US4896328A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ridge waveguide-type semiconductor laser having a current recombination layer and an optical waveguide layer
Assignee: Canon Inc
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Filing: 1988-12-15
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Granted: 1990-01-23
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Expires: 2008-12-15
Abstract
Abstract A ridge waveguide-type semiconductor laser comprises a current recombination layer which generates light, and an optical waveguide layer to which the light generated at the recombination layer is coupled. A belt-like projection is formed by etching at least a part of the optical waveguide layer in the direction of its thickness at both opposing side regions up to a central region in the direction of the width of the laser.
Inventors
- 👤 Yoshinobu Sekiguchi
- 👤 Sotomitsu Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:47
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/20; H01S5/22
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
166 words
In a semiconductor laser, an operative structure comprising: a substrate; a current recombination layer formed on said substrate, said recombination layer generating light by recombining injected current; an optical waveguide layer formed on said recombination layer across a width of said recombination layer and having a layer thickness, the light generated at said recombination layer being coupled to said optical waveguide layer, and at least a part of said optical waveguide layer being removed by etching in the direction of the layer thickness, at two opposing side regions up to a central region in the direction of the width of the recombination layer, in order to form a belt-like projection; a separation layer which is provided between said recombination layer and said optical waveguide layer, and which has a lower refractive index than refractive indices of said recombination layer and said optical waveguide layer; and a pair of electrodes for providing current to said combination layer, said electrodes being mounted to respective surfaces of the laser.
Claim 2
Dependent Claim
166 words
In a semiconductor laser, an operative structure comprising: a substrate; a current recombination layer formed on said substrate, said recombination layer generating light by recombining injected current; an optical waveguide layer formed on said recombination layer across a width of said recombination layer and having a layer thickness, the light generated at said recombination layer being coupled to said optical waveguide layer, and at least a part of said optical waveguide layer being removed by etching in the direction of the layer thickness, at two opposing side regions up to a central region in the direction of the width of the recombination layer, in order to form a belt-like projection; a separation layer which is provided between said recombination layer and said optical waveguide layer, and which has a lower refractive index than refractive indices of said recombination layer and said optical waveguide layer; and a pair of electrodes for providing current to said combination layer, said electrodes being mounted to respective surfaces of the laser.
Claim 3
Dependent Claim
26 words
A semiconductor laser according to claim 1, wherein said recombination layer has a refractive index which is substantially equal to that of said optical waveguide layer.
Claim 4
Dependent Claim
24 words
A semiconductor laser according to claim 1, wherein said recombination layer has a refractive index slightly higher than that of said optical waveguide layer.
Claim 5
Dependent Claim
28 words
A semiconductor laser according to claim 1, wherein said optical waveguide layer is completley removed at both said opposed side regions in the direction of the layer thickness.
Claim 6
Dependent Claim
32 words
A semiconductor laser according to claim 1, wherein the width of said belt-like projection is set so that a far field pattern of the light which the laser emits is nearly circular.
Claim 7
Dependent Claim
28 words
A semiconductor laser according to claim 1, wherein said projection includes an apex region and one of said electrodes electrically contacts only said apex region of said projection.
Claim 8
Dependent Claim
53 words
A semiconductor laser according to claim 1 further comprising: a first clad layer provided between said substrate and said recombination layer; and a second clad layer provided on said optical waveguide layer; said first and second clad layers having refractive indices lower than those of said recombination layer and said optical waveguide layer.
Claim 9
Dependent Claim
21 words
A semiconductor laser according to claim 7 further comprising: a buffer layer provided between said substrate and and first clad layer.
Claim 10
Dependent Claim
18 words
A semiconductor laser according to claim 7 further comprising: a cap layer provided on said second clad layer.
Claim 11
Dependent Claim
25 words
A semiconductor laser according to claim 1 further comprising: first and second light-confining layers adjacent to and respectively provided over and under said recombination layer.
Claim 12
Dependent Claim
15 words
A semiconductor laser according to claim 1, wherein said recombination layer has a multi-quantum-well structure.
Claim 13
Dependent Claim
16 words
A semiconductor laser according to claim 1, wherein said optical waveguide layer has a multi-quantium-well structure.
Claim 14
Dependent Claim
23 words
A semiconductor laser according to claim 1, wherein said recombination layer and said optical waveguide layer are formed by GaAs and AlGaAs, respectively.
Claim 15
Dependent Claim
16 words
A semiconductor laser according to claim 1 further comprising: a power supply connected to said electrodes.
Claim 16
Dependent Claim
25 words
A semiconductor laser according to claim 1, wherein said recombination layer has a refractive index which is higher than that of said optical waveguide layer.
Claim 17
Dependent Claim
135 words
In a semiconductor laser, an operative structure comprising: a substrate; a current recombination layer formed on said substrate, said recombination layer generating light by recombining injected current; an optical waveguide layer formed on and in contact with said recombination layer across a width of said recombination layer and a layer thickness, the light generated at said recombination layer being coupled to said optical waveguide layer, and at least a part of said optical waveguide layer being removed by etching in the direction of the layer thickness, at two opposing side regions up to a central region in the direction of the width of the recombination layer, in order to form a belt-like projection; and a pair of electrodes for providing current to said recombination layer, said electrodes being mounted to respective surfaces of the laser.
Claim 18
Dependent Claim
135 words
In a semiconductor laser, an operative structure comprising: a substrate; a current recombination layer formed on said substrate, said recombination layer generating light by recombining injected current; an optical waveguide layer formed on and in contact with said recombination layer across a width of said recombination layer and a layer thickness, the light generated at said recombination layer being coupled to said optical waveguide layer, and at least a part of said optical waveguide layer being removed by etching in the direction of the layer thickness, at two opposing side regions up to a central region in the direction of the width of the recombination layer, in order to form a belt-like projection; and a pair of electrodes for providing current to said recombination layer, said electrodes being mounted to respective surfaces of the laser.
Claim 19
Dependent Claim
32 words
A semiconductor laser according to claim 16, wherein the width of said belt-like projection is set so that a far field pattern of the light which the laser emits is nearly circular.
Claim 20
Dependent Claim
29 words
A semiconductor laser according to claim 16, wherein said belt-like projection includes an apex region, and one of said electrodes electrically contacts only said apex region of said projection.
Claim 21
Dependent Claim
53 words
A semiconductor laser according to claim 16 further comprising: a first clad layer provided between said substrate and said recombination layer; and a second clad layer provided on said optical waveguide layer; said first and second clad layers having refractive indices lower than those of said recombination layer and said optical waveguide layer.
Claim 22
Dependent Claim
18 words
A semiconductor laser according to claim 19 first comprising: a cap layer provided on said second clad layer.
Claim 23
Dependent Claim
23 words
A semiconductor laser according to claim 16, wherein said recombination layer and said optical waveguide layer are formed of GaAs and AlGaAs, respectively.
Claim 24
Dependent Claim
16 words
A semiconductor laser according to claim 16 further comprising: a power supply connected to said electrodes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-22 | 1993-07-24 | 1994-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-22 | 1997-07-24 | 1998-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-22 | 2001-07-24 | 2002-01-23 | $7700.00 | Window Closed / Lapsed |