US5384797A — Monolithic multi-wavelength laser diode array

Claim 1

Independent Claim 164 words

A light emitting device comprising, a substrate, a plurality of contiguous semiconductor layers disposed on said substrate, said layers forming a diode heterostructure optical gain medium with a composite active region of at least two adjacent lower bandgap layers together sandwiched between higher bandgap barrier layers defined in at least a portion of said heterostructure gain medium, said at least two adjacent lower bandgap layers of said composite active region having been formed from adjacent quantum well layers that were subsequently at least partially intermixed in at least one of their atomic species to a selected degree in at least one area of said composite active region, the degree of intermixing between said quantum well layers in said at least one area of said composite active region determining, in at least one of the resultant adjacent lower bandgap layers formed by the intermixing, a wavelength band for generation of lightwaves propagating in that area, and means for pumping each area of said active region.

Claim 2

Dependent Claim 164 words

A light emitting device comprising, a substrate, a plurality of contiguous semiconductor layers disposed on said substrate, said layers forming a diode heterostructure optical gain medium with a composite active region of at least two adjacent lower bandgap layers together sandwiched between higher bandgap barrier layers defined in at least a portion of said heterostructure gain medium, said at least two adjacent lower bandgap layers of said composite active region having been formed from adjacent quantum well layers that were subsequently at least partially intermixed in at least one of their atomic species to a selected degree in at least one area of said composite active region, the degree of intermixing between said quantum well layers in said at least one area of said composite active region determining, in at least one of the resultant adjacent lower bandgap layers formed by the intermixing, a wavelength band for generation of lightwaves propagating in that area, and means for pumping each area of said active region.

Claim 3

Dependent Claim 52 words

The device of claim 1 wherein said at least two adjacent lower bandgap layers of said composite active region have been formed from adjacent group III-V compound semiconductor material quantum well layers of dissimilar composition but similar bandgap, the resultant adjacent lower bandgap layers also having dissimilar composition but more dissimilar bandgaps.

Claim 4

Dependent Claim 35 words

The device of claim 2 wherein said at least one partially intermixed area of said at least two adjacent lower bandgap layers of said active region is intermixed in its constituent group III atomic species.

Claim 5

Dependent Claim 35 words

The device of claim 2 wherein said at least one partially intermixed area of said at least two adjacent lower bandgap layers of said active region is intermixed in its constituent group V atomic species.

Claim 6

Dependent Claim 51 words

The device of claim 1 wherein said at least one area of said composite active region is optically coupled to a light source to receive therefrom lightwaves having a wavelength within said wavelength band of said area, said optical gain medium thereby forming an optical power amplifier for said received lightwaves.

Claim 7

Dependent Claim 53 words

The device of claim 1 wherein plural areas of said composite active region are optically coupled to at least one light source to receive therefrom lightwaves having one or more wavelengths corresponding to the wavelength band in each said area, said optical gain medium thereby forming an amplifier array for said received lightwaves.

Claim 8

Dependent Claim 16 words

The device of claim 6 wherein said at least one light source is a laser array.

Claim 9

Dependent Claim 22 words

The laser diode array of claim 6 wherein said means for pumping is individually addressable of each area of said active region.

Claim 10

Dependent Claim 37 words

The device of claim 1 further comprising resonant cavity means for providing feedback for each area of said composite active region of lightwaves generated in each said area, said optical gain medium thereby forming a laser oscillator.

Claim 11

Dependent Claim 35 words

The device of claim 9 further comprising lateral waveguiding means defined in plural areas of said composite active region for guiding lightwave propagation within said areas, said optical gain medium thereby forming a laser array.

Claim 12

Dependent Claim 36 words

The device of claim 10 wherein different areas of said composite active region have selected different degrees of intermixing such that at least two guided areas of said active region generate different wavelengths of laser light.

Claim 13

Dependent Claim 42 words

The laser diode array of claim 10 wherein said cavity means comprises front and rear arrays of periodic reflectors, each reflector tuned to feedback lightwaves having the same wavelength as said light emission wavelength of a corresponding area of said active region.

Claim 14

Dependent Claim 22 words

The laser diode array of claim 10 wherein said means for pumping is individually addressable of each area of said active region.

