Semiconductor device

Abstract

Abstract PURPOSE:To contrive improvement both in moisture proof property against infiltration of moisture and the life of the title semiconductor device by a method wherein the overlapped region of the protective film and an aluminum wiring on the end part of a bonding aperture is formed to be wider in the direction of introduction into the internal part of the device of the aluminum wiring than in the other direction. CONSTITUTION:The aluminum located under a protective film is corroded by the moisture infiltrated from the corners and the like of a bonding aperture part 4. However, as the overlapped region 51a at the end of the bonding aperture region on the lead-out side an aluminum wiring 3 is formed sufficiently wider than the other regions 52-54, it takes a sufficiently long period of time on the region 51a before the aluminum is corroded due to the infiltration of moisture. Consequently, as the tolerance to the corrosion of aluminum in a bonding pad structure can be sufficiently large, a resin-sealed semiconductor device having high degree of moisture proof property can be obtained.

Inventors

• 👤 Junichi Mihashi
• 👤 三橋　順一

Bibliographic Details