US5393680A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MIS electrode forming process
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-07-30
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Granted: 1995-02-28
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Expires: 2011-07-30
Abstract
Abstract There is disclosed a process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium or sulfur-passivated, and then an insulation film being formed.
Inventors
- 👤 Shin-ichi Shikata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 19:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D64/00; H10D64/01; H10D64/013; H10D64/01358; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
53 words
A process for forming a MIS electrode, comprising: sulfur-passivating a predetermined area on a surface of a III-V compound semiconductor substrate; forming an insulation film on said predetermined area by ECR-CVD; applying an electrode material to said insulation film; and heat-treating said insulation film at a temperature between 380° C. and 520° C.
Claim 2
Dependent Claim
53 words
A process for forming a MIS electrode, comprising: sulfur-passivating a predetermined area on a surface of a III-V compound semiconductor substrate; forming an insulation film on said predetermined area by ECR-CVD; applying an electrode material to said insulation film; and heat-treating said insulation film at a temperature between 380° C. and 520° C.
Claim 3
Dependent Claim
24 words
A process for forming a MIS electrode according to claim 1, wherein said III-V compound semiconductor contains at least one of gallium and arsenic.
Claim 4
Dependent Claim
56 words
A process for forming a MIS electrode, comprising: sulfur-passivating a predetermined area on a surface of a III-V compound semiconductor substrate; forming an insulation film by depositing SiN by ECR-CVD on said predetermined area; applying an electrode material to said insulation film; and heat-treating said insulation film at a temperature between 380° C. and 520° C.
Claim 5
Dependent Claim
56 words
A process for forming a MIS electrode, comprising: sulfur-passivating a predetermined area on a surface of a III-V compound semiconductor substrate; forming an insulation film by depositing SiN by ECR-CVD on said predetermined area; applying an electrode material to said insulation film; and heat-treating said insulation film at a temperature between 380° C. and 520° C.
Claim 6
Dependent Claim
24 words
A process for forming a MIS electrode according to claim 3, wherein said III-V compound semiconductor contains at least one of gallium and arsenic.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-27 | 1998-08-29 | 1999-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-27 | 2002-08-29 | 2003-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-27 | 2006-08-29 | 2007-02-28 | $7700.00 | Window Closed / Lapsed |