Abstract PCT No. PCT/JP92/00130 Sec. 371 Date Oct. 13, 1992 Sec. 102(e) Date Oct. 13, 1992 PCT Filed Feb. 10, 1992 PCT Pub. No. WO93/16489 PCT Pub. Date Aug. 19, 1993.The present invention relates to a method of measuring junction temperature of a diode junction within a semiconductor device. The method has the steps of measuring current/voltage characteristics for various diodes at room temperature, determining an ideal factor for each diode, changing the temperature of the diodes to a selected temperature, remeasuring current/voltage characteristics for each diode, and comparing the measurements that have been made so as to obtain a temperature coefficients. The method also has the steps of measuring, at room temperature, a current/voltage characteristic of a diode to be utilized, determining an ideal factor from the measured current/voltage characteristic, determining a temperature coefficient corresponding to the ideal factor of by performing a linear interprelation between the ideal factors obtained for the various diodes, the ideal factor obtained for the diode, and the temperature coefficients of the various diodes, placing the diode where it will be used, measuring the current/voltage characteristic of the diode, determining the junction temperature of the diode from the temperature coefficient of the various diodes, the current/voltage characteristic of the diode at room temperature and where it will be used.
Inventors
👤 Hideaki Nishizawa
👤 Masanori Nishiguchi
👤 Atsushi Miki
👤 Mitsuaki Fujihira
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-07 00:56
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/20; H10P74/203
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
307 words
A method of measuring junction temperature of a diode junction within a semiconductor device, comprising the steps of: a) measuring current/voltage characteristics for various diodes at room temperature; b) determining an ideal factor for each diode used in step a based on the formula: ##EQU6## wherein: I F is a forward current; S is the area of the Schottky contact; A is an effective Richardson constant; T is an absolute temperature; q is the charge of an electron; Φ B is a Schottky barrier height; k is a Boltzmann constant; V F is a forward voltage; and n is an ideal factor; c) changing the temperature of the diodes used in step a to a selected temperature, the selected temperature being different than the room temperature; d) measuring current/voltage characteristics for each diode used in step c; e) comparing the measurements obtained in step d with the measurements obtained in step a, so as to obtain a temperature coefficient for each diode used in step a; f) measuring, at room temperature, a current/voltage characteristic of a diode to be utilized; g) determining an ideal factor from the measured current/voltage characteristic of the diode used in step f based on the formula used in step b; h) determining a temperature coefficient corresponding to the ideal factor obtained in step g by performing a linear interpolation between the ideal factors obtained in step b, the ideal factor obtained in step g, and the temperature coefficients obtained in step e; i) placing the diode used in step f where it will be used; j) measuring a current/voltage characteristic of the diode used in step f; k) determining the junction temperature of the diode used in step f from the temperature coefficient determined in step h, the current/voltage characteristic measured in step f, and the current/voltage characteristic measured in step j.
Claim 2
Independent Claim
307 words
A method of measuring junction temperature of a diode junction within a semiconductor device, comprising the steps of: a) measuring current/voltage characteristics for various diodes at room temperature; b) determining an ideal factor for each diode used in step a based on the formula: ##EQU6## wherein: I F is a forward current; S is the area of the Schottky contact; A is an effective Richardson constant; T is an absolute temperature; q is the charge of an electron; Φ B is a Schottky barrier height; k is a Boltzmann constant; V F is a forward voltage; and n is an ideal factor; c) changing the temperature of the diodes used in step a to a selected temperature, the selected temperature being different than the room temperature; d) measuring current/voltage characteristics for each diode used in step c; e) comparing the measurements obtained in step d with the measurements obtained in step a, so as to obtain a temperature coefficient for each diode used in step a; f) measuring, at room temperature, a current/voltage characteristic of a diode to be utilized; g) determining an ideal factor from the measured current/voltage characteristic of the diode used in step f based on the formula used in step b; h) determining a temperature coefficient corresponding to the ideal factor obtained in step g by performing a linear interpolation between the ideal factors obtained in step b, the ideal factor obtained in step g, and the temperature coefficients obtained in step e; i) placing the diode used in step f where it will be used; j) measuring a current/voltage characteristic of the diode used in step f; k) determining the junction temperature of the diode used in step f from the temperature coefficient determined in step h, the current/voltage characteristic measured in step f, and the current/voltage characteristic measured in step j.
Claim 3
Dependent Claim
45 words
A method of measuring junction temperature according to claim 1, wherein the linear interpolation recited in step h is accomplished by the use of a chart showing a relationship between the ideal factors determined in step b and the temperature coefficients obtained in step e.
Claim 4
Dependent Claim
22 words
A method of measuring junction temperature according to claim 1, wherein the selected temperature recited in step c is below 150° C.