EP0469606A2
Expired / Lapsed
EP
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A process for forming a MES electrode
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-08-01
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Granted: —
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Expires: 2011-08-01
Abstract
Abstract There is disclosed a process for forming a MES electrode by applying a metal material to a substrate of a III-V compound semiconductor, the metal material being in Schottky contact with the compound semiconductor, the process comprising: treating a surface of the substrate with a phosphoric acid-based etchant, and then sulfur or selenium-passivating the surface.
Inventors
- 👤 Shin-ichi c/o Yokohama Works of Sumitomo Shikata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 08:59
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0614; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
50 words
A process for forming a MES electrode by applying a metal material to a substrate of a III-V compound semiconductor, the metal material being in Schottky contact with the compound semiconductor, the process comprising: treating a surface of the substrate with a phosphoric acid-based etchant, and then sulfur-passivating the surface.
Claim 2
Dependent Claim
50 words
A process for forming a MES electrode by applying a metal material to a substrate of a III-V compound semiconductor, the metal material being in Schottky contact with the compound semiconductor, the process comprising: treating a surface of the substrate with a phosphoric acid-based etchant, and then sulfur-passivating the surface.
Claim 3
Dependent Claim
23 words
A process for forming a MES electrode according to claim 1, wherein the compound semiconductor contains at least one of gallium and arsenic.
Claim 4
Dependent Claim
40 words
A process for forming a MES electrode according to claim 1 or 2, wherein the treatment with a phosphoric acid-based etchant is immersion in an etchant comprising H 3 P0 4 , H 2 0 2 and H 2 0.
Claim 5
Dependent Claim
32 words
A process for forming a MES electrode according to any of claims 1 to 3, wherein the sulfur passivation is a treatment for exposing the surface of the substrate to ammonium sulfide.
Claim 6
Dependent Claim
28 words
A process for forming a MES electrode according to any of claims 1 to 3, wherein the sulfur-passivation is for immersion in ammonia sulfide solution containing excessive sulfur.
Claim 7
Dependent Claim
28 words
A process for forming a MES electrode according to any preceding claim, wherein the metal material contains any one of platinum, palladium, tungsten, tungsten silicate or tungsten aluminum.
Claim 8
Dependent Claim
21 words
A process for forming a MES electrode according to any preceding claim, wherein the metal material is applied by ECR sputter.
Claim 9
Dependent Claim
51 words
A process for forming a MES electrode by applying a metal material to a substrate of a III-V compound semiconductor, the metal material being in Schottky contact with the compound semiconductor, the process comprising: treating a surface of the substrate with a phosphoric acid-based etchant, and then selenium- passivating the surface.
Claim 10
Dependent Claim
51 words
A process for forming a MES electrode by applying a metal material to a substrate of a III-V compound semiconductor, the metal material being in Schottky contact with the compound semiconductor, the process comprising: treating a surface of the substrate with a phosphoric acid-based etchant, and then selenium- passivating the surface.
Claim 11
Dependent Claim
65 words
A process for forming a MES electrode by applying a metal material to a substrate of a III-V compound semiconductor, the metal material being in Schottky contact with the compound semiconductor, the process comprising: treating a surface of the substrate with a phosphoric acid-based etchant, and then passivating the surface with an element of group VI, preferably one having similar characteristics as sulfur or selenium.
Claim 12
Dependent Claim
65 words
A process for forming a MES electrode by applying a metal material to a substrate of a III-V compound semiconductor, the metal material being in Schottky contact with the compound semiconductor, the process comprising: treating a surface of the substrate with a phosphoric acid-based etchant, and then passivating the surface with an element of group VI, preferably one having similar characteristics as sulfur or selenium.
References Cited (Backward Citations)
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