US5407867A — Method of forming a thin film on surface of semic…

Claim 1

Independent Claim 194 words

A method of removing a naturally grown oxide film and other contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface, comprising the sequential steps of: placing said semiconductor substrate in a pretreatment chamber; introducing into said pretreatment chamber a reaction gas selected from the group consisting of chlorine gas and fluorine gas capable of reacting with said naturally grown oxide film and said other contaminants; heating said semiconductor substrate at a temperature greater than 200° and up to 700° C.; irradiating said reaction gas with light; said light having a wavelength capable of performing a photochemical reaction of said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate with the reaction gas introduced into said chamber at said temperature, while said semiconductor substrate is being heated; moving said semiconductor substrate to a chamber for the formation of said thin film without exposing it to the air, after removing said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate by said photochemical reaction; and forming the thin film on the clean surface of said semiconductor substrate.

Claim 2

Independent Claim 194 words

A method of removing a naturally grown oxide film and other contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface, comprising the sequential steps of: placing said semiconductor substrate in a pretreatment chamber; introducing into said pretreatment chamber a reaction gas selected from the group consisting of chlorine gas and fluorine gas capable of reacting with said naturally grown oxide film and said other contaminants; heating said semiconductor substrate at a temperature greater than 200° and up to 700° C.; irradiating said reaction gas with light; said light having a wavelength capable of performing a photochemical reaction of said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate with the reaction gas introduced into said chamber at said temperature, while said semiconductor substrate is being heated; moving said semiconductor substrate to a chamber for the formation of said thin film without exposing it to the air, after removing said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate by said photochemical reaction; and forming the thin film on the clean surface of said semiconductor substrate.

Claim 3

Dependent Claim 53 words

A method in accordance with claim 1, wherein the removal of said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate and the formation of said thin film are performed in a single chamber by moving said substrate from a pretreatment portion to a thin film formation portion.

Claim 4

Dependent Claim 45 words

A method in accordance with claim 1, wherein the removal of said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate is performed in a first chamber and the formation of said thin film is performed in a second chamber.

Claim 5

Dependent Claim 75 words

A method in accordance with claim 3, wherein said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate are removed in said pretreatment chamber, the semiconductor substrate is subsequently moved into a gas atmosphere which is controlled such that said naturally grown oxide film is not formed again, and the semiconductor substrate is then moved into said chamber for the formation of said thin film to form said thin film.

Claim 6

Dependent Claim 14 words

A method in accordance with claim 1, wherein said light is ultra violet rays.

Claim 7

Dependent Claim 38 words

A method in accordance with claim 1, wherein a light source for irradiation of said light comprises a low pressure mercury lamp, a high pressure mercury lamp, a mercury-xenon lamp, an Argon arc lamp, or an excimer laser.

Claim 8

Dependent Claim 29 words

A method in accordance with claim 1, wherein the pressure of said reaction gas in said pretreatment chamber is selected in the range from atmospheric pressure to 0.1 Torr.

Claim 9

Dependent Claim 23 words

A method in accordance with claim 1, wherein said semiconductor substrate is heated at said temperature by irradiating said semiconductor substrate with light.

Claim 10

Independent Claim 210 words

A method of removing a naturally grown oxide film and other contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface, comprising the sequential steps of: providing a first chamber for removing said naturally grown oxide film and other contaminants, a second chamber for forming said thin film, and a third chamber in which a gas atmosphere is controlled and provided between said first chamber and said second chamber, placing said semiconductor substrate in said first chamber; introducing into said first chamber a reaction gas capable of reacting with said naturally grown oxide film and said other contaminants; removing said naturally grown oxide film and other contaminants on the surface of the semiconductor substrate by irradiating said reaction gas with light and heating said semiconductor substrate at a temperature within the range of 200°-700° C. in said first chamber; moving said semiconductor substrate from said first chamber to said third chamber, controlling the gas atmosphere in said third chamber such that said naturally grown oxide is not formed again on the semiconductor substrate, moving said semiconductor substrate from said third chamber to said second chamber; and forming the thin film on said cleaned surface of said semiconductor substrate in said second chamber.

Claim 11

Independent Claim 210 words

A method of removing a naturally grown oxide film and other contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface, comprising the sequential steps of: providing a first chamber for removing said naturally grown oxide film and other contaminants, a second chamber for forming said thin film, and a third chamber in which a gas atmosphere is controlled and provided between said first chamber and said second chamber, placing said semiconductor substrate in said first chamber; introducing into said first chamber a reaction gas capable of reacting with said naturally grown oxide film and said other contaminants; removing said naturally grown oxide film and other contaminants on the surface of the semiconductor substrate by irradiating said reaction gas with light and heating said semiconductor substrate at a temperature within the range of 200°-700° C. in said first chamber; moving said semiconductor substrate from said first chamber to said third chamber, controlling the gas atmosphere in said third chamber such that said naturally grown oxide is not formed again on the semiconductor substrate, moving said semiconductor substrate from said third chamber to said second chamber; and forming the thin film on said cleaned surface of said semiconductor substrate in said second chamber.

Claim 12

Independent Claim 175 words

A method of removing a naturally grown oxide film and other contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface by sputtering, comprising the sequential steps of: providing a chamber having a light source for irradiating a light into the chamber and a sputtering target placed in the chamber for providing components of the thin film; placing said semiconductor substrate in said chamber such that the semiconductor substrate is opposite said light source; introducing into said chamber a reaction gas capable of reacting with said naturally grown oxide film and said other contaminants; removing said naturally grown oxide film and other contaminants on the surface of the semiconductor substrate by irradiating said reaction gas with light of said light source and heating said semiconductor substrate at a temperature within the range of 200°-700° C.; moving said semiconductor substrate such that the semiconductor substrate is generally opposite said sputtering target; and forming the thin film on the cleaned surface of said semiconductor substrate by sputtering said target.

Claim 13

Independent Claim 175 words

A method of removing a naturally grown oxide film and other contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface by sputtering, comprising the sequential steps of: providing a chamber having a light source for irradiating a light into the chamber and a sputtering target placed in the chamber for providing components of the thin film; placing said semiconductor substrate in said chamber such that the semiconductor substrate is opposite said light source; introducing into said chamber a reaction gas capable of reacting with said naturally grown oxide film and said other contaminants; removing said naturally grown oxide film and other contaminants on the surface of the semiconductor substrate by irradiating said reaction gas with light of said light source and heating said semiconductor substrate at a temperature within the range of 200°-700° C.; moving said semiconductor substrate such that the semiconductor substrate is generally opposite said sputtering target; and forming the thin film on the cleaned surface of said semiconductor substrate by sputtering said target.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1998-04-17	1998-10-17	1999-04-18	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2002-04-17	2002-10-17	2003-04-18	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2006-04-17	2006-10-17	2007-04-18	$7700.00	Window Closed / Lapsed

Method of forming a thin film on surface of semiconductor substrate

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag