US5024535A
Expired / Lapsed
US
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Semiconductor light source temperature measurement
Assignee: Honeywell Inc
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Filing: 1989-12-20
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Granted: 1991-06-18
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Expires: 2009-12-20
Abstract
Abstract A temperature sensing semiconductor device is fabricated in the same substrate as a semiconductor light source. A sensing voltage generated across the sensing device is proportional to light source temperature. The sensing voltage is amplified by an operational amplifier, and converted into a digital signal by an analog to digital converter. A microprocessor converts the digital signal into a corresponding temperature signal using a look-up table.
Inventors
- 👤 Charles R. Winston, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:36
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/0014; G; G01; G01K; G01K11/00; G01K11/12; G01K7/00; G01K7/01; G05; G05D; G05D23/00; G05D23/19; G05D23/27; H01S5/06; H01S5/068; H01S5/06804; H01S5/06808
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
72 words
Apparatus, comprising: a semiconductor substrate; a semiconductor light source, formed in said semiconductor substrate; and temperature sensing means, formed in said semiconductor substrate in proximity to said semiconductor light source, for providing an electrical signal indicative of an electrical voltage across said temperature sensing means, said electrical signal varying as a function of the temperature of said semiconductor substrate, whereby the temperature of said substrate varies as said light source is operated.
Claim 2
Dependent Claim
72 words
Apparatus, comprising: a semiconductor substrate; a semiconductor light source, formed in said semiconductor substrate; and temperature sensing means, formed in said semiconductor substrate in proximity to said semiconductor light source, for providing an electrical signal indicative of an electrical voltage across said temperature sensing means, said electrical signal varying as a function of the temperature of said semiconductor substrate, whereby the temperature of said substrate varies as said light source is operated.
Claim 3
Dependent Claim
30 words
Apparatus according to claim 1, further comprising signal processing means for providing, in response to said electrical signal, a temperature signal indicative of the temperature of said semiconductor light source.
Claim 4
Dependent Claim
35 words
Apparatus according to claim 2, wherein said signal processing means comprises means for providing a digital signal in response to said electrical signal, and for providing said temperature signal in response to said digital signal.
Claim 5
Dependent Claim
14 words
Apparatus according to claim 3 further comprising amplifying means for amplifying said electrical signal.
Claim 6
Dependent Claim
32 words
Apparatus according to claim 2, wherein said signal processing means comprises means for providing, in response to said temperature signal, a wavelength signal indicative of the wavelength of said semiconductor light source.
Claim 7
Dependent Claim
13 words
Apparatus according to claim 1 wherein said temperature sensing means is a diode.
Claim 8
Dependent Claim
14 words
Apparatus according to claim 1 wherein said temperature sensing means is a zener diode.
Claim 9
Dependent Claim
15 words
Apparatus according to claim 1 wherein said temperature sensing means is a transistor base-emitter junction.
Claim 10
Dependent Claim
15 words
Apparatus according to claim 1 wherein said temperature sensing means is a transistor base-collector junction.
Claim 11
Dependent Claim
14 words
Apparatus according to claim 1 wherein said temperature sensing means is a semiconductor resistor.
Claim 12
Independent Claim
114 words
A method of measuring the temperature of a semiconductor light source, comprising the steps of: providing a semiconductor substrate; forming the semiconductor light source in said semiconductor substrate; forming a temperature sensing device in said semiconductor substrate in proximity to the light source; injecting electrical current through said temperature sensing device; measuring the voltage across said temperature sensing device; and determining the temperature of the light source as a function of said measured voltage across said temperature sensing device, whereby the temperature of the light source is approximately equal to the temperature of said temperature sensing device due said temperature sensing device being formed in proximity to the light source in said semiconductor substrate.
Claim 13
Independent Claim
114 words
A method of measuring the temperature of a semiconductor light source, comprising the steps of: providing a semiconductor substrate; forming the semiconductor light source in said semiconductor substrate; forming a temperature sensing device in said semiconductor substrate in proximity to the light source; injecting electrical current through said temperature sensing device; measuring the voltage across said temperature sensing device; and determining the temperature of the light source as a function of said measured voltage across said temperature sensing device, whereby the temperature of the light source is approximately equal to the temperature of said temperature sensing device due said temperature sensing device being formed in proximity to the light source in said semiconductor substrate.
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| 3.5 Years (Year 4) | 1994-06-17 | 1994-12-17 | 1995-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-17 | 1998-12-17 | 1999-06-18 | $3760.00 | Window Closed / Lapsed |
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