Method of manufacturing a semiconductor structure suitable for producing a multi-wavelength laser effect

Claim 1

A method of manufacturing a semiconductor structure, in particular a structure suitable for producing a laser effect, the method being characterized in that it comprises the following steps: (a) a monocrystaline double heterostructure stack is deposited on a substrate (S), said stack begin constituted by active layers (CA) having different compositions and having light radiating properties, each of said layers being sandwiched between two confinement layers (CC) having a microcrystal lattice size adjacent to that of the active layers, with all of said layers having the same conductivity type; (b) the top of the stack is selectively etched in parallel strips which are adjacent to one another in order to lay bare confinement layers (CC) at different depths, at least on two adjacent strips, with the confinement layers (CC) thus laid bare defining parallel terraces (T1, T2, T3) separated from one another by transitions (M12, M23); (c) a contact layer (CP) is formed on said terraces; (d) an opposite conductivity type region (R1, R2, R3) is formed in the strip included in each terrace by inserting impurities through the contact layer, said impurities corresponding to the same conductivity type as the contact layer and said region extending through the top confinement layer (CC2, CC3, CC4) to the vicinity of the active layer therebeneath (CA1, CA2, CA3) in order to constitute a P-N junction therewith (J1, J2, J3); (e) individual metal contacts (DM1, Dm2, Dm3) are deposited on each opposite conductivity type region; (f) a common metal contact (DMS) is deposited on the substrate; (g) the opposite conductivity type regions are electrically isolated from one another (V10, V21, V32) at the transitions therebetween, in order to form semiconductor structure stripes; and (h) the opposite ends of said stripes are optically prepared transversely to the long dimension of the terraces.

Claim 2

A method of manufacturing a semiconductor structure, in particular a structure suitable for producing a laser effect, the method being characterized in that it comprises the following steps: (a) a monocrystaline double heterostructure stack is deposited on a substrate (S), said stack begin constituted by active layers (CA) having different compositions and having light radiating properties, each of said layers being sandwiched between two confinement layers (CC) having a microcrystal lattice size adjacent to that of the active layers, with all of said layers having the same conductivity type; (b) the top of the stack is selectively etched in parallel strips which are adjacent to one another in order to lay bare confinement layers (CC) at different depths, at least on two adjacent strips, with the confinement layers (CC) thus laid bare defining parallel terraces (T1, T2, T3) separated from one another by transitions (M12, M23); (c) a contact layer (CP) is formed on said terraces; (d) an opposite conductivity type region (R1, R2, R3) is formed in the strip included in each terrace by inserting impurities through the contact layer, said impurities corresponding to the same conductivity type as the contact layer and said region extending through the top confinement layer (CC2, CC3, CC4) to the vicinity of the active layer therebeneath (CA1, CA2, CA3) in order to constitute a P-N junction therewith (J1, J2, J3); (e) individual metal contacts (DM1, Dm2, Dm3) are deposited on each opposite conductivity type region; (f) a common metal contact (DMS) is deposited on the substrate; (g) the opposite conductivity type regions are electrically isolated from one another (V10, V21, V32) at the transitions therebetween, in order to form semiconductor structure stripes; and (h) the opposite ends of said stripes are optically prepared transversely to the long dimension of the terraces.