US5077232A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making stacked capacitor DRAM cells
Assignee: Samsung Electronics Co Ltd
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Filing: 1990-03-09
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Granted: 1991-12-31
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Expires: 2010-03-09
Abstract
Abstract A method for manufacturing a combined stack-trench type capacitor includes forming a trench in the semiconductor substrate. A conductive layer, used as a first electrode, a dielectric film and another conductive layer, used as a second electrode, are deposited successively and continuously in the trench. The two conductive layers and the sandwiched dielectric film are then etched to form a capacitor pattern. An insulating layer is formed along the edges of the capacitor pattern, and then a third conductive layer is formed over the entire structure.
Inventors
- 👤 Seong-tae Kim
- 👤 Su-han Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:19
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37; H10B12/377; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/05; H10B12/053; H10B12/34; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; H10W20/074
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
179 words
A method manufacturing for a semiconductor device comprising the steps of: forming a field oxide layer upon a first conductivity type semiconductor substrate to define an active region; forming a gate electrode, a source region and a drain region of a transistor on said active region; p1 forming a first conductive layer on a portion of said field oxide layer; forming a trench in said semiconductor substrate, between said field oxide layer and said gate electrode; depositing a second conductive layer, a dielectric film and a third conductive layer on the inside of said trench and said first insulation layer in a continuous manner; depositing an etch blocking a layer and fifth conductive layer respectively on said third conductive layer, and planarizing to expose said etch blocking layer. simultaneously etching portions of said second conductive layer, said dielectric film and said third conductive layer to thereby define a capacitor pattern; forming a second insulating layer along side walls of said capacitor pattern; forming a fourth conductive layer over at least said third conductive region and said second insulating layer.
Claim 2
Independent Claim
179 words
A method manufacturing for a semiconductor device comprising the steps of: forming a field oxide layer upon a first conductivity type semiconductor substrate to define an active region; forming a gate electrode, a source region and a drain region of a transistor on said active region; p1 forming a first conductive layer on a portion of said field oxide layer; forming a trench in said semiconductor substrate, between said field oxide layer and said gate electrode; depositing a second conductive layer, a dielectric film and a third conductive layer on the inside of said trench and said first insulation layer in a continuous manner; depositing an etch blocking a layer and fifth conductive layer respectively on said third conductive layer, and planarizing to expose said etch blocking layer. simultaneously etching portions of said second conductive layer, said dielectric film and said third conductive layer to thereby define a capacitor pattern; forming a second insulating layer along side walls of said capacitor pattern; forming a fourth conductive layer over at least said third conductive region and said second insulating layer.
Claim 3
Dependent Claim
31 words
The method for manufacturing a semiconductor device as claimed in claim 1, further comprising the step of forming an etch blocking layer on said first insulating layer to define said trench.
Claim 4
Dependent Claim
27 words
The method for manufacturing a semiconductor device as claimed in claim 1, wherein said etch blocking layer comprises one of an LTO layer and an HTO layer.
Claim 5
Dependent Claim
22 words
The method for manufacturing a semiconductor device as claimed in claim 1, wherein said planarizing step is performed by an etchback process.
Claim 6
Dependent Claim
32 words
The method for manufacturing a semiconductor device as claimed in claim 1, further comprising the step of removing said etch blocking layer exposed via said planarizing step by applying a BOE process.
Claim 7
Dependent Claim
26 words
The method for manufacturing a semiconductor device as claimed in claim 1, wherein said formation of said second insulating layer is achieved by an etchback process.
Claim 8
Dependent Claim
29 words
The method for manufacturing a semiconductor device as claimed in claim 1 or 6, wherein said second insulating layer comprises one of an LTO layer and an HTO layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-30 | 1995-07-01 | 1995-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-30 | 1999-07-01 | 1999-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-30 | 2003-07-01 | 2003-12-31 | $7700.00 | Window Closed / Lapsed |