Patent US5403764A successfully refreshed from Google Patents.
US5403764A
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Method for producing a ROM on a semiconductor device having a nonvolatile memory
Assignee: Rohm Co Ltd
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Filing: 1993-03-26
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Granted: 1995-04-04
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Expires: 2013-03-26
Abstract
Abstract In a method for producing a semiconductor device having a nonvolatile memory capable of electrically writing, reading and erasing, and a read only memory; the improvement wherein the method includes a step of writing a state of "0" or "1" in the read only memory by doping said read only memory with an impurity for adjusting a threshold voltage of the read only memory, and steps for producing the read only memory other than the step of writing are the same as steps for producing the nonvolatile memory.
Inventors
- 👤 Hiroki Yamamoto
- 👤 Hiroshi Oji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:21
CPC Classifications
H; H10; H10B; H10B20/00; H10B20/60; H10B41/00; H10B41/40
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
187 words
A method for producing a semiconductor device having a flash memory and a read only memory comprising steps of: (a) forming a thin insulating film on a surface of a substrate; (b) forming a field insulating film for isolating each memory cell; (c) doping a region where a read only memory cell is to be formed with an impurity for controlling a threshold voltage in a first state of storing; (d) doping said region where said read only memory call is to be formed in a second state, with an impurity for controlling a threshold voltage in a second state of storing, after masking part of said region where said read only memory cell in a first state of storing; (e) forming a first polysilicon film, an interlayer insulating film and a second polysilicon film in order on a surface of the semiconductor substrate and forming a gate electrode by patterning; and (f) forming a source region and a drain region by doping regions on opposite sides of the gate electrode with an impurity in such a manner that the gate electrode is used as a mask.
Claim 2
Independent Claim
187 words
A method for producing a semiconductor device having a flash memory and a read only memory comprising steps of: (a) forming a thin insulating film on a surface of a substrate; (b) forming a field insulating film for isolating each memory cell; (c) doping a region where a read only memory cell is to be formed with an impurity for controlling a threshold voltage in a first state of storing; (d) doping said region where said read only memory call is to be formed in a second state, with an impurity for controlling a threshold voltage in a second state of storing, after masking part of said region where said read only memory cell in a first state of storing; (e) forming a first polysilicon film, an interlayer insulating film and a second polysilicon film in order on a surface of the semiconductor substrate and forming a gate electrode by patterning; and (f) forming a source region and a drain region by doping regions on opposite sides of the gate electrode with an impurity in such a manner that the gate electrode is used as a mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |