Patent US3435860A successfully refreshed from Google Patents.
EP0469604A2
Expired / Lapsed
EP
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MIS electrode forming process
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-08-01
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Granted: —
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Expires: 2011-08-01
Abstract
Abstract There is disclosed a process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium or sulfur-passivated, and then an insulation film being formed.
Inventors
- 👤 Shin-ichi c/o Yokohama Works of Sumitomo Shikata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 02:25
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D64/00; H10D64/01; H10D64/013; H10D64/01358; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
47 words
A process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and sulfur-passivated, and then an insulation film being formed.
Claim 2
Dependent Claim
47 words
A process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and sulfur-passivated, and then an insulation film being formed.
Claim 3
Dependent Claim
39 words
A process for forming a MIS electrode according to claim 1, wherein the treatment with a phosphoric acid-based etchant is immersion in an etchant comprising H 3 P0 4 , H 2 0 2 , and H 2 0.
Claim 4
Dependent Claim
24 words
A process for forming a MIS electrode according to claim 1, wherein the sulfur passivation is immersion in ammonium sulfide solution containing excessive sulfur.
Claim 5
Dependent Claim
25 words
A process for forming a MIS electrode of any preceding claim, wherein the insulation film is formed by ECR-CVD, by sputtering, or by pyrolytic CVD.
Claim 6
Dependent Claim
24 words
A process for forming a MIS electrode of any preceding claim, wherein the insulation film comprises SiNx and annealed at 380 to 520 °C.
Claim 7
Dependent Claim
48 words
A process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, sulfur-passivating a surface of the substrate prior to the formation of the insulation film; and the insulation film being formed by ECR-CVD.
Claim 8
Dependent Claim
48 words
A process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, sulfur-passivating a surface of the substrate prior to the formation of the insulation film; and the insulation film being formed by ECR-CVD.
Claim 9
Dependent Claim
32 words
A process for forming a MIS electrode according to claim 6, wherein the insulation film is formed by depositing SiN by ECR-CVD, and then heat-treating the SiN at 380 to 520 C.
Claim 10
Dependent Claim
19 words
A process of any preceding claim, wherein the III-V compound semiconductor contains at least either of gallium and arsenic.
Claim 11
Dependent Claim
47 words
A process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium-passivated, and then an insulation film being formed.
Claim 12
Dependent Claim
47 words
A process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium-passivated, and then an insulation film being formed.
Claim 13
Dependent Claim
59 words
A process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and passivated by a group VI element having similar characteristics as sulfur, preferably selenium, and then an insulation film being formed.
Claim 14
Dependent Claim
59 words
A process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and passivated by a group VI element having similar characteristics as sulfur, preferably selenium, and then an insulation film being formed.
References Cited (Backward Citations)
No citation records indexed.
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