Method for testing semiconductor apparatus

Abstract

Abstract PURPOSE:To enable the total inspection of transient heat characteristics during actual operation of IC, by a method wherein the power to the surface part of a semiconmductor element is cut off and the temp. characteristic of voltage in a forward direction is utilized to measure the change in the temp. of a P-N junction diode in the element. CONSTITUTION:An adequate input signal 22 and load impedance 22 are connected to a test sample 21 of IC and said test sample is actually operated by the connection with a power source Vcc through a change-over switch 1. When this change-over switch 1 is changed over, the supply of power to the surface part of the semiconductor element of the sample 21 is cut off while said semiconductor element is internally connected by a constant current source 25 and an incidental internal P-N junction diode 16 due to the N-layer of the collector and the P type substrate connected to ground of an N-P-N transistor is instantaneously and forwardly biased. Because the forward direction voltage of the diode 26 has a regular negative temp. characteristics, when the change in forward direction voltage is measured by a voltmeter 27, transient heat characteristics in the element directly under the element are instantaneously measured and the total inspection of the transient heat characteristics during actual operation of power IC can be performed.

Inventors

• 👤 Shigeru Ito
• 👤 繁 伊藤

Bibliographic Details