Patent US5411631A successfully refreshed from Google Patents.
US5411631A
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Dry etching method
Assignee: Tokyo Electron Ltd
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Filing: 1993-11-12
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Granted: 1995-05-02
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Expires: 2013-11-12
Abstract
Abstract According to this invention, a dry etching method includes the step of sequentially forming an SiO2 film, an Al-Si-Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al-Si-Cu thin film by RIE using a gas mixture of Cl2 and BCl3 as an etching gas, and the step of removing etching residues by a sputter effect obtained by the plasma of the BCl3 gas.
Inventors
- 👤 Masaru Hori
- 👤 Haruo Okano
- 👤 Michishige Aoyama
- 👤 Masao Ito
- 👤 Kei Hattori
- 👤 Fumihiko Higuchi
- 👤 Yoshifumi Tahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:27
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; C; C23; C23F; C23F4/00
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
115 words
A dry etching method comprising the first step of forming a mask pattern on a film to be etched containing a plurality of materials having different etching rates; the second step of setting an etching gas in a plasma state and anisotropically etching said film to be etched mainly by a chemical action of a plasma of the etching gas using said mask pattern as a mask; the third step of setting a gas having a sputter effect in a plasma state and sputter-removing a surface of said film to be etched by a plasma of the gas; and wherein the second step and the third step are repeated a plurality of number of times.
Claim 2
Dependent Claim
115 words
A dry etching method comprising the first step of forming a mask pattern on a film to be etched containing a plurality of materials having different etching rates; the second step of setting an etching gas in a plasma state and anisotropically etching said film to be etched mainly by a chemical action of a plasma of the etching gas using said mask pattern as a mask; the third step of setting a gas having a sputter effect in a plasma state and sputter-removing a surface of said film to be etched by a plasma of the gas; and wherein the second step and the third step are repeated a plurality of number of times.
Claim 3
Dependent Claim
16 words
A method according to claim 1, wherein said film to be etched contains an Al alloy.
Claim 4
Dependent Claim
22 words
A method according to claim 1, wherein an oxide film is formed as an underlying layer of said film to be etched.
Claim 5
Dependent Claim
28 words
A method according to claim 1, wherein the gas having the plasma effect contains one member selected from the group consisting of BCl 3 and BBr 3 .
Claim 6
Dependent Claim
23 words
A method according to claim 1, further comprising the additional step of sputter-removing said film to be etched prior to the second step.
Claim 7
Dependent Claim
27 words
A method according to claim 1, wherein the time for the third step is controlled depending on an amount of etching residues obtained in the first step.
Claim 8
Dependent Claim
27 words
A method according to claim 1, wherein the time for the third step is controlled depending on a taper angle of an etching pattern to be obtained.
Claim 9
Dependent Claim
20 words
A method according to claim 1, wherein the thickness of said film to be etched is 100 to 1,000 nm.
Claim 10
Dependent Claim
30 words
A method according to claim 1, wherein the third step is performed by a gas mixture containing the gas having the sputter effect and the gas having the chemical action.
Claim 11
Dependent Claim
130 words
A dry etching method comprising: the first step of forming a mask pattern on a film to be etched containing, as a main component, an Al alloy containing at least one of Cu and Si; the second step of setting an etching gas containing at least one of Cl and Br in a plasma state and anisotropically etching said film to be etched mainly by a chemical action of a plasma of the etching gas using said mask pattern as a mask; the third step of setting a gas having a sputter effect in a plasma state and sputter-removing a surface of said film to be etched by a plasma of the gas; and wherein the second step and the third step are repeated a plurality of number of times.
Claim 12
Dependent Claim
130 words
A dry etching method comprising: the first step of forming a mask pattern on a film to be etched containing, as a main component, an Al alloy containing at least one of Cu and Si; the second step of setting an etching gas containing at least one of Cl and Br in a plasma state and anisotropically etching said film to be etched mainly by a chemical action of a plasma of the etching gas using said mask pattern as a mask; the third step of setting a gas having a sputter effect in a plasma state and sputter-removing a surface of said film to be etched by a plasma of the gas; and wherein the second step and the third step are repeated a plurality of number of times.
Claim 13
Dependent Claim
27 words
A method according to claim 10, wherein the time for the third step is controlled depending on an amount of etching residues obtained in the first step.
Claim 14
Dependent Claim
122 words
A dry etching method comprising: the first step of forming a mask pattern on a film to be etched containing, as a main component, an Al alloy containing at least one of Cu and Si; the second step of setting an etching gas in a plasma state and anisotropically etching said film to be etched mainly by a chemical action of a plasma of the etching gas using said mask pattern as a mask; the third step of setting a gas having a sputter effect in a plasma state and sputter-removing a surface of said film to be etched by a plasma of the gas; and wherein the second step and the third step are repeated a plurality of number of times.
Claim 15
Dependent Claim
122 words
A dry etching method comprising: the first step of forming a mask pattern on a film to be etched containing, as a main component, an Al alloy containing at least one of Cu and Si; the second step of setting an etching gas in a plasma state and anisotropically etching said film to be etched mainly by a chemical action of a plasma of the etching gas using said mask pattern as a mask; the third step of setting a gas having a sputter effect in a plasma state and sputter-removing a surface of said film to be etched by a plasma of the gas; and wherein the second step and the third step are repeated a plurality of number of times.
Claim 16
Dependent Claim
27 words
A method according to claim 10, wherein the time for the third step is controlled depending on a taper angle of an etching pattern to be obtained.
Claim 17
Dependent Claim
28 words
A method according to claim 12, wherein the gas having the plasma effect contains one member selected from the group consisting of BCl 3 and BBr 3 .
Claim 18
Dependent Claim
20 words
A method according to claim 10, wherein the thickness of said film to be etched is 100 to 1,000 nm.
Claim 19
Dependent Claim
27 words
A method according to claim 12, wherein the time for the third step is controlled depending on an amount of etching residues obtained in the first step.
Claim 20
Dependent Claim
27 words
A method according to claim 12, wherein the time for the third step is controlled depending on a taper angle of an etching pattern to be obtained.
Claim 21
Dependent Claim
20 words
A method according to claim 12, wherein the thickness of said film to be etched is 100 to 1,000 nm.
Claim 22
Dependent Claim
30 words
A method according to claim 12, wherein the third step is performed by a gas mixture containing the gas having the sputter effect and the gas having the chemical reaction.
Claim 23
Dependent Claim
23 words
A method according to claim 12, further comprising the additional step of sputter-removing said film to be etched prior to the second step.
Claim 24
Dependent Claim
30 words
A method according to claim 10, wherein the third step is performed by a gas mixture containing the gas having the sputter effect and the gas having the chemical reaction.
Claim 25
Dependent Claim
23 words
A method according to claim 10, further comprising the additional step of sputter-removing said film to be etched prior to the second step.
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