US4215577A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Utilization of diodes as wide range responsive thermometers
Assignee: Purdue Research Foundation
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Filing: 1978-08-28
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Granted: 1980-08-05
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Expires: 1998-08-28
Abstract
Abstract A device is disclosed, and a method for construction, in which gallium arsenide phosphide diode chips are employed to produce an inexpensive thermometer that has a broad range, accurate, temperature sensitivity. The thermometer does not require recalibration to maintain accuracy and is rugged in construction. The chip described is a type commonly found in light-emitting diodes.
Inventors
- 👤 Bruce F. Griffing
- 👤 Srinivasarao A. Shivashankar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:51
CPC Classifications
G; G01; G01K; G01K7/00; G01K7/01; G01K15/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
123 words
A temperature sensing diode comprised of: an efficient heat conducting substrate with good electrical insulating capacity; a metal cathode secured to said substrate, said metal being selected so that it does not develop differential stresses in an operative range between about 1.9° K. to about 400° K., a semi-conductor chip made of gallium arsenide phosphide having light emission characteristics of an electroluminescent diode suitable for use as a temperature sensor, said chip being secured to said metal cathode; a metal anode secured to said substrate, said metal being selected so that it does not develop differential stresses in said operative range; an electrical conductor connecting said cathode and anode; and external input and output connector terminals located, respectively, on said cathode and anode.
Claim 2
Dependent Claim
123 words
A temperature sensing diode comprised of: an efficient heat conducting substrate with good electrical insulating capacity; a metal cathode secured to said substrate, said metal being selected so that it does not develop differential stresses in an operative range between about 1.9° K. to about 400° K., a semi-conductor chip made of gallium arsenide phosphide having light emission characteristics of an electroluminescent diode suitable for use as a temperature sensor, said chip being secured to said metal cathode; a metal anode secured to said substrate, said metal being selected so that it does not develop differential stresses in said operative range; an electrical conductor connecting said cathode and anode; and external input and output connector terminals located, respectively, on said cathode and anode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-08-05 | 1984-02-04 | 1984-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-08-05 | 1988-02-04 | 1988-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-08-05 | 1992-02-04 | 1992-08-05 | $7700.00 | Window Closed / Lapsed |