the semiconductor substrate a conductive layer thinner in a first portion along the sidewalls of said connection hole than in a second portion alongside said connection hole; and patterning the conductive layer to form first, second and third wiring sections, such that: (a) the first wiring section is rectangular in shape when viewed from above the semiconductor substrate and has first to fourth sides, each of which is parallel to one of the plurality of sides of the connection hole, (b) a first distance, between the first side of the first wiring section and one of the plurality of sides of the connection hole which is closest to the first side is greater than a second distance, between one of the second to fourth sides of the first wiring section and one of the plurality of sides of the connection hole which is closest to the respective one of the second to fourth sides, (c) the second wiring section has an end portion connected to the first side of the first wiring section and has a width narrower than a length of the first side of the first wiring section, and (d) the third wiring section is defined by the first wiring section, the second wiring section, and a straight line which extends through one end of each of the others of the respective second to fourth sides of the first wiring section and forms an angle of θ where (0<|θ|<π/2), with reference to the first side of the first wiring section.
Claim 10
Dependent Claim
19 words
A method for patterning wirings according to claim 7, wherein said connection hole is approximately 3.0 μm×3.0 m square.
Claim 11
Dependent Claim
25 words
A method for patterning wirings according to claim 7, wherein the first distance is approximately 1.5 μm, and the second distance is approximately 0.7 μm.
Claim 12
Dependent Claim
22 words
A method for patterning wirings according to claim 7, wherein the wiring width of said second wiring section is approximately 2.0 μm.
Claim 13
Dependent Claim
23 words
A method for patterning wirings according to claim 7, wherein said connection hole is one of a contact hole and a through hole.
Claim 14
Dependent Claim
42 words
A method for patterning wirings according to claim 7, wherein the relationships a<c<b are satisfied, where a indicates the thickness of the first portion of the conductive layer along the sidewalls, b indicates the first distance, and c indicates the second distance.
Claim 15
Independent Claim
266 words
A method for patterning wirings, the method comprising the steps of: forming a connection hole in a semiconductor substrate so as to be rectangular in shape when viewed from above the semiconductor substrate and to have a plurality of sides; forming on a surface of the semiconductor substrate a conductive layer thinner in a first portion along the sidewalls of said connection hole than in a second portion away from said first portion; and patterning the conductive layer to form first and second wiring sections, such that: (a) the first wiring section is rectangular in shape when viewed from above the semiconductor substrate and has first to fourth sides, each of which is parallel to one of the plurality of sides of the connection hole, (b) a first distance, between the first side of the first wiring section and one of the plurality of sides of the connection hole which is closest to the first side is greater than a second distance, between one of the second to fourth sides of the first wiring section and one of the plurality of sides of the connection hole which is closest to the respective one of the second to fourth sides, and (c) the second wiring section has an end portion connected to the first side of the first wiring section and has a width narrower than a length of the first side of the first wiring section, the patterning providing that the first distance is greater than a minimum width by an amount assuring a desired yield in the presence of the expected distribution of patterning errors.
Claim 16
Independent Claim
266 words
A method for patterning wirings, the method comprising the steps of: forming a connection hole in a semiconductor substrate so as to be rectangular in shape when viewed from above the semiconductor substrate and to have a plurality of sides; forming on a surface of the semiconductor substrate a conductive layer thinner in a first portion along the sidewalls of said connection hole than in a second portion away from said first portion; and patterning the conductive layer to form first and second wiring sections, such that: (a) the first wiring section is rectangular in shape when viewed from above the semiconductor substrate and has first to fourth sides, each of which is parallel to one of the plurality of sides of the connection hole, (b) a first distance, between the first side of the first wiring section and one of the plurality of sides of the connection hole which is closest to the first side is greater than a second distance, between one of the second to fourth sides of the first wiring section and one of the plurality of sides of the connection hole which is closest to the respective one of the second to fourth sides, and (c) the second wiring section has an end portion connected to the first side of the first wiring section and has a width narrower than a length of the first side of the first wiring section, the patterning providing that the first distance is greater than a minimum width by an amount assuring a desired yield in the presence of the expected distribution of patterning errors.
Claim 17
Dependent Claim
23 words
A method for patterning wirings according to claim 13, wherein said connection hole is one of a contact hole and a through hole.
Claim 18
Dependent Claim
43 words
A method for patterning wirings according to claim 13, wherein the relationships a<c<b are satisfied, where a indicates the thickness of said first portion provided along the sidewalls of said contact hole, b indicates the first distance, and c indicates the second distance.
Claim 19
Dependent Claim
70 words
A method for patterning wirings according to claim 13, further comprising: a third wiring section defined by the first wiring section, the second wiring section, and a straight line which extends through one end of each of the others of the respective second to fourth sides of the first wiring section and forms an angle of θ where (0<|θ|<π/2), with reference to the first side of the first wiring section.
Claim 20
Dependent Claim
19 words
A method for patterning wirings according to claim 16, wherein said connection hole is approximately 3.0 μm×3.0 μm square.
Claim 21
Dependent Claim
25 words
A method for patterning wirings according to claim 16, wherein the first distance is approximately 1.5 μm, and the second distance is approximately 0.7 μm.
Claim 22
Dependent Claim
23 words
A method for patterning wirings according to claim 16, wherein said connection hole is one of a contact hole and a through hole.
Claim 23
Dependent Claim
42 words
A method for patterning wirings according to claim 16, wherein the relationships a<c<b are satisfied, where a indicates the thickness of the first portion of the conductive layer along the sidewalls, b indicates the first distance, and c indicates the second distance.
References Cited (Backward Citations)
GB2029097A
Cited
US4196443A
Cited
US4381215A
Cited
JPS60208845A
Cited
EP0166344A2
Cited
JPS6378554A
Cited
US4812419A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-01 | 1998-10-31 | 1999-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-01 | 2002-10-31 | 2003-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-01 | 2006-10-31 | 2007-05-02 | $7700.00 | Window Closed / Lapsed |