Claim 15

Dependent Claim 133 words

The device of claim 1 wherein said optical gain medium includes a laser oscillator section defined in a rear portion of the medium and an optical power amplifier section defined in a front portion of the medium in tandem with the laser oscillator section, said laser oscillator section having resonant cavity means for providing feedback for each area in the rear portion of said composite active region of lightwaves generated in each said area, areas of said amplifier section in the front portion of said composite active region being optically coupled to corresponding areas in said rear portions to receive lightwaves from said laser oscillator section, said corresponding areas in said front and rear portions of said active medium having substantially the same degree of intermixing and substantially the same amplification wavelength band.

Claim 16

Dependent Claim 35 words

The device of claim 1 further comprising means disposed on said substrate in front of said optical gain medium for doubling the frequency of light emitted from at least one area of said active region.

Claim 17

Dependent Claim 36 words

The laser diode array of claim 15 wherein said means for doubling the frequency of light comprises a ferroelectric waveguide array formed on said substrate, said ferroelectric waveguide array having at least one periodically poled waveguide.

Claim 18

Dependent Claim 124 words

A multi-wavelength laser diode array comprising, a substrate, a plurality of contiguous semiconductor layers forming a heterostructure disposed on said substrate, said heterostructure including at least two adjacent lower bandgap layers together sandwiched between higher bandgap barrier layers forming a composite active region, said at least two adjacent lower bandgap layers having been formed from adjacent quantum well layers that were subsequently partially intermixed in at least one of their atomic species in at least one area of said active region to have a different light emission wavelength than other areas of said active region, means for pumping each area of said active region, and cavity means for providing feedback for each said area of said active region of lightwaves generated in said areas.

Claim 19

Dependent Claim 124 words

A multi-wavelength laser diode array comprising, a substrate, a plurality of contiguous semiconductor layers forming a heterostructure disposed on said substrate, said heterostructure including at least two adjacent lower bandgap layers together sandwiched between higher bandgap barrier layers forming a composite active region, said at least two adjacent lower bandgap layers having been formed from adjacent quantum well layers that were subsequently partially intermixed in at least one of their atomic species in at least one area of said active region to have a different light emission wavelength than other areas of said active region, means for pumping each area of said active region, and cavity means for providing feedback for each said area of said active region of lightwaves generated in said areas.

Claim 20

Dependent Claim 54 words

The laser diode array of claim 17 wherein said at least two adjacent lower bandgap layers of said composite active region have been formed from adjacent group III-V compound semiconductor material quantum well layers of dissimilar composition but similar bandgap, the resultant adjacent lower bandgap layers also having dissimilar composition but with dissimilar bandgaps.

Claim 21

Dependent Claim 37 words

The laser diode array of claim 18 wherein said at least one partially intermixed area of said at least two adjacent lower bandgap layers of said active region is intermixed in its constituent group III atomic species.

Claim 22

Dependent Claim 37 words

The laser diode array of claim 18 wherein said at least one partially intermixed area of said at least two adjacent lower bandgap layers of said active region is intermixed in its constituent group V atomic species.

Claim 23

Dependent Claim 24 words

The laser diode array of claim 17 wherein said active region has a plurality of laterally spaced apart areas with different light emission wavelengths.

Claim 24

Dependent Claim 42 words

The laser diode array of claim 17 wherein said cavity means comprises front and rear arrays of periodic reflectors, each reflector tuned to feedback lightwaves having the same wavelength as said light emission wavelength of a corresponding area of said active region.

Claim 25

Dependent Claim 22 words

The laser diode array of claim 17 wherein said means for pumping is individually addressable of each area of said active region.

Claim 26

Dependent Claim 45 words

The laser diode array of claim 17 further comprising harmonic generating means integrally formed on said substrate in front of said cavity means for converting the frequency of light emitted from at least one area of said active region to a harmonic of said frequency.

Claim 27

Dependent Claim 23 words

The laser diode array of claim 24 wherein said harmonic generating means comprises an electrically polarized ferroelectric waveguide array formed on said substrate.

Claim 28

Dependent Claim 43 words

The laser diode array of claim 25 wherein said ferroelectric waveguide array is composed of a three layer Ca x Sr 1-x F 2 /LiTaO 3 /Ca x Sr 1-x F 2 material sandwich deposited on a (111) GaAs surface of said substrate.

Claim 29

Dependent Claim 32 words

The laser diode array of claim 25 wherein said ferroelectric waveguide array is composed of a three layer MgO/BaTiO 3 /MgO material sandwich deposited on a (100) GaAs surface of said substrate.

Claim 30

Dependent Claim 66 words

The laser diode array of claim 25 wherein said ferroelectric waveguide array is composed of a ferroelectric material waveguide core layer sandwiched between a lower cladding layer formed epitaxially on said substrate and an upper cladding formed over said waveguide core layer, said lower cladding layer and said upper cladding being composed of material having a lower refractive index than said ferroelectric material waveguide core layer.

Claim 31

Dependent Claim 19 words

The laser diode array of claim 25 wherein said ferroelectric waveguide array has at least one periodically poled waveguide.

Claim 32

Dependent Claim 22 words

The laser diode array of claim 29 wherein said at least one periodically poled waveguide has a first-order quasi-phase matched domain period.

Claim 33

Dependent Claim 22 words

The laser diode array of claim 29 wherein said at least one periodically poled waveguide has a third-order quasi-phase matched domain period.

Claim 34

Dependent Claim 202 words

A monolithic multi-wavelength laser diode array comprising a semiconductor material body having a plurality of contiguous semiconductor layers forming a heterostructure, said heterostructure including a composite active region with two adjacent quantum well layers of dissimilar materials sandwiched between two higher bandgap confinement layers, said heterostructure also including means for guiding propagation of lightwaves within an array of laterally spaced apart regions, said composite active region having been partially disordered such that constituent atomic species of said two adjacent quantum well layers have been mixed to different specified degrees in said spaced apart regions of said array, each of said spaced apart regions characterized by a gain wavelength band that is different from that of at least one other spaced apart region in said array, excitation means for pumping said partially disordered composite active region so that said active region in each of said spaced apart regions of said array generates lightwaves having a wavelength within said characteristic gain wavelength band that is different than a wavelength of lightwaves generated by said active region in at least one other spaced apart region of said array, and resonant cavity means for providing feedback of lightwaves propagating in said array of spaced apart regions.

Claim 35

Dependent Claim 202 words

A monolithic multi-wavelength laser diode array comprising a semiconductor material body having a plurality of contiguous semiconductor layers forming a heterostructure, said heterostructure including a composite active region with two adjacent quantum well layers of dissimilar materials sandwiched between two higher bandgap confinement layers, said heterostructure also including means for guiding propagation of lightwaves within an array of laterally spaced apart regions, said composite active region having been partially disordered such that constituent atomic species of said two adjacent quantum well layers have been mixed to different specified degrees in said spaced apart regions of said array, each of said spaced apart regions characterized by a gain wavelength band that is different from that of at least one other spaced apart region in said array, excitation means for pumping said partially disordered composite active region so that said active region in each of said spaced apart regions of said array generates lightwaves having a wavelength within said characteristic gain wavelength band that is different than a wavelength of lightwaves generated by said active region in at least one other spaced apart region of said array, and resonant cavity means for providing feedback of lightwaves propagating in said array of spaced apart regions.

Claim 36

Dependent Claim 27 words

The laser diode array of claim 32 wherein said resonant cavity means includes at least one grating reflector associated with each spaced apart region of said array.

Claim 37

Dependent Claim 44 words

The laser diode array of claim 33 wherein each said grating reflector is tuned to reflect the lightwaves generated by the active region that have a wavelength characteristic of the particular spaced apart region of the array with which that grating reflector is associated.

Claim 38

Dependent Claim 43 words

The laser diode array of claim 32 wherein said active region and said array of spaced apart regions extend beyond said resonant cavity means to form a power amplifier integral with the laser array for amplifying lightwaves emitted from said resonant cavity means.

Claim 39

Dependent Claim 34 words

The laser diode array of claim 35 further comprising harmonic generation means receiving said amplified lightwaves for doubling the frequencies of lightwaves from at least one of said spaced apart regions of said array.

Claim 40

Dependent Claim 23 words

The laser diode array of claim 36 wherein said harmonic generation means comprises ferroelectric material waveguides monolithically integrated with said semiconductor material body.

Claim 41

Dependent Claim 19 words

The laser diode array of claim 37 wherein at least one of said ferroelectric material waveguides is periodically poled.

Claim 42

Dependent Claim 26 words

The laser diode array of claim 32 wherein said active region has been formed from an InGaP quantum well layer and a GaAlAs quantum well layer.

Claim 43

Dependent Claim 50 words

The laser diode array of claim 39 wherein said In, Ga and Al (Group III) atoms in said quantum well layers have been mixed to different degrees, said active region thereby comprising adjacent InGaAlP and InGaAlAs quantum well layers of varying composition in different spaced apart regions of said array.

Claim 44

Dependent Claim 49 words

The laser diode array of claim 39 wherein said As and P (Group V) atoms in said quantum well layers have been mixed to different degrees, said active region thereby comprising adjacent InGaAsP and GaAlAsP quantum well layers of varying composition in different spaced apart regions of said array.

Claim 45

Dependent Claim 34 words

The laser diode array of claim 32 wherein said excitation means comprises a plurality of laterally spaced apart, individually addressable means for injecting current into each of said spaced apart regions of said array.

Claim 46

Dependent Claim 145 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, wherein said diode laser is a multiwavelength laser array having a plurality of laterally spaced apart light emitting elements with at least two light emitting elements emitting light of different frequencies, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator being a ferroelectric waveguide array having a plurality of laterally spaced apart ferroelectric waveguides optically coupled to corresponding light emitting elements of said laser array for converting the different frequencies of light received from said multiwavelength laser array to harmonics of those frequencies, wherein at least one ferroelectric waveguide of said ferroelectric waveguide array is periodically poled with a domain period corresponding to the frequency of light received from the corresponding light emitting element of the laser array.

Claim 47

Dependent Claim 145 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, wherein said diode laser is a multiwavelength laser array having a plurality of laterally spaced apart light emitting elements with at least two light emitting elements emitting light of different frequencies, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator being a ferroelectric waveguide array having a plurality of laterally spaced apart ferroelectric waveguides optically coupled to corresponding light emitting elements of said laser array for converting the different frequencies of light received from said multiwavelength laser array to harmonics of those frequencies, wherein at least one ferroelectric waveguide of said ferroelectric waveguide array is periodically poled with a domain period corresponding to the frequency of light received from the corresponding light emitting element of the laser array.

Claim 48

Dependent Claim 18 words

The monolithic device of claim 43 wherein each periodically poled waveguide has a first-order quasi-phase matched domain period.

Claim 49

Dependent Claim 18 words

The monolithic device of claim 43 wherein each periodically poled waveguide has a third-order quasi-phase matched domain period.

Claim 50

Dependent Claim 207 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, wherein said diode laser is a multiwavelength laser array having a plurality of laterally spaced apart light emitting elements with at least two light emitting elements emitting light of different frequencies, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator being a ferroelectric waveguide array having a plurality of laterally spaced apart ferroelectric waveguides optically coupled to corresponding light emitting elements of said laser array for converting the different frequencies of light received from said multiwavelength laser array to harmonics of those frequencies, wherein said ferroelectric waveguide array is composed of ferroelectric material waveguide core layer sandwiched between a lower cladding layer formed epitaxially on said substrate and an upper cladding formed over said waveguide core layer, said lower cladding layer and said upper cladding being composed of material having a lower refractive index than said ferroelectric material waveguide core layer, and wherein said material of the ferroelectric waveguide array is composed of a three layer Ca x Sr 1-x F 2 /LiTaO 3 /Ca x Sr 1-x F 2 sandwich deposited on a (111) GaAs surface of said substrate.

Claim 51

Dependent Claim 207 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, wherein said diode laser is a multiwavelength laser array having a plurality of laterally spaced apart light emitting elements with at least two light emitting elements emitting light of different frequencies, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator being a ferroelectric waveguide array having a plurality of laterally spaced apart ferroelectric waveguides optically coupled to corresponding light emitting elements of said laser array for converting the different frequencies of light received from said multiwavelength laser array to harmonics of those frequencies, wherein said ferroelectric waveguide array is composed of ferroelectric material waveguide core layer sandwiched between a lower cladding layer formed epitaxially on said substrate and an upper cladding formed over said waveguide core layer, said lower cladding layer and said upper cladding being composed of material having a lower refractive index than said ferroelectric material waveguide core layer, and wherein said material of the ferroelectric waveguide array is composed of a three layer Ca x Sr 1-x F 2 /LiTaO 3 /Ca x Sr 1-x F 2 sandwich deposited on a (111) GaAs surface of said substrate.

Claim 52

Dependent Claim 41 words

The monolithic device of claim 46 wherein said Ca x Sr 1-x F 2 lower cladding layer of said three layer sandwich has a graded composition which is lattice-matched to said GaAs substrate and to said LiTaO 3 waveguide core layer.

Claim 53

Dependent Claim 196 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, wherein said diode laser is a multiwavelength laser array having a plurality of laterally spaced apart light emitting elements with at least two light emitting elements emitting light of different frequencies, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator being a ferroelectric waveguide array having a plurality of laterally spaced apart ferroelectric waveguides optically coupled to corresponding light emitting elements of said laser array for converting the different frequencies of light received from said multiwavelength laser array to harmonics of those frequencies, wherein said ferroelectric waveguide array is composed of a ferroelectric material waveguide core layer sandwiched between a lower cladding layer formed epitaxially on said substrate and an upper cladding formed over said waveguide core layer, said lower cladding layer and said upper cladding being composed of material having a lower refractive index than said ferroelectric material waveguide core layer, and wherein said material of the ferroelectric waveguide array is composed of three layer MgO/BaTiO 3 /MgO sandwiched deposited on a (100) GaAs surface of said substrate.

Claim 54

Dependent Claim 196 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, wherein said diode laser is a multiwavelength laser array having a plurality of laterally spaced apart light emitting elements with at least two light emitting elements emitting light of different frequencies, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator being a ferroelectric waveguide array having a plurality of laterally spaced apart ferroelectric waveguides optically coupled to corresponding light emitting elements of said laser array for converting the different frequencies of light received from said multiwavelength laser array to harmonics of those frequencies, wherein said ferroelectric waveguide array is composed of a ferroelectric material waveguide core layer sandwiched between a lower cladding layer formed epitaxially on said substrate and an upper cladding formed over said waveguide core layer, said lower cladding layer and said upper cladding being composed of material having a lower refractive index than said ferroelectric material waveguide core layer, and wherein said material of the ferroelectric waveguide array is composed of three layer MgO/BaTiO 3 /MgO sandwiched deposited on a (100) GaAs surface of said substrate.

Claim 55

Dependent Claim 172 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, wherein said diode laser is multiwavelength laser array having a plurality of laterally spaced apart light emitting elements with at least two light emitting elements emitting light of different wavelengths, and wherein said multiwavelength diode laser array has a composite active region of at least two adjacent lower bandgap semiconductor layers which have been at least partially intermixed in at least one of their atomic species to different selected degrees in plural areas of said composite active region and which are together sandwiched between higher bandgap barrier layers, the degree of intermixing in each area determining a wavelength band for amplification of lightwaves propagating in that area, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator including at least one ferroelectric waveguide optically coupled to said diode laser for converting the frequency of light received from said diode laser to a harmonic of said frequency.

Claim 56

Dependent Claim 172 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, wherein said diode laser is multiwavelength laser array having a plurality of laterally spaced apart light emitting elements with at least two light emitting elements emitting light of different wavelengths, and wherein said multiwavelength diode laser array has a composite active region of at least two adjacent lower bandgap semiconductor layers which have been at least partially intermixed in at least one of their atomic species to different selected degrees in plural areas of said composite active region and which are together sandwiched between higher bandgap barrier layers, the degree of intermixing in each area determining a wavelength band for amplification of lightwaves propagating in that area, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator including at least one ferroelectric waveguide optically coupled to said diode laser for converting the frequency of light received from said diode laser to a harmonic of said frequency.

Claim 57

Dependent Claim 122 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, said diode laser having a quantum well active region structure with at least two adjacent lower bandgap layers together sandwiched between higher bandgap barrier layers, said adjacent lower bandgap layers having been at least partially intermixed in at least one of their constituent atomic species, the degree of intermixing determining an emission wavelength for said diode laser, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator including at least one ferrroelectric waveguide optically coupled to said diode laser for converting the frequency of light received from said diode laser to a harmonic of said frequency.

Claim 58

Dependent Claim 122 words

A monolithic frequency-converted laser comprising, a substrate, a diode laser formed on said substrate, said diode laser having a quantum well active region structure with at least two adjacent lower bandgap layers together sandwiched between higher bandgap barrier layers, said adjacent lower bandgap layers having been at least partially intermixed in at least one of their constituent atomic species, the degree of intermixing determining an emission wavelength for said diode laser, and a harmonic generator composed of ferroelectric material integrally formed on the same said substrate as said diode laser, said harmonic generator including at least one ferrroelectric waveguide optically coupled to said diode laser for converting the frequency of light received from said diode laser to a harmonic of said frequency.

Claim 59

Independent Claim 134 words

A method of making a device for emitting light comprising, disposing a plurality of semiconductor layers on a substrate to form a diode heterostructure with a composite active region, said composite active region including adjacent quantum well layers together sandwiched between higher bandgap layers, at least partially intermixing at least one constituent atomic species of said adjacent quantum well layers to a selected degree in at least one area of said composite active region to form two adjacent lower bandgap layers between said higher bandgap layers, the degree of intermixing between said adjacent quantum well layers determining, in at least one of the resultant adjacent lower bandgap layers, a wavelength band for generation of lightwaves in that area, and providing means for exciting each area of said active region to produce said lightwave generation.

Claim 60

Independent Claim 134 words

A method of making a device for emitting light comprising, disposing a plurality of semiconductor layers on a substrate to form a diode heterostructure with a composite active region, said composite active region including adjacent quantum well layers together sandwiched between higher bandgap layers, at least partially intermixing at least one constituent atomic species of said adjacent quantum well layers to a selected degree in at least one area of said composite active region to form two adjacent lower bandgap layers between said higher bandgap layers, the degree of intermixing between said adjacent quantum well layers determining, in at least one of the resultant adjacent lower bandgap layers, a wavelength band for generation of lightwaves in that area, and providing means for exciting each area of said active region to produce said lightwave generation.

Claim 61

Dependent Claim 44 words

The method of claim 51 wherein said adjacent quantum well layers are of dissimilar composition but similar bandgap, and the resultant adjacent lower bandgap layers formed by said intermixing also have dissimilar composition but more dissimilar bandgaps than that of said quantum well layers.

Claim 62

Dependent Claim 28 words

The method of claim 52 wherein said adjacent quantum well layers are group III-v compound semiconductor material layers and are intermixed in their constituent group III atomic species.

Claim 63

Dependent Claim 28 words

The method of claim 52 wherein said adjacent quantum well layers are group III-V compound semiconductor material layers and are intermixed in their constituent group V atomic species.

Claim 64

Dependent Claim 40 words

The method of claim 52 wherein said adjacent quantum well layers are composed of InGaP and GaAlAs and the resultant adjacent lower bandgap layers formed by said intermixing are a reduced bandgap InGaAlAs layer and an increased bandgap InGaAlP layer.

Claim 65

Dependent Claim 40 words

The method of claim 54 wherein said adjacent quantum well layers are composed of InGaP and GaAlAs and the resultant adjacent lower bandgap layers formed by said intermixing are a reduced bandgap GaAlAsP layer and an increased bandgap InGaAsP layer.

Claim 66

Dependent Claim 45 words

The method of claim 51 wherein different areas of said composite active region are intermixed to different degrees such that said different areas form at least two spaced apart active guided areas which when excited by said provided exciting means generate different wavelengths of light.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1998-01-23	1998-07-25	1999-01-24	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2002-01-23	2002-07-25	2003-01-24	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2006-01-23	2006-07-25	2007-01-24	$7700.00	Window Closed / Lapsed

Monolithic multi-wavelength laser diode array

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