Patent US5406515A successfully refreshed from Google Patents.
US5406515A
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Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby
Assignee: International Business Machines Corp
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Filing: 1993-12-01
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Granted: 1995-04-11
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Expires: 2013-12-01
Abstract
Abstract Low leakage trenches for Dynamic Random Access Memory (DRAM) cells and the devices formed thereby are disclosed. In one embodiment of the present invention, [the method includes forming] a diffusion ring is surrounding an upper portion of the trench. In another embodiment, a portion of the diffusion ring extends to the surface of a substrate. The diffusion ring can be formed by outdiffusing a dopant from a doped material deposited within the trench. In a further embodiment, the present [method] invention includes [forming] an insulating ring surrounding an upper portion of the trench. The insulating ring can be formed by thermal oxidation or by etching a sidewall shallow trench and depositing an insulating material therein. In another embodiment, a portion of the insulating ring extends to the surface of the substrate.
Inventors
- 👤 Thekkemadathil V. Rajeevakumar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:16
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
150 words
A dynamic random access memory cell comprising: a substrate of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said substrate having a second conductivity type; at least one access device disposed in said region, at least one storage means extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said substrate, said storage means being electrically isolated from said region and said upper and lower portions of said substrate by an insulating layer; and a buried diffusion ring disposed within said region, beneath the surface of said region, surrounding an upper portion of said at least one storage means and being contiguous with said insulating layer on all sides, said buried diffusion ring being heavily doped with said second conductivity type.
Claim 2
Dependent Claim
150 words
A dynamic random access memory cell comprising: a substrate of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said substrate having a second conductivity type; at least one access device disposed in said region, at least one storage means extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said substrate, said storage means being electrically isolated from said region and said upper and lower portions of said substrate by an insulating layer; and a buried diffusion ring disposed within said region, beneath the surface of said region, surrounding an upper portion of said at least one storage means and being contiguous with said insulating layer on all sides, said buried diffusion ring being heavily doped with said second conductivity type.
Claim 3
Dependent Claim
23 words
The dynamic random access memory cell of claim 1, wherein a portion of said diffusion ring extends to a surface of said substrate.
Claim 4
Dependent Claim
27 words
The dynamic random access memory cell of claim 1, further including means for interconnecting said at least one access device and said at least one storage means.
Claim 5
Dependent Claim
26 words
The dynamic random access memory cell of claim 1, wherein said substrate is made of semiconductor material at least a portion of which is heavily doped.
Claim 6
Dependent Claim
20 words
The dynamic random access memory cell of claim 4, wherein said semiconductor material is silicon of n-conductivity or p-conductivity type.
Claim 7
Dependent Claim
21 words
The dynamic random access memory cell of claim 1, wherein said at least one access device is a field effect transistor.
Claim 8
Dependent Claim
19 words
The dynamic random access memory cell of claim 6, wherein said electrode is comprised of heavily doped polycrystalline silicon.
Claim 9
Dependent Claim
28 words
The dynamic random access memory cell of claim 1, wherein said at least one storage means is an electrode disposed in an insulating spaced relationship with said substrate.
Claim 10
Dependent Claim
31 words
The dynamic random access memory cell of claim 1, wherein said substrate includes a heavily doped lower portion and a lightly doped upper portion disposed over said heavily doped lower portion.
Claim 11
Dependent Claim
23 words
The dynamic random access memory cell of claim 9, wherein said region is disposed in said lightly doped upper portion of said substrate.
Claim 12
Dependent Claim
143 words
A dynamic random access memory cell comprising: a semiconductor substrate having a lightly doped portion of one conductivity type overlying a heavily doped portion of the same conductivity type, a region of second conductivity type disposed in said lightly doped portion, at least one access transistor disposed in said region, at least one trench extending from the surface of said region through said region and said lightly doped portion into said heavily doped portion, at least one storage electrode disposed in said at least one trench and being insulated from said region and said substrate by an insulating layer, and a buried diffusion ring disposed within said region, beneath the surface of said region, surrounding an upper portion of said trench and being contiguous with said insulating layer on all sides, said buried diffusion ring being heavily doped with said second conductivity type.
Claim 13
Dependent Claim
143 words
A dynamic random access memory cell comprising: a semiconductor substrate having a lightly doped portion of one conductivity type overlying a heavily doped portion of the same conductivity type, a region of second conductivity type disposed in said lightly doped portion, at least one access transistor disposed in said region, at least one trench extending from the surface of said region through said region and said lightly doped portion into said heavily doped portion, at least one storage electrode disposed in said at least one trench and being insulated from said region and said substrate by an insulating layer, and a buried diffusion ring disposed within said region, beneath the surface of said region, surrounding an upper portion of said trench and being contiguous with said insulating layer on all sides, said buried diffusion ring being heavily doped with said second conductivity type.
Claim 14
Dependent Claim
23 words
The dynamic random access memory cell of claim 11, wherein a portion of said diffusion ring extends to a surface of said substrate.
Claim 15
Dependent Claim
27 words
The dynamic random access memory cell of claim 11, further including means for interconnecting said at least one storage electrode and said at least one access transistor.
Claim 16
Dependent Claim
21 words
The dynamic random access memory cell of claim 13, wherein said at least one access transistor is a field effect transistor.
Claim 17
Dependent Claim
24 words
The dynamic random access memory cell of claim 14, wherein said at least one storage electrode is made of heavily doped polycrystalline semiconductor material.
Claim 18
Dependent Claim
21 words
The dynamic random access memory cell of claim 15, wherein said means for interconnecting is a region of polycrystalline semiconductor material.
Claim 19
Dependent Claim
15 words
The dynamic random access memory cell of claim 16, wherein said semiconductor material is silicon.
Claim 20
Dependent Claim
151 words
A dynamic random access memory cell comprising: a substrate of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said substrate having a second conductivity type; at least one access device disposed in said region, at least one storage means extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said substrate, said storage means being electrically isolated from said region and said upper and lower portions of said substrate by an insulating layer; and a buried insulating ring disposed within said region, beneath the surface of said region, surrounding an upper portion of said at least one storage means and being contiguous with said insulating layer on all sides, a portion of said insulating ring extending to a surface of said substrate.
Claim 21
Dependent Claim
151 words
A dynamic random access memory cell comprising: a substrate of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said substrate having a second conductivity type; at least one access device disposed in said region, at least one storage means extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said substrate, said storage means being electrically isolated from said region and said upper and lower portions of said substrate by an insulating layer; and a buried insulating ring disposed within said region, beneath the surface of said region, surrounding an upper portion of said at least one storage means and being contiguous with said insulating layer on all sides, a portion of said insulating ring extending to a surface of said substrate.
Claim 22
Dependent Claim
32 words
The dynamic random access memory cell of claim 18, wherein said insulating ring is comprised of a material selected from the group consisting of silicon oxide, silicon dioxide, oxynitride and silicon nitride.
Claim 23
Dependent Claim
27 words
The dynamic random access memory cell of claim 18, further including means for interconnecting said at least one access device and said at least one storage means.
Claim 24
Dependent Claim
26 words
The dynamic random access memory cell of claim 18, wherein said substrate is made of semiconductor material at least a portion of which is heavily doped.
Claim 25
Dependent Claim
20 words
The dynamic random access memory cell of claim 21 wherein said semiconductor material is silicon of n-conductivity or p-conductivity type.
Claim 26
Dependent Claim
21 words
The dynamic random access memory cell of claim 18 wherein said at least one access device is a field effect transistor.
Claim 27
Dependent Claim
20 words
The dynamic random access memory cell of claim 23, wherein said electrode is comprised of heavily doped poly crystalline silicon.
Claim 28
Dependent Claim
28 words
The dynamic random access memory cell of claim 18, wherein said at least one storage means is an electrode disposed in an insulating spaced relationship with said substrate.
Claim 29
Dependent Claim
31 words
The dynamic random access memory cell of claim 18, wherein said substrate includes a heavily doped lower portion and a lightly doped upper portion disposed over said heavily doped lower portion.
Claim 30
Dependent Claim
23 words
The dynamic random access memory cell of claim 26, wherein said region is disposed in said lightly doped upper portion of said substrate.
Claim 31
Dependent Claim
144 words
A dyanamic random access memory cell comprising: a semiconductor substrate having a lightly doped portion of one conductivity type overlying a heavily doped portion of the same conductivity type, a region of second conductivity type disposed in said lightly doped portion, at least one access transistor disposed in said region, at least one trench extending from the surface of said region through said region and said lightly doped portion into said heavily doped portion, at least one storage electrode disposed in said at least one trench and being insulated from said region and said substrate by an insulating layer, and a buried insulating ring disposed within said region, beneath the surface of said region, surrounding an upper portion of said trench and being contiguous with said insulating layer on all sides, a portion of said insulating ring extending to a surface of said substrate.
Claim 32
Dependent Claim
144 words
A dyanamic random access memory cell comprising: a semiconductor substrate having a lightly doped portion of one conductivity type overlying a heavily doped portion of the same conductivity type, a region of second conductivity type disposed in said lightly doped portion, at least one access transistor disposed in said region, at least one trench extending from the surface of said region through said region and said lightly doped portion into said heavily doped portion, at least one storage electrode disposed in said at least one trench and being insulated from said region and said substrate by an insulating layer, and a buried insulating ring disposed within said region, beneath the surface of said region, surrounding an upper portion of said trench and being contiguous with said insulating layer on all sides, a portion of said insulating ring extending to a surface of said substrate.
Claim 33
Dependent Claim
32 words
The dynamic random access memory cell of claim 28, wherein said insulating ring is comprised of a material selected from the group consisting of silicon oxide, silicon dioxide, oxynitride and silicon nitride.
Claim 34
Dependent Claim
27 words
The dynamic random access memory cell of claim 28, further including means for interconnecting said at least one storage electrode and said at least one access transistor.
Claim 35
Dependent Claim
21 words
The dynamic random access memory cell of claim 30, wherein said at least one access transistor is a field effect transistor.
Claim 36
Dependent Claim
24 words
The dynamic random access memory cell of claim 31, wherein said at least one storage electrode is made of heavily doped polycrystalline semiconductor material.
Claim 37
Dependent Claim
21 words
The dynamic random access memory cell of claim 32, wherein said means for interconnecting is a region of polycrystalline semiconductor material.
Claim 38
Dependent Claim
15 words
The dynamic random access memory cell of claim 33, wherein said semiconductor material is silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |