Semiconductor laser array including lasers with reflecting means having different wavelength selection properties

Claim 2

A semiconductor laser array comprising a plurality of lasers having, within an active layer, a quantum well structure with at least two quantum well levels for generating, respectively and independently of each other, laser light beams of mutually different oscillation wavelengths and reflecting means associated with each of said quantum well levels and having wavelength selection properties corresponding to each of said mutually different oscillation wavelengths.

Claim 3

A semiconductor laser array according to claim 1, wherein said reflecting means includes diffraction gratings respectively provided for said semiconductor lasers, said diffraction gratings having different grating pitches.

Claim 4

A semiconductor laser array according to claim 2, wherein the pitch of one of said diffraction gratings is Λ i , the wavelength of oscillation effected by the corresponding one of said semiconductor lasers is λ i , the equivalent diffractive index of said corresponding one of said lasers is n eff (i), the diffraction order is integer l, and i=1, 2, . . . , and the following equation is satisfied: ##EQU2##

Claim 5

A semiconductor laser array according to claim 1, wherein said reflecting means includes reflecting films having different spectral reflectance characteristics and coated over end surfaces of said semiconductor lasers at least on one side thereof.

Claim 6

A semiconductor laser array according to claim 4, wherein each of said reflecting films has a higher reflectance with respect to the wavelength of oscillation effected by a corresponding one of said semiconductor lasers.

Claim 7

A semiconductor laser array according to claim 1, wherein said active layer has a single quantum well structure having one quantum well.

Claim 8

A semiconductor laser array according to claim 6, wherein said quantum well has a plurality of quantum levels corresponding to the oscillation wavelengths of said lasers.

Claim 9

A semiconductor laser array according to claim 1, wherein said active layer has a multiple quantum well structure.

Claim 10

A semiconductor laser array according to claim 8, wherein said active layer includes a plurality of quantum wells respectively having quantum levels corresponding to the oscillation wavelengths of said lasers.

Claim 11

A semiconductor laser array according to claim 9, wherein said quantum wells have equal compositions and different widths.

Claim 12

A semiconductor laser array according to claim 9, wherein said quantum wells have different compositions and equal widths.

Claim 13

A semiconductor laser array according to claim 9, wherein said quantum wells have different compositions and different widths.

Claim 14

A semiconductor laser array comprising: a first semiconductor laser having, within an active layer, a quantum well structure with at least two quantum levels, said first semiconductor laser being constructed to emit light having a first wavelength; a second semiconductor laser having, within an active layer, a quantum well structure with at least two quantum levels, said second semiconductor laser being constructed to emit light having a second wavelength, the active layer of said second semiconductor laser being formed together with said first semiconductor laser in a substrate in a monolithic construction; first reflecting means provided for said first semiconductor laser, said first reflecting means being constructed to reflect light having said first wavelength with a reflectance higher than that with which said first reflecting means reflects light having said second wavelength; and second reflecting means provided for said second semiconductor laser, said second reflecting means being constructed to reflect light having said second wavelength with a reflectance higher than that with which said second reflecting means reflects light having said first wavelength.

Claim 15

A semiconductor laser array comprising: a first semiconductor laser having, within an active layer, a quantum well structure with at least two quantum levels, said first semiconductor laser being constructed to emit light having a first wavelength; a second semiconductor laser having, within an active layer, a quantum well structure with at least two quantum levels, said second semiconductor laser being constructed to emit light having a second wavelength, the active layer of said second semiconductor laser being formed together with said first semiconductor laser in a substrate in a monolithic construction; first reflecting means provided for said first semiconductor laser, said first reflecting means being constructed to reflect light having said first wavelength with a reflectance higher than that with which said first reflecting means reflects light having said second wavelength; and second reflecting means provided for said second semiconductor laser, said second reflecting means being constructed to reflect light having said second wavelength with a reflectance higher than that with which said second reflecting means reflects light having said first wavelength.

Claim 16

A semiconductor laser array according to claim 13, wherein said reflecting means include first and second diffraction gratings respectively provided for said first and second semiconductor lasers and having mutually different pitches.

Claim 17

A semiconductor laser array according to claim 14, wherein if the pitches of said first and second diffraction gratings are respectively Λ 1 and Λ 2 , said first and second wavelengths are respectively λ 1 and λ 2 , the equivalent diffractive indexes of said first and second semiconductor lasers are n eff (1) and n eff (2), and the diffraction order is an integer l, the following equations are satisfied: ##EQU3##

Claim 18

A semiconductor laser array according to claim 13, wherein said reflecting means include reflecting films having mutually different spectral reflectance characteristics and coated over end surfaces of said first and second semiconductor lasers at least on one side thereof.

Claim 19

A semiconductor laser array according to claim 13, wherein at least one of said active layers has a single quantum well structure having one quantum well.

Claim 20

A semiconductor laser array according to claim 17, wherein said one quantum well has first and second quantum levels corresponding to said first and second wavelengths.

Claim 21

A semiconductor laser array according to claim 13, wherein at least one of said active layers has a multiple quantum well structure.

Claim 22

A semiconductor laser array according to claim 19, wherein said one active layer includes a first and second quantum wells respectively having quantum levels corresponding to said first and second wavelengths.

Claim 23

A semiconductor laser array according to claim 20, wherein said first and second quantum wells have equal compositions and different widths.

Claim 24

A semiconductor laser array according to claim 20, wherein said first and second quantum wells have different compositions and equal widths.

Claim 25

A semiconductor laser array according to claim 20, wherein said first and second quantum wells have different compositions and different widths.