Etching process

Abstract

Abstract PURPOSE:To enable the etching in specified depth by means of repeating irradiation with high energy particles and etch-removing damage layers. CONSTITUTION:A masking material 33 with an opening 32 is formed on an Si substrate 31. When the surface of substrate 31 is irradiated with ion 34 accelerated up to moderate energy in an ion irradiating chamber, a damage layer 35 DELTAt in depth equivalent to the range of irradiating ion is formed in the surface region of opening 32 of the Si substrate 31. Next when the Si substrate 31 is fed to a plasma-etching chamber to be exposed to etching gas plasma, the damage layer 35 only is removed by etching. Likewise when the Si substrate 31 with the damage layer 35 etch-removed is ion-irradiated again, another damage layer DELTAt in depth is formed again. Furthermore when the Si substrate 31 is exposed to plasma etching region again, the second damage layer is removed with the Si in opening 32 etched down to 2DELTAt in depth. Through these procedures, the Si in opening 32 can be etched down to nDELTAt in depth by means of repeating said procedures by n times.

Inventors

• 👤 Mitsunori Ketsusako
• 👤 光紀 蕨迫
• 👤 Kiyoshi Miyake
• 👤 三宅　潔

Bibliographic Details