US4196443A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Buried contact configuration for CMOS/SOS integrated circuits
Assignee: RCA Corp
•
Filing: 1978-08-25
•
Granted: 1980-04-01
•
Expires: 1998-08-25
Abstract
Abstract A configuration for manufacturing buried contacts in complementary symmetry metal oxide semiconductor (CMOS) manufactured using silicon-on-sapphire (SOS) technology is presented. The buried contact configuration is chosen to provide contact between the epitaxial silicon layer which is grown on the sapphire substrate and the polycrystalline silicon interconnects while insuring that the epitaxial silicon layer will not be removed during the etch which defines the polycrystalline silicon interconnects.
Inventors
- 👤 Andrew G. F. Dingwall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10D; H10D86/00; H10D86/01; H10D86/03
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
131 words
An integrated circuit structure of the type comprising at least one semiconductor device formed in a layer of semiconductor material which is on a substrate of insulating material, the semiconductor device including a region to which electrical contact must be made, the contact being made directly by a doped, conductive semiconductor interconnect, wherein the improvement comprises: an opening formed in an insulating layer overlying said layer of semiconductor material through which said conductive semiconductor interconnect contacts said underlying semiconductor layer, said opening having a shape selected to have at least one edge, when viewed from the top, which is not orthogonal to or parallel to at least one edge, when viewed from the top, of said conductive semiconductor interconnect which is at least partially crossed by said edge of said opening.
Claim 2
Dependent Claim
131 words
An integrated circuit structure of the type comprising at least one semiconductor device formed in a layer of semiconductor material which is on a substrate of insulating material, the semiconductor device including a region to which electrical contact must be made, the contact being made directly by a doped, conductive semiconductor interconnect, wherein the improvement comprises: an opening formed in an insulating layer overlying said layer of semiconductor material through which said conductive semiconductor interconnect contacts said underlying semiconductor layer, said opening having a shape selected to have at least one edge, when viewed from the top, which is not orthogonal to or parallel to at least one edge, when viewed from the top, of said conductive semiconductor interconnect which is at least partially crossed by said edge of said opening.
Claim 3
Dependent Claim
11 words
The structure of claim 1 wherein said insulating material is sapphire.
Claim 4
Dependent Claim
25 words
The structure of claim 2 wherein the semiconductor device is formed in a layer of silicon which has been epitaxially grown on said sapphire substrate.
Claim 5
Dependent Claim
17 words
The structure of claim 3 in which said doped, conductive semiconductor interconnect is formed of polycrystalline silicon.
Claim 6
Dependent Claim
12 words
The structure of claim 4 wherein said opening has a rhomboid shape.
Claim 7
Dependent Claim
12 words
The structure of claim 4 wherein said opening has an octagonal shape.
Claim 8
Dependent Claim
12 words
The structure of claim 4 wherein said opening has a hexagonal shape.
Claim 9
Dependent Claim
43 words
The structure of claim 4 wherein said opening is adapted to interconnect at least two semiconductor regions, one of said regions having opposite conductivity type to the other one of said regions, wherein said opening extends over the junction between the two regions.
References Cited (Backward Citations)
US4125854A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-01 | 1983-10-01 | 1984-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-01 | 1987-10-01 | 1988-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-01 | 1991-10-01 | 1992-04-01 | $7700.00 | Window Closed / Lapsed